RAMBUS DRAM MODULE DRAM 844

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Access Time
MR16R162GDF0-CN9	Samsung	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	256MX16	256M		DUAL	1	R-XDMA-N184	1	2.63 V	1066 MHz	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH			32 ns
MS18R1624AH0-CM9	Samsung	RAMBUS DRAM MODULE		160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1529 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm		3-STATE	64MX18	64M		DUAL	1	R-XDMA-N160		2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	35 ns
MR18R162GDF0-CM8	Samsung	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	256MX18	256M		DUAL	1	R-XDMA-N184	1	2.63 V	800 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH			40 ns
MR16R162GEG0-CT9	Samsung	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	256MX16	256M		DUAL	1	R-XDMA-N184	3	2.63 V	1066 MHz	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH		260	32 ns
MT4VR3216AG-750	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M		DUAL		R-PDMA-N184	1		356 MHz	Not Qualified	536870912 bit					50 ns
MT16VR12818AG-750	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX18	128M		DUAL		R-PDMA-N184	1		356 MHz	Not Qualified	2415919104 bit					50 ns
MT16VR12818AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M		DUAL	1	R-XDMA-N184				Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6416AG-850XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12818AG-653	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX18	128M		DUAL		R-PDMA-N184	1		300 MHz	Not Qualified	2415919104 bit					53 ns
MT16VR12818AG-840	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX18	128M		DUAL		R-PDMA-N184	1		400 MHz	Not Qualified	2415919104 bit					40 ns
MT16VR12816AG-750XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		128MX16	128M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
EBR51EC8ABKD-AE	Micron Technology	RAMBUS DRAM MODULE		232	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			268435456 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	256MX18	256M		DUAL		R-PDMA-N232			1066 MHz	Not Qualified	4831838208 bit					32 ns
EBR51EC8ABKD-8C	Micron Technology	RAMBUS DRAM MODULE		232	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			268435456 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	256MX18	256M		DUAL		R-PDMA-N232			800 MHz	Not Qualified	4831838208 bit					40 ns
MT4VR3216AG-850XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		32MX16	32M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH
MT4VR3218AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M		DUAL	1	R-XDMA-N184				Not Qualified	603979776 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12816AG-845XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		128MX16	128M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MT4VR3216AG-840XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		32MX16	32M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12816AG-653	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX16	128M		DUAL		R-PDMA-N184	1		300 MHz	Not Qualified	2147483648 bit
MT4VR3216AG-745	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M		DUAL		R-PDMA-N184	1		356 MHz	Not Qualified	536870912 bit					45 ns
MT6VR4818AG-850XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY				70 Cel		48MX18	48M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	905969664 bit	2.37 V	SELF CONTAINED REFRESH
MT4VR3216AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			2.5		16	MICROELECTRONIC ASSEMBLY						32MX16	32M		DUAL	1	R-XDMA-N184				Not Qualified	536870912 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT4VR3216AG-653XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		32MX16	32M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH
MT8VR6416AG-845	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	64MX16	64M		DUAL		R-PDMA-N184			400 MHz	Not Qualified	1073741824 bit					45 ns
MT8VR6416AG-745XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12818AG-845XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY				70 Cel		128MX18	128M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MT4VR3218AG-745	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX18	32M		DUAL		R-PDMA-N184	1		356 MHz	Not Qualified	603979776 bit					45 ns
MT6VR4816AG-845XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		48MX16	48M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	805306368 bit	2.37 V	SELF CONTAINED REFRESH
MT8VR6418AG-840	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	64MX18	64M		DUAL		R-PDMA-N184			400 MHz	Not Qualified	1207959552 bit					40 ns
MT4VR3218AG-745XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY				70 Cel		32MX18	32M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH
MT4VR3216AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			2.5		16	MICROELECTRONIC ASSEMBLY						32MX16	32M		DUAL	1	R-XDMA-N184				Not Qualified	536870912 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6416AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words			2.5		16	MICROELECTRONIC ASSEMBLY						64MX16	64M		DUAL	1	R-XDMA-N184				Not Qualified	1073741824 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12816AG-845	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX16	128M		DUAL		R-PDMA-N184	1		400 MHz	Not Qualified	2147483648 bit
MT4VR3218AG-750	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX18	32M		DUAL		R-PDMA-N184	1		356 MHz	Not Qualified	603979776 bit					50 ns
MT8VR6418AG-653	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	64MX18	64M		DUAL		R-PDMA-N184			300 MHz	Not Qualified	1207959552 bit					53 ns
MT16VR12816AG-840XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		128MX16	128M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MT8VR6418AG-840XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY				70 Cel		64MX18	64M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MT8VR6416AG-845XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12818AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M		DUAL	1	R-XDMA-N184				Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
EBR51EC8ABKD-AEP	Micron Technology	RAMBUS DRAM MODULE		232	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			268435456 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	256MX18	256M		DUAL		R-PDMA-N232			1066 MHz	Not Qualified	4831838208 bit					32 ns
MT16VR12818AG-845B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M		DUAL	1	R-XDMA-N184				Not Qualified	2415919104 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT8VR6416AG-750B1	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12816AG-850B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		16	MICROELECTRONIC ASSEMBLY						128MX16	128M		DUAL	1	R-XDMA-N184				Not Qualified	2147483648 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT6VR4818AG-840B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words			2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M		DUAL	1	R-XDMA-N184				Not Qualified	905969664 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT4VR3218AG-653XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY				70 Cel		32MX18	32M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12818AG-745	Micron Technology	RAMBUS DRAM MODULE		184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	128MX18	128M		DUAL		R-PDMA-N184	1		356 MHz	Not Qualified	2415919104 bit					45 ns
MT16VR12816AG-745B1	Micron Technology	RAMBUS DRAM MODULE		84		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		16	MICROELECTRONIC ASSEMBLY						128MX16	128M		DUAL	1	R-XDMA-N184				Not Qualified	2147483648 bit		IT ALSO REQUIRES 1.8V CMOS SUPPLY FOR INPUT/OUTPUT
MT16VR12818AG-745XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY				70 Cel		128MX18	128M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MT16VR12816AG-653XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		128MX16	128M	0 Cel	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.