200 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53D512M32D2DS-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1		1.95 V	.8 mm	1869.1 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D1ZW-046WT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY					16,32	14.5 mm
MT53E128M32D2DS-053AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E512M32D1ZW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2133 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-053AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.8 mm	1869.1 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E1G32D2FW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D1ZW-046IT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY					16,32	14.5 mm
MT53E512M32D1ZW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2133 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4DT-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1		1.95 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E1G32D2FW-046IT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		1GX32	1G		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY	e1	30	260		16,32	14.5 mm
MT53E256M32D2DS-046AIT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT53D1024M32D4DT-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53D512M32D2DS-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
K4F6E3S4HM-MGCJ	Samsung Electro-mechanics	LPDDR4 DRAM	OTHER	200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		536870912 words				1.1		32	GRID ARRAY				85 Cel		512MX32	512M		-25 Cel		BOTTOM		R-PBGA-B200						17179869184 bit
MT53E512M32D1ZW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.05 mm	2133 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4DT-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
NT6AN512T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words				1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		512MX32	512M		-30 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1 mm		10 mm		17179869184 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX						15 mm
MT53E256M32D2DS-046IT:B	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.032 mm	2133 MHz	10 mm		8589934592 bit	1.06 V							14.5 mm
MT53E256M32D2DS-053AUT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2DS-053AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E256M32D2DS-046AUT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT53D512M32D2DS-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E1G32D2FW-046WT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	TERMINAL_PITCH_MAX; SELF REFRESH; ALSO OPERATES WITH 1.8V NOMINAL SUPPLY					16,32	14.5 mm
MT53E1G32D2FW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1		1.95 V	.8 mm	2136.7 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E1G32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2133 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E256M32D2DS-053AIT:B	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1866 MHz	10 mm		8589934592 bit	1.06 V		e1	30	260		16,32	14.5 mm
MT53D512M16D1DS-046AIT:D	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AAT:D	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	1.1 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4DT-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1		1.95 V	.95 mm	1869.1 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
AS4C256M32MD4-062BAN	Alliance Memory	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL			268435456 words						32					105 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200						8589934592 bit
MT8HTF12864HDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1430 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp		67.6 mm	.4 ns
MT53E128M32D2DS-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	105 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E128M32D2DS-046WT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel		128MX32	128M		-25 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
W66CP2NQUAFJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm		4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
W66CP2NQUAGJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1869.1 MHz	10 mm		4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
W66CP2NQUAHJ	Winbond Electronics	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm		4294967296 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
AS4C128M16MD4-062BAN	Alliance Memory	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm		2147483648 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX					16,32	14.5 mm
MT53E256M32D2DS-046AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E128M32D2DS-046AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		128MX32	128M	1.06 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			14.5 mm
MT53D512M16D1DS-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2136.7 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2DS-046AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200	1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.85 mm	1600 MHz	10 mm		2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
MT53B256M32D1DS-062AAT:C	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT53E256M32D1KS-046AAT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	42.3 mA	268435456 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2133 MHz	10 mm		8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0009 Amp	16,32	14.5 mm
MT53D1024M32D4DT-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel		1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.