144 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M466F0404DT2-L60	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH				.0008 Amp			60 ns
K4C89363AF-GIF60	Samsung	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY						8MX36	8M		TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V				Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0						.5 ns
KMM466S823AT2-F8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			29.21 mm	125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns
M466S0823CT3-L100	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			26.67 mm	100 MHz		Not Qualified	536870912 bit						.008 Amp			7 ns
KMM466S803AT2-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			29.21 mm	100 MHz		Not Qualified	536870912 bit						.016 Amp			7 ns
M464S6453HV0-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1650 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	3	3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH			260	.032 Amp			5.4 ns
M965G0125AP0-C50	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		200 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			4.5 ns
M463S3254DK1-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp			6 ns
M464S6453DN0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.032 Amp			6 ns
M463S0924DT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V	29.9974 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
M466S0823BT2-L100	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	TIN SILVER COPPER	DUAL		R-PDMA-N144	3		29.21 mm	100 MHz		Not Qualified	536870912 bit			e1			.008 Amp			7 ns
M464S6453EN0-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1000 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.032 Amp			5.4 ns
M463S0924ET1-L7C	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							5.4 ns
KMM466S823BT3-FL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1200 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			29.21 mm	100 MHz		Not Qualified	536870912 bit						.008 Amp			6 ns
K4D26323QV-VC250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm		12 mm	Not Qualified	134217728 bit	1.9 V	AUTO/SELF REFRESH						12 mm	.45 ns
M464S6453DKS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp			6 ns
K4C89363AF-GCFB0	Samsung	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm		10.5 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.5 ns
M966G5115AQ0-C70	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		524288 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		512KX64	512K	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH							5.5 ns
K4J55323QF-VC140	Samsung	GDDR3 DRAM	OTHER	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	2.1 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					12 mm
KMM466S824BT2-FL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
K4J55323QF-GC15	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1055 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		S-PBGA-B144				667 MHz		Not Qualified	268435456 bit						.14 Amp	4		.26 ns
M464S3254CTS-CIL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH							6 ns
M464S1654CTS-C7C	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
M966G0225MP0-C80	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		125 MHz		Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
K4J55323QF-GC120	Samsung	GDDR3 DRAM	OTHER	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.9		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.8 V	AUTO/SELF REFRESH	e0					12 mm
KMM965G112APN-G5	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V		200 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			4.5 ns
K4D553235F-GC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	314 mA	8388608 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	300 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4,8	12 mm	.55 ns
KMM966G112PN-GH	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH							6 ns
M464S3323BN0-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
M464S6554MTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1460 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.04 Amp			6 ns
M965G0225MQ0-C60	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		166 MHz		Not Qualified	134217728 bit	3.135 V	AUTO/SELF REFRESH				.008 Amp			5.5 ns
KMM466S823AT-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			31.75 mm	100 MHz		Not Qualified	536870912 bit						.016 Amp			7 ns
KMM966G512BQN-G7	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	670 mA	524288 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K	0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V		143 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
K4D263238E-VC45	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	655 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	222 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH			260	.07 Amp	2,4,8	12 mm	.7 ns
K4D263238E-VC220	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.94 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.66 V	AUTO/SELF REFRESH	e1					12 mm	.55 ns
K4D26323QG-GC25	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		490 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				400 MHz		Not Qualified	134217728 bit			e0			.053 Amp	2,4,8		.45 ns
K4D26323QG-GC2AT	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		440 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM		S-PBGA-B144				350 MHz		Not Qualified	134217728 bit						.01 Amp	2,4,8		.55 ns
M464S0824DT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
M464S3323BN0-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
M464S3254CTS-L1L	Samsung	DDR DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	1	3.6 V	31.9 mm	100 MHz	3.8 mm	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH; WD-MAX				.016 Amp		67.56 mm	6 ns
M464S0924DTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
M464S3323BN-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
M965G0115MP0-C60	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	520 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		166 MHz		Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH				.004 Amp			5.5 ns
K4D26323QG-VC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	4194304 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	1.9 V	1.4 mm	300 MHz	12 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8	12 mm	.55 ns
M466S0824BT2-L100	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			29.21 mm	100 MHz		Not Qualified	536870912 bit						.008 Amp			7 ns
KMM466S924BT-G0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							7 ns
KMM466F104AT1-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		440 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N144						Not Qualified	67108864 bit						.0008 Amp			60 ns
KMM466S1724T-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.