SYNCHRONOUS DRAM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

UPD4565822G5-A80A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4565422G5-A80A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

105 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4565822G5-A70A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

4.5 ns

UPD4565421G5-A80-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

6 ns

UPD45256163G5-A80L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

16777216 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

6 ns

UPD45256841G5-A80-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

33554432 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

6 ns

UPD481850GF-A10-JBT

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

100

QFP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

250 mA

262144 words

1,2,4,8,FP

COMMON

3.3

3.3

32

FLATPACK

QFP100,.7X.9

DRAMs

.635 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

100 MHz

Not Qualified

8388608 bit

e0

.006 Amp

1,2,4,8

9 ns

UPD45256841G5A10BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

33554432 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

7 ns

UPD4565421G5-A80B-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

105 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5.5 ns

UPD4565161G5-A70AL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

200 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4565421G5-A15-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

67 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

12 ns

UPD42116920-10-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

2097152 words

1,2,4,8,FP

COMMON

3.3

3.3

9

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX9

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

100 MHz

Not Qualified

18874368 bit

e0

.002 Amp

4,8

8 ns

UPD4565161G5-A75L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

133 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

5.4 ns

UPD42116182-20-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G50

66 MHz

Not Qualified

18874368 bit

e0

.002 Amp

4,8

18 ns

UPD4565161G5-A70BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

200 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4565161G5-A80-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

6 ns

UPD4565162G5-A80B-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

185 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4565821G5-A70A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

HM5283206FP-10

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

100

QFP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

240 mA

262144 words

1,2,4,8,FP

COMMON

3.3

3.3

32

FLATPACK

QFP100,.7X.9

DRAMs

.635 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

QUAD

R-PQFP-G100

100 MHz

Not Qualified

8388608 bit

.003 Amp

1,2,4,8

10 ns

UPD4564163G5-A80L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

195 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8

6 ns

UPD4516421AG5-A12-7JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

83 MHz

Not Qualified

16777216 bit

e0

.002 Amp

1,2,4,8

8 ns

UPD4565421G5-A75L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

133 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

5.4 ns

UPD45256841G5-A10-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

33554432 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

6 ns

UPD48576218F1-E18-DW1-A

Renesas Electronics

SYNCHRONOUS DRAM

OTHER

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

439 mA

33554432 words

2,4,8

NO

COMMON

1.8

18

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

1 mm

95 Cel

32MX18

32M

0 Cel

TIN BISMUTH

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

533 MHz

11 mm

603979776 bit

1.7 V

AUTO REFRESH, TERM PITCH-MAX

e6

.25 Amp

2,4,8

18.5 mm

UPD4564841G5-A80L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

8388608 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8

6 ns

UPD4565421G5-A80AL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

105 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5.5 ns

UPD4564441G5-A80L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

16777216 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8

6 ns

UPD45256441G5A10BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

67108864 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

7 ns

UPD45256441G5-A80-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

67108864 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

6 ns

UPD4516421AG5-A80L-7JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

125 MHz

Not Qualified

16777216 bit

e0

.002 Amp

1,2,4,8

6 ns

UPD4565161G5-A70L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

143 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8,16

5.4 ns

9179YF-12LFT

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

1024 words

YES

3.3

1

SMALL OUTLINE

1.27 mm

70 Cel

1KX1

1K

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G28

1

3.465 V

2.51 mm

Not Qualified

1024 bit

3.135 V

SELF CONTAINED REFRESH

e3

30

260

17.88 mm

UPD4564163G5-A10BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

165 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.0005 Amp

1,2,4,8

7 ns

UPD4516421G5-A12-7JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

65 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

83 MHz

Not Qualified

16777216 bit

e0

.002 Amp

1,2,4,8

10 ns

UPD4565161G5-A80A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

185 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5.5 ns

UPD45128841G5-A80-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

270 mA

16777216 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX8

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

134217728 bit

e0

.0005 Amp

1,2,4,8

6 ns

UPD4565821G5-A70AL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4565422G5-A10A-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5.5 ns

UPD4565822G5-A10BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

105 mA

8388608 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5.5 ns

UPD45125821G5-A10-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX8

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

134217728 bit

e0

1,2,4,8,16

6 ns

UPD481850-12

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

100

QFP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

262144 words

1,2,4,8,FP

COMMON

3.3

3.3

32

FLATPACK

QFP100,.7X.9

DRAMs

.635 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

84 MHz

Not Qualified

8388608 bit

e0

4,8

11 ns

UPD45256841G5-A10L-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

33554432 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

268435456 bit

e0

.001 Amp

1,2,4,8

6 ns

UPD4516821G5-A15-7JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

65 mA

2097152 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

66 MHz

Not Qualified

16777216 bit

e0

.002 Amp

1,2,4,8

14 ns

UPD48576236F1-E18-DW1-A

Renesas Electronics

SYNCHRONOUS DRAM

OTHER

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

488 mA

16777216 words

2,4,8

NO

COMMON

1.8

36

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

1 mm

95 Cel

16MX36

16M

0 Cel

TIN BISMUTH

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

533 MHz

11 mm

603979776 bit

1.7 V

AUTO REFRESH, TERM PITCH-MAX

e6

.25 Amp

2,4,8

18.5 mm

UPD4565422G5-A80BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

105 mA

16777216 words

1,2,4,8,16

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

5 ns

UPD4516161AG5-A80L-9NF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

170 mA

1048576 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G50

125 MHz

Not Qualified

16777216 bit

e0

.002 Amp

1,2,4,8

6 ns

UPD4565162G5-A70BL-9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

200 mA

4194304 words

1,2,4,8,16

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

142.8 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8,16

4.5 ns

UPD45128163G5-A10BL9JF

Renesas Electronics

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

230 mA

8388608 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

134217728 bit

e0

.0005 Amp

1,2,4,8

7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.