200 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT9HTF6472RHY-53EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4
MT16HTF6464HY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					.45 ns
MT36LSDT3272JG-10C	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4410 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N200				125 MHz		Not Qualified	2415919104 bit						.072 Amp		6 ns
MT5VDDT3272HY-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e4					.9 ns
MT16HTF12864HIZ-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT16VDDS6464HG-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4294967296 bit								.75 ns
MT9VDDT12872HG-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				125 MHz		Not Qualified	9663676416 bit								.8 ns
MT16HTS25664HY-800A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2776 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			400 MHz		Not Qualified	17179869184 bit			e3			.112 Amp
MT9HTF12872RHZ-80EH1	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1890 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	9663676416 bit				30	260	.063 Amp		.4 ns
MT9VDDT1672HY-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e4					.8 ns
MT4VDDT1664HG-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		30	235			.7 ns
MT8VDDT3264HDY-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH	e4					.7 ns
MT18VDDS12872HG-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit								.75 ns
MT8VDDT6464HY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT9VDDT6472PHG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235			.8 ns
MT9HTF12872RHIY-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT8VDDT6464HDG-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				166 MHz		Not Qualified	4294967296 bit								.75 ns
MT4HTF6464HY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4294967296 bit						.028 Amp		.45 ns
MT8VDDT6464HDG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
MT9VDDT1672HI-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		16MX72	16M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		30	235			.8 ns
MT4HTF1664HY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm	.5 ns
MT9VDDT12872HIY-265	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit								.75 ns
MT18VDDT12872PHG-26AA1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3195 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit								.75 ns
MT9HTF6472RHY-667D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	4831838208 bit						.063 Amp		.45 ns
MT5VDDT872HY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	603979776 bit								.75 ns
MT18VDDF12872HY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT9VDDT6472HI-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT9VDDT12872HY-40B	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	9663676416 bit								.7 ns
MT8VDDT6464HDG-40B	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2760 mA	67108864 words		COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp		.7 ns
MT18VDDS12872HIG-265	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit								.75 ns
MT9VDDT3272PH-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT16HTF25664HZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3440 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	17179869184 bit				30	260	.112 Amp
MT9VDDT12872HIG-335XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235			.7 ns
MT9VDDT6472PHIG-265	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3150 mA	67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit						.045 Amp		.75 ns
MT18VDDF12872HG-40BA1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.6		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH	e0					.7 ns
MT4VDDT864HG-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1540 mA	8388608 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N200				166 MHz		Not Qualified	536870912 bit								.7 ns
MT9VDDT1672HIG-262	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2970 mA	16777216 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1207959552 bit								.75 ns
MT18VDDF12872HY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5220 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				143 MHz		Not Qualified	9663676416 bit						.09 Amp		.75 ns
MT9VDDT3272HY-265A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT9VDDT6472PHY-26A	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3150 mA	67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit						.045 Amp		.75 ns
MT16HTF25664HIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	TIN SILVER COPPER	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm			Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e1				67.6 mm
MT8VDDT6464HDG-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH	e0					.7 ns
MT4VDDT1664HG-262F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	16777216 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1073741824 bit								.75 ns
MT9HTF12872RHZ-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT9VDDT3272HG-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.6		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V	3.8 mm		35.56 mm	Not Qualified	2415919104 bit	2.5 V	AUTO/SELF REFRESH		30	235		67.585 mm	.7 ns
MT18HTS51272CHY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4				67.75 mm
MT4HTF6464HZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words			1.8		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		2.45 mm	Not Qualified	4294967296 bit	1.7 V	WD-MAX	e4				67.6 mm
MT18VDDT6472PHY-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4230 mA	67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit								.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.