SYNCHRONOUS DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC59SM708ASL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.4 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				11.2 mm	5.4 ns
TC59SM716ASL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.4 mm	70 Cel		8MX16	8M		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				11.2 mm	5.4 ns
TC59W6431FB-40	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		2MX32	2M		QUAD	1	R-PQFP-G100	2.7 V	1.27 mm		14 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH				20 mm	.6 ns
TC59S6404BFTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	110 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
TC59SM908AFT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59SM816CMBL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				15.72 mm	5.4 ns
TC59SM816CFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59WM707FT-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH				22.22 mm	.75 ns
TC59S1616AFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			20.95 mm	8.5 ns
TC59S1608FT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	42	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	1	R-PDSO-G42	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			18.41 mm	60 ns
TC59S1608AFT-12	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	42	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE				70 Cel		2MX8	2M	TIN LEAD	DUAL	1	R-PDSO-G42	3.6 V				Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0				9 ns
TC59SM816BFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59SM808CMBL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX8	32M		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				15.72 mm	5.4 ns
TC59SM708AS-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.4 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				11.2 mm	5.4 ns
TC59S6432CFTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	115 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
TC59S6409BFT-65	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			153 MHz		Not Qualified	67108864 bit			e0	.002 Amp	1,2,4,8		4.5 ns
TC59SM708FTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX8	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	3 V		e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
TC59SM808CMB-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX8	32M		BOTTOM	1	R-PBGA-B60	3.6 V	1.2 mm		7.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				15.72 mm	5.4 ns
TC59SM916AFT-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
UPD4565421G5-A70BL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			142.8 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		5 ns
UPD4565821G5-A70L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		145 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			143 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8,16		5.4 ns
UPD42116182-10-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50			100 MHz		Not Qualified	18874368 bit			e0	.002 Amp	4,8		8 ns
UPD45125161G5-A10L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	134217728 bit			e0		1,2,4,8,16		6 ns
UPD4565161G5-A75-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			133 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8,16		5.4 ns
UPD481850GF-A12-JBT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			83 MHz		Not Qualified	8388608 bit			e0	.006 Amp	1,2,4,8		11 ns
UPD4564163G5-A10-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		165 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8		6 ns
UPD4565161G5-A70-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		145 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			143 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8,16		5.4 ns
UPD4516421AG5-A12L-7JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		150 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44			83 MHz		Not Qualified	16777216 bit			e0	.002 Amp	1,2,4,8		8 ns
UPD45125161G5-A75-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			133 MHz		Not Qualified	134217728 bit			e0		1,2,4,8,16		5.4 ns
UPD481850GF-A15-JBT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		285 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			67 MHz		Not Qualified	8388608 bit			e0	.006 Amp			14 ns
UPD4516821G5-A10-7JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44			100 MHz		Not Qualified	16777216 bit			e0	.002 Amp	1,2,4,8		8 ns
UPD4565161G5-A15L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			67 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8,16		12 ns
HM5251325CBP-B6	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY			1.27 mm	70 Cel		16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.35 mm		14 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1			22 mm	6 ns
UPD4516161AG5-A10L-9NF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50			100 MHz		Not Qualified	16777216 bit			e0	.002 Amp	1,2,4,8		7 ns
UPD4564841G5-A12-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		95 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			83 MHz		Not Qualified	67108864 bit			e0	.002 Amp	1,2,4,8		9 ns
UPD45125821G5-A75-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX8	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			133 MHz		Not Qualified	134217728 bit			e0		1,2,4,8,16		5.4 ns
UPD45128163G5-A10-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	134217728 bit			e0	.0005 Amp	1,2,4,8		6 ns
HM5216326FP-8	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		330 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K		QUAD		R-PQFP-G100			125 MHz		Not Qualified	16777216 bit				.003 Amp	1,2,4,8		7 ns
UPD4565821G5-A80-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8,16		6 ns
UPD4565422G5-A70B-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			142.8 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		4.5 ns
UPD4565822G5-A10A-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		5.5 ns
UPD4565161G5-A10B-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		155 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		6 ns
UPD4564323G5-A80L-9JH	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		230 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G86			125 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8		6 ns
UPD4565421G5-A10A-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		6 ns
UPD4565421G5-A10AL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.001 Amp	1,2,4,8,16		6 ns
UPD4516421G5A13	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M		DUAL		R-PDSO-G44			77 MHz		Not Qualified	16777216 bit				.002 Amp	1,2,4,8		12 ns
UPD45128163G5-A80L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	134217728 bit			e0	.0005 Amp	1,2,4,8		6 ns
UPD4564841G5-A10L-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0	.0005 Amp	1,2,4,8		6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.