VIDEO DRAM DRAM 823

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

KM4132G512AQ-5/F5

Samsung

VIDEO DRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

524288 words

3.3

32

FLATPACK

.65 mm

70 Cel

512KX32

512K

0 Cel

QUAD

1

R-PQFP-G100

3.6 V

3 mm

14 mm

Not Qualified

16777216 bit

3.135 V

20 mm

4.5 ns

KM4216C256-7

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

2.4 mm

11.8 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN; 512 X 16 SAM PORT

26.3 mm

70 ns

KM4216C258T-6

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

60 ns

KM4216V258RF-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM428V256J-8

Samsung

VIDEO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

262144 words

3.3

3.3

8

SMALL OUTLINE

SOJ40,.44

Other Memory ICs

1.27 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-J40

3.6 V

3.76 mm

10.16 mm

Not Qualified

2097152 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.005 Amp

26.035 mm

80 ns

KM4216V258GL-6

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

26.03 mm

60 ns

KM428C256TR-6

Samsung

VIDEO DRAM

COMMERCIAL

40

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

185 mA

262144 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

Other Memory ICs

.8 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-G40

5.5 V

1.2 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.01 Amp

18.41 mm

60 ns

KM4216V256G-60

Samsung

VIDEO DRAM

64

SSOP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

256KX16

256K

DUAL

2

R-PDSO-G64

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

3 V

26.03 mm

60 ns

KM4216C256RF-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM428C257J-6

Samsung

VIDEO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

185 mA

262144 words

5

5

8

SMALL OUTLINE

SOJ40,.44

Other Memory ICs

1.27 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.01 Amp

26.035 mm

60 ns

KM4216C257RL-6

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

60 ns

KM4216C255GL-7

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

26.03 mm

70 ns

KM4216C258TF-6

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

60 ns

KM428C256Z-10

Samsung

VIDEO DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

140 mA

262144 words

5

5

8

IN-LINE

ZIP40,.1

Other Memory ICs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

TIN LEAD

ZIG-ZAG

2

R-PZIP-T40

5.5 V

12.07 mm

2.96 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT

e0

.01 Amp

100 ns

KM4216C255R-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM4216C255GL-6

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

26.03 mm

60 ns

KM4132G112TQ-6/F6

Samsung

VIDEO DRAM

COMMERCIAL

100

TQFP

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

1048576 words

YES

3.3

32

FLATPACK, THIN PROFILE

.65 mm

70 Cel

1MX32

1M

0 Cel

QUAD

1

R-PQFP-G100

3.6 V

1.2 mm

14 mm

Not Qualified

33554432 bit

3.135 V

AUTO/SELF REFRESH

20 mm

5.5 ns

KM4216C256TF-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM4216C255RL-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM4216C257G-7

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

26.03 mm

70 ns

KM4216C255GF-7

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

26.03 mm

70 ns

KM4132G512AQ-F8

Samsung

VIDEO DRAM

COMMERCIAL

100

QFP

2048

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

200 mA

524288 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

32

FLATPACK

QFP100,.7X.9

DRAMs

.65 mm

70 Cel

3-STATE

512KX32

512K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

3 mm

125 MHz

14 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

4,8

20 mm

6 ns

KM4216V256TL-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM4216C255T-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM428C256T-7

Samsung

VIDEO DRAM

COMMERCIAL

40

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

165 mA

262144 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

Other Memory ICs

.8 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-G40

5.5 V

1.2 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.01 Amp

18.41 mm

70 ns

KM4216C256RL-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM4216V257GL-7

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

26.03 mm

70 ns

KM4216C257GF-8

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

26.03 mm

80 ns

KM4132G512AQ-8

Samsung

VIDEO DRAM

COMMERCIAL

100

QFP

2048

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

200 mA

524288 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

32

FLATPACK

QFP100,.7X.9

DRAMs

.65 mm

70 Cel

3-STATE

512KX32

512K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

3 mm

125 MHz

14 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

4,8

20 mm

6 ns

KM4216C255RF-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM4216C256TL-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM4216V256RL-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM4216C256TL-6

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

60 ns

KM428C256TR-8

Samsung

VIDEO DRAM

COMMERCIAL

40

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

145 mA

262144 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

Other Memory ICs

.8 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-G40

5.5 V

1.2 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.01 Amp

18.41 mm

80 ns

KM4216V255GF-8

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

3.3

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

26.03 mm

80 ns

KM428V256J-7

Samsung

VIDEO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

100 mA

262144 words

3.3

3.3

8

SMALL OUTLINE

SOJ40,.44

Other Memory ICs

1.27 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-J40

3.6 V

3.76 mm

10.16 mm

Not Qualified

2097152 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.005 Amp

26.035 mm

70 ns

KM4232W259A-6000

Samsung

VIDEO DRAM

COMMERCIAL

120

FQFP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

SYNCHRONOUS

262144 words

5

32

FLATPACK, FINE PITCH

.5 mm

70 Cel

256KX32

256K

0 Cel

QUAD

2

R-PQFP-G120

5.5 V

2.3 mm

14 mm

8388608 bit

4.5 V

RAS ONLY/CAS BEFORE RAS REFRESH

20 mm

60 ns

KM4216V257RF-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM4216V255G-80

Samsung

VIDEO DRAM

64

SSOP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

256KX16

256K

DUAL

2

R-PDSO-G64

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

3 V

26.03 mm

80 ns

KM4216V257RL-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM4216C258TL-8

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

80 ns

KM4216C256G-70

Samsung

VIDEO DRAM

64

SSOP

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

256KX16

256K

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

26.03 mm

70 ns

KM428C257J-7

Samsung

VIDEO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

165 mA

262144 words

5

5

8

SMALL OUTLINE

SOJ40,.44

Other Memory ICs

1.27 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.01 Amp

26.035 mm

70 ns

KM428C258J-6

Samsung

VIDEO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

185 mA

262144 words

5

5

8

SMALL OUTLINE

SOJ40,.44

Other Memory ICs

1.27 mm

70 Cel

256KX8

256K

0 Cel

TIN LEAD

DUAL

2

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

.01 Amp

26.035 mm

60 ns

KM4132G271AQ-8

Samsung

VIDEO DRAM

100

QFP

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

32

FLATPACK

.65 mm

256KX32

256K

QUAD

1

R-PQFP-G100

3.6 V

2.45 mm

14 mm

Not Qualified

8388608 bit

3 V

20 mm

80 ns

KM4216C256RF-7

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

23.49 mm

70 ns

KM4216V257T-6

Samsung

VIDEO DRAM

COMMERCIAL

64

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT

23.49 mm

60 ns

KM4216C258GF-8

Samsung

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

YES

5

16

SMALL OUTLINE, SHRINK PITCH

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT

26.03 mm

80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.