VIDEO DRAM DRAM 823

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT43C4257DJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	205 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	26.06 mm	80 ns
MT42C8127DJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	131072 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.01 Amp	26.06 mm	100 ns
MT42C8257DJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	195 mA	262144 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	26.06 mm	80 ns
MT42C8128DJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	131072 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.008 Amp	26.06 mm	100 ns
MT42LC256K32A1LG-20	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	180 mA	262144 words	3.3	3.3	32	FLATPACK	QFP120(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0	.008 Amp		60 ns
MT42C4256Z-15	Micron Technology	VIDEO DRAM	COMMERCIAL	28	ZIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			262144 words	5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel		256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	1048576 bit			e0	.001 Amp		150 ns
MT42LC256K32A1LG-25	Micron Technology	VIDEO DRAM	COMMERCIAL	120	QFP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	160 mA	262144 words	3.3	3.3	32	FLATPACK	QFP120(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	R-PQFP-G120	3.6 V			Not Qualified	8388608 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH; BYTE ACCESS; 128 X 16 SAM	e0	.008 Amp		70 ns
MT42C4256DJ-10LTR	Micron Technology	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J28	5.5 V	3.66 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	e0		18.44 mm	100 ns
MT42C4255Z-8S	Micron Technology	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28	5.25 V	10.16 mm	2.795 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT			35.455 mm	80 ns
MT42C4256-12	Micron Technology	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			262144 words	5	5	4	IN-LINE	DIP28(UNSPEC)	Other Memory ICs		70 Cel		256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT42C8255TG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	170 mA	262144 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0	.01 Amp	18.41 mm	80 ns
MT42C8128TG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	150 mA	131072 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.008 Amp	18.41 mm	70 ns
MT42C256K16A1SG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	210 mA	262144 words	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	2.38 mm	12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	26.29 mm	70 ns
MT42C8255TG-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	185 mA	262144 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0	.01 Amp	18.41 mm	70 ns
MT43C256K8A1SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64		2.38 mm	12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.29 mm	70 ns
MT43C256K8A1SG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G64		2.38 mm	12 mm	Not Qualified	2097152 bit		RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.29 mm	80 ns
MT43C4258ADJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	185 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0	.002 Amp	26.06 mm	70 ns
MT42C256K16C1SG-6	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64	5.5 V	2.38 mm	12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			26.29 mm	60 ns
MT43C8129EJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	80 ns
MT42C8128TG-10LTR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0		18.41 mm	100 ns
MT42C8256RG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0		18.41 mm	80 ns
MT42C4256Z-7	Micron Technology	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	160 mA	262144 words	5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.008 Amp	36 mm	70 ns
MT42C8128DJ-10L	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	131072 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.0005 Amp	26.06 mm	100 ns
MT43C8129AEJ-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	60 ns
MT43C4258ADJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	150 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0	.002 Amp	26.06 mm	80 ns
MT43C4258ATG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0		18.41 mm	80 ns
MT43C8128AEJ-6TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	60 ns
MT43C8129AEJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	165 mA	131072 words	5	5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0	.002 Amp	19.1262 mm	80 ns
MT42C4256C8/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	150 mA	262144 words	5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		8 ns
MT42C8128DJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0		26.06 mm	100 ns
MT42C256K16C1SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64	5.5 V	2.38 mm	12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			26.29 mm	70 ns
MT42C256K16A1SG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	2.38 mm	12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.29 mm	70 ns
MT43C4258ATG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0		18.41 mm	70 ns
MT43C8128EJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	100 ns
MT43C4258DJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	185 mA	262144 words	5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	26.06 mm	100 ns
MT42C8255DJ-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.06 mm	70 ns
MT43C4258TG-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT43C4257DJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	100 ns
MT42C8254DJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel		256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.06 mm	80 ns
MT42C8128TG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	130 mA	131072 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.008 Amp	18.41 mm	80 ns
MT42C8254DJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	170 mA	262144 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	26.06 mm	80 ns
MT42C8254DJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	185 mA	262144 words	5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.01 Amp	26.06 mm	70 ns
MT42C8255RG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 8 SAM PORT	e0		18.41 mm	70 ns
MT42C4256-15	Micron Technology	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			262144 words	5	5	4	IN-LINE	DIP28(UNSPEC)	Other Memory ICs		70 Cel		256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	1048576 bit			e0	.001 Amp		150 ns
MT43C8129EJ-10TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.1262 mm	100 ns
MT43C4257TG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	205 mA	262144 words	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G40	5.25 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	18.41 mm	80 ns
MT43C8129AEJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	512	SQUARE	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words	5		8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	3	S-PQCC-J52	5.25 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 256 X 8 SAM	e0		19.1262 mm	80 ns
MT43C4258DJ-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40	5.25 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.