RAMBUS DRAM MODULE DRAM 844

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
MN18R1624DF0-CM8	Samsung	RAMBUS DRAM MODULE	200			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		67108864 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					64MX18	64M	UNSPECIFIED	1	R-XXMA-X200		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
KMMR18R44C-G6-L	Samsung	RAMBUS DRAM MODULE	84			RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					16MX18	16M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	301989888 bit	2.37 V	SELF REFRESH
MD16R162GEG0-CN1	Samsung	RAMBUS DRAM MODULE	232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3940 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm	3-STATE	128MX32	128M	DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH			1.606 Amp	32 ns
MD16R162GAF0-CN9	Samsung	RAMBUS DRAM MODULE	232			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					128MX32	128M	DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
MD16R1628DF0-CM8	Samsung	RAMBUS DRAM MODULE	232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					64MX32	64M	DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MR18R082GBN1-CK7	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N184		2.63 V	711 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MR16R0828AM0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH				45 ns
MR18R1624DF0-CN9	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N184	1	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MR18R162WAG0-CM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					512MX18	512M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	9663676416 bit	2.37 V	SELF CONTAINED REFRESH
MR16R162GAF0-CM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	256MX16	256M	DUAL	1	R-XDMA-N184	1	2.63 V	800 MHz	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH				40 ns
KMMR16R86AC1-SK7	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words			2.5		16	MICROELECTRONIC ASSEMBLY					48MX16	48M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	805306368 bit	2.37 V
MR16R162GDF0-CN9	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	256MX16	256M	DUAL	1	R-XDMA-N184	1	2.63 V	1066 MHz	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
MS18R1624AH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1529 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160		2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED		35 ns
MR18R162GDF0-CM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	256MX18	256M	DUAL	1	R-XDMA-N184	1	2.63 V	800 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH				40 ns
MR16R162GEG0-CT9	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	256MX16	256M	DUAL	1	R-XDMA-N184	3	2.63 V	1066 MHz	Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH		260		32 ns
MR16R0824BM0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH				45 ns
KMMR16R86C-RM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	805306368 bit
MR16R1624AF1-CN9	Samsung	RAMBUS DRAM MODULE	184			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY					64MX16	64M	DUAL	1	R-XDMA-N184	1	2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
KMMR16R86AC1-SK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words			2.5		16	MICROELECTRONIC ASSEMBLY					48MX16	48M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	805306368 bit	2.37 V
MR18R1622AF0-CM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N184	1	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH				40 ns
KMMR18R8CAC1-RK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		100663296 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX18	96M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1811939328 bit	2.37 V	SELF CONTAINED REFRESH
KMMR18R48C1L-M8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX18	32M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	603979776 bit						40 ns
KMMR18R88C1-RM8	Samsung	RAMBUS DRAM MODULE	84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	8MX18	8M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	150994944 bit	2.37 V					40 ns
MR18R1624AF1-CN9	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1529 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N184	1	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH				32 ns
KMMR16R8GC-RK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	2147483648 bit
MR16R1628MN0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	3-STATE	128MX16	128M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
KMMR18R4GC-K8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF REFRESH				45 ns
KMMR16R8CC-RG6	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	1610612736 bit
MR18R082CAN1-CK7	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		100663296 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX18	96M	DUAL	1	R-XDMA-N184		2.63 V	711 MHz	Not Qualified	1811939328 bit	2.37 V	SELF CONTAINED REFRESH				45 ns
KMMR16R8GAC1-RK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
KMMR18R8CAC1-SG6	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		100663296 words			2.5		18	MICROELECTRONIC ASSEMBLY					96MX18	96M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1811939328 bit	2.37 V
MR18R0828AM0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH				45 ns
KMMR18R86C-RG6	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			50331648 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX18	48M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	905969664 bit
MR18R0828AN1-CG6	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N184		2.63 V	600 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH				53.3 ns
MR16R0828ET0-CM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH				40 ns
MS18R1624EH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160		2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED		32 ns
KMMR18R84AC1-SK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			2.5		18	MICROELECTRONIC ASSEMBLY					32MX18	32M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	603979776 bit	2.37 V
MR18R1628AF0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N184	1	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MR18R162GMN0-CK7	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	256MX18	256M	DUAL	1	R-XDMA-N184		2.63 V	711 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH				45 ns
KMMR16R84C1-RG6	Samsung	RAMBUS DRAM MODULE	84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	8MX16	8M	DUAL	1	R-XDMA-N184		2.63 V	600 MHz	Not Qualified	134217728 bit	2.37 V					53 ns
MN18R1628EF0-CM8	Samsung	RAMBUS DRAM MODULE	200			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		134217728 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					128MX18	128M	UNSPECIFIED	1	R-XXMA-X200		2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MR18R162GEG0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	256MX18	256M	DUAL	1	R-XDMA-N184	3	2.63 V	800 MHz	Not Qualified	4831838208 bit	2.37 V	SELF CONTAINED REFRESH				45 ns
MR16R0828ER0-CM8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH				40 ns
MR16R1628MN1-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
KMMR16R8CAC1-SK8	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		100663296 words			2.5		16	MICROELECTRONIC ASSEMBLY					96MX16	96M	DUAL	1	R-XDMA-N184		2.63 V		Not Qualified	1610612736 bit	2.37 V
MD16R1624DF0-CM8	Samsung	RAMBUS DRAM MODULE	232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					32MX32	32M	DUAL	1	R-XDMA-N232		2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MR18R1628MN1-CK7	Samsung	RAMBUS DRAM MODULE	184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N184		2.63 V	711 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MN18R1624EF0-CM8	Samsung	RAMBUS DRAM MODULE	200			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		67108864 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					64MX18	64M	UNSPECIFIED	1	R-XXMA-X200		2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.