Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
270 mA |
33554432 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX4 |
32M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
105 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
2097152 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
9 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX9 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
66 MHz |
Not Qualified |
18874368 bit |
e0 |
.002 Amp |
4,8 |
18 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
185 mA |
4194304 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
280 mA |
33554432 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX4 |
32M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
133 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
5.4 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
185 mA |
4194304 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
145 mA |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
143 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8,16 |
5.4 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
86 |
TSSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
220 mA |
2097152 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
32 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP86,.46,20 |
DRAMs |
.5 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G86 |
143 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
67108864 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX4 |
64M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
268435456 bit |
e0 |
.001 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
200 mA |
4194304 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
142.8 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
4.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
200 mA |
4194304 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
142.8 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
270 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX16 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
142.8 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
4.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
33554432 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX4 |
32M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
134217728 bit |
e0 |
1,2,4,8,16 |
6 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
230 mA |
33554432 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX4 |
32M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
7 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
50 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
170 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G50 |
83 MHz |
Not Qualified |
16777216 bit |
e0 |
.002 Amp |
1,2,4,8 |
8 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
SYNCHRONOUS DRAM |
OTHER |
144 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
371 mA |
67108864 words |
2,4,8 |
NO |
COMMON |
1.8 |
9 |
GRID ARRAY, THIN PROFILE |
BGA144,12X18,40/32 |
1 mm |
95 Cel |
64MX9 |
64M |
0 Cel |
TIN BISMUTH |
BOTTOM |
1 |
R-PBGA-B144 |
1.9 V |
1.2 mm |
400 MHz |
11 mm |
603979776 bit |
1.7 V |
AUTO REFRESH, TERM PITCH-MAX |
e6 |
.215 Amp |
2,4,8 |
18.5 mm |
|||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
108 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
16777216 words |
YES |
3.3 |
32 |
GRID ARRAY |
1.27 mm |
70 Cel |
16MX32 |
16M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B108 |
3.6 V |
2.35 mm |
14 mm |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
e1 |
22 mm |
6 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
1024 words |
YES |
3.3 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1KX1 |
1K |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G28 |
1 |
3.465 V |
2.51 mm |
Not Qualified |
1024 bit |
3.135 V |
SELF CONTAINED REFRESH |
e3 |
30 |
260 |
17.88 mm |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
133 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8,16 |
5.4 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8,16 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
133 MHz |
Not Qualified |
134217728 bit |
e0 |
1,2,4,8,16 |
5.4 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
105 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
50 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
170 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G50 |
125 MHz |
Not Qualified |
16777216 bit |
e0 |
.002 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
230 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
7 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
4194304 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
67 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8,16 |
12 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
165 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
7 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
100 |
QFP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
210 mA |
524288 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK |
TQFP100,.7X.9,25 |
DRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
83 MHz |
Not Qualified |
16777216 bit |
e0 |
.003 Amp |
1,2,4,8 |
11 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
250 mA |
33554432 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX4 |
32M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
185 mA |
4194304 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
105 mA |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
142.8 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
4.5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
108 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
16777216 words |
YES |
3.3 |
32 |
GRID ARRAY |
1.27 mm |
70 Cel |
16MX32 |
16M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B108 |
3.6 V |
2.35 mm |
14 mm |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
e1 |
22 mm |
6 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
SYNCHRONOUS DRAM |
OTHER |
144 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
MULTI BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
409 mA |
16777216 words |
2,4,8 |
NO |
COMMON |
1.8 |
36 |
GRID ARRAY, THIN PROFILE |
BGA144,12X18,40/32 |
1 mm |
95 Cel |
16MX36 |
16M |
0 Cel |
TIN BISMUTH |
BOTTOM |
1 |
R-PBGA-B144 |
1.9 V |
1.2 mm |
400 MHz |
11 mm |
603979776 bit |
1.7 V |
AUTO REFRESH, TERM PITCH-MAX |
e6 |
.215 Amp |
2,4,8 |
18.5 mm |
||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
105 mA |
16777216 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.001 Amp |
1,2,4,8,16 |
5 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
86 |
TSSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
200 mA |
2097152 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
32 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP86,.46,20 |
DRAMs |
.5 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G86 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
50 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
18 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G50 |
66 MHz |
Not Qualified |
18874368 bit |
e0 |
.002 Amp |
4,8 |
13 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
76 MHz |
Not Qualified |
16777216 bit |
e0 |
.002 Amp |
1,2,4,8 |
12 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
250 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
86 |
TSSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
230 mA |
2097152 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
32 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP86,.46,20 |
DRAMs |
.5 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G86 |
125 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
115 mA |
8388608 words |
1,2,4,8,16 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.0005 Amp |
1,2,4,8,16 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
66 MHz |
Not Qualified |
16777216 bit |
e0 |
.002 Amp |
1,2,4,8 |
14 ns |
|||||||||||||||||||||||
Renesas Electronics |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
250 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
134217728 bit |
e0 |
.0005 Amp |
1,2,4,8 |
6 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.