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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Access Time
MS18R3266AH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		201326592 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	192MX18	192M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	3623878656 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS18R1622EH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS18R1622DH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1624EH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1622DH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	35 ns
MS18R1622AH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1099 mA	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	35 ns
MS18R1628DH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1628DH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1624AH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns
MS18R1624DH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns
MS16R1628AF0-CK8	Samsung	RAMBUS DRAM MODULE	160		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY					128MX16	128M	DUAL	1	R-XDMA-N160	2.63 V		Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MS18R1628AH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1628EH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1628EH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1628EH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1622DH0-CN9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS18R1628AH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2389 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	35 ns
MS18R1622AH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns
MS18R1624DH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	35 ns
MS18R1624EH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns
MS18R1624AH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1529 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	35 ns
MS18R1624EH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS18R1624DH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS16R1622AF0-CK8	Samsung	RAMBUS DRAM MODULE	160		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY					32MX16	32M	DUAL	1	R-XDMA-N160	2.63 V		Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH
MS18R3266AH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		201326592 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	192MX18	192M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	3623878656 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1622EH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns
MS18R1624DH0-CN9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS18R1628AH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns
MS16R1624AF0-CK8	Samsung	RAMBUS DRAM MODULE	160		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		16	MICROELECTRONIC ASSEMBLY					64MX16	64M	DUAL	1	R-XDMA-N160	2.63 V		Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MS18R1624MN0-CK8	Samsung	RAMBUS DRAM MODULE	160		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH
MS18R1624DH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1622EH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1622AH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1628DH0-CN9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1628DH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1622DH0-CT9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	32 ns
MS18R1628MN0-CK8	Samsung	RAMBUS DRAM MODULE	160		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		18	MICROELECTRONIC ASSEMBLY					128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V		Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH
MS18R1628DH0-CM9	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	128MX18	128M	DUAL	1	R-XDMA-N160	2.63 V	1066 MHz	Not Qualified	2415919104 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED
MS18R1624AH0-CM8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	64MX18	64M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	40 ns
MS18R1622DH0-CK8	Samsung	RAMBUS DRAM MODULE	160	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM160,25	DRAMs	.635 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N160	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	NOT SPECIFIED	NOT SPECIFIED	45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.