NIBBLE MODE DRAM DRAM 424

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM41C257Z-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words	SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T16		5.5 V	8.26 mm	2.96 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.575 mm	80 ns
KM41C1001BP-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.02 mm	100 ns
KM41C4001AJ-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS	95 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.68 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.145 mm	80 ns
KM41C1001CZ-7	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	70 ns
KM41C1001Z-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG		R-PZIP-T20	3				Not Qualified	1048576 bit			e0			100 ns
KM41C1001BJ-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.68 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.145 mm	100 ns
KM41C16101J-7	Samsung	NIBBLE MODE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	16777216 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.66 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	18.42 mm	70 ns
KM41C1001BP-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.02 mm	80 ns
KMM49257-12	Samsung	NIBBLE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS			675 mA	262144 words	COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	Tin/Lead (Sn/Pb)	SINGLE					16.51 mm		Not Qualified	2359296 bit			e0			120 ns
KM41C1001AP-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		65 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
KM41C1001AJ-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	DUAL		R-PDSO-J20	3				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
KMM59257-12	Samsung	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD		675 mA	262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30			16.51 mm		Not Qualified	2359296 bit						120 ns
KM41C4001BV-7	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	TSOP1	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm	6 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	14.4 mm	70 ns
MT4257MN-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	22		512		PLASTIC/EPOXY		NO		CMOS				262144 words	COMMON			4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	1048576 bit			e0			120 ns
MT4C1025-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			150 ns
MT4C1005Z-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	4194304 bit			e0	.0005 Amp		120 ns
MT4C1025-8	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			80 ns
MT9257M-20	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30			16.51 mm		Not Qualified	2359296 bit						200 ns
MT9257M-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30			16.51 mm		Not Qualified	2359296 bit						100 ns
MT9257M-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30			16.51 mm		Not Qualified	2359296 bit						120 ns
MT4C1005-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4194304 bit			e0	.0005 Amp		120 ns
MT4C1005Z-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	4194304 bit			e0	.0005 Amp		100 ns
MT4C1025C-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1048576 bit			e0			150 ns
MT4C1025Z-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0			150 ns
MT4257MN-20	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	22		512		PLASTIC/EPOXY		NO		CMOS				262144 words	COMMON			4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	1048576 bit			e0			200 ns
MT4C1025-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			120 ns
MT4C1025DJ-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0			150 ns
MT4C1005C-8	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4194304 bit			e0	.0005 Amp		80 ns
MT4C1005DJ-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	4194304 bit			e0	.0005 Amp		120 ns
MT4C1005Z-8	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	4194304 bit			e0	.0005 Amp		80 ns
MT4C1005DJ-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	4194304 bit			e0	.0005 Amp		100 ns
MT9257M-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30			16.51 mm		Not Qualified	2359296 bit						150 ns
MT4C1005C-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4194304 bit			e0	.0005 Amp		120 ns
MT4C1005C-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4194304 bit			e0	.0005 Amp		100 ns
MT4257MN-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	22		512		PLASTIC/EPOXY		NO		CMOS				262144 words	COMMON			4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	1048576 bit			e0			150 ns
MT4C1025-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			100 ns
MT4C1005-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4194304 bit			e0	.0005 Amp		100 ns
MT4C1005-8	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4194304 bit			e0	.0005 Amp		80 ns
MT4C1005DJ-8	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		60 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	4194304 bit			e0	.0005 Amp		80 ns
MT4257MN-10	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	22		512		PLASTIC/EPOXY		NO		CMOS				262144 words	COMMON			4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE							Not Qualified	1048576 bit			e0			100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.