200 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MC-4516DA72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2100 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				83 MHz		Not Qualified	1207959552 bit					.036 Amp		9.5 ns
MC-4516DA72F-A10B	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2370 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	1207959552 bit					.019 Amp		7.5 ns
MC-454BA80F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2700 mA	4194304 words		COMMON	3.3	3.3	80	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	4MX80	4M	DUAL		R-PDMA-N200						Not Qualified	335544320 bit					.04 Amp		8.5 ns
MC-4516DC72F-A10B	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1560 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	1207959552 bit					.019 Amp		7.5 ns
MC-4516DC72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1425 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				83 MHz		Not Qualified	1207959552 bit					.036 Amp		9.5 ns
MC-454BC72F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1722 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL		R-PDMA-N200			38.1 mm	100 MHz		Not Qualified	301989888 bit					.036 Amp		8.5 ns
MC-454BA80F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2300 mA	4194304 words		COMMON	3.3	3.3	80	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	4MX80	4M	DUAL		R-PDMA-N200						Not Qualified	335544320 bit					.04 Amp		9.5 ns
MC-458DA72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1200 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL		R-PDMA-N200				83 MHz		Not Qualified	603979776 bit					.018 Amp		9.5 ns
MC-4516DC72F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1515 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	1207959552 bit					.036 Amp		8.5 ns
MC-458DA72F-A10B	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1335 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	603979776 bit					.015 Amp		7.5 ns
MC-452BA72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1290 mA	2097152 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M	DUAL		R-PDMA-N200			38.1 mm	83.3 MHz		Not Qualified	150994944 bit					.018 Amp		9.5 ns
MC-4516DA72F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2730 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	1207959552 bit					.019 Amp		6.5 ns
MC-4516DA72F-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2730 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	1207959552 bit					.019 Amp		6.5 ns
MC-454BA72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2100 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL		R-PDMA-N200			38.1 mm	83 MHz		Not Qualified	301989888 bit					.036 Amp		9.5 ns
MC-454BA72F-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2460 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL		R-PDMA-N200			38.1 mm	100 MHz		Not Qualified	301989888 bit					.036 Amp		8.5 ns
MC-454BC72F-A12	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1542 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	DUAL		R-PDMA-N200			38.1 mm	83 MHz		Not Qualified	301989888 bit					.036 Amp		9.5 ns
M470T5663CZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2600 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	ZIG-ZAG	1	R-XZMA-N200	3	1.9 V		333 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH		260	.24 Amp		.45 ns
M470L2923F60-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	134217728 words	YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX8	128M	ZIG-ZAG	1	R-XZMA-N200	3	2.7 V	31.75 mm	166 MHz	3.8 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX		260	.08 Amp	67.6 mm	.7 ns
M470T6554BZ0-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1060 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			.064 Amp		.6 ns
M470T6464DZ3-LE6	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1020 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	DUAL	1	R-XDMA-N200		1.9 V		333 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.032 Amp		.45 ns
M470L3224DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1620 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	DUAL	1	R-XDMA-N200	1	2.7 V		166 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH			.024 Amp		.7 ns
M378S1620BT0-C1H0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2700 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL		R-PDMA-N200				100 MHz		Not Qualified	1207959552 bit					.02 Amp		6 ns
M470T6554BG3-CCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	ZIG-ZAG	1	R-XZMA-N200		1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.064 Amp		.6 ns
KMM378S1723T-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N200		3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH			.009 Amp		6 ns
M470L1714ET0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			.024 Amp		.75 ns
M470L6524DU0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.04 Amp		.75 ns
M470L0914DT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			.01 Amp		.75 ns
M485L1624FU0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED			.7 ns
M470T2863EH3-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	792 mA	134217728 words	YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX8	128M	ZIG-ZAG	1	R-XZMA-N200	3	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		260		67.6 mm	.4 ns
M470L1714BT0-LA2	Samsung	DDR1 DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			.34 Amp		.75 ns
M470L3223DT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	DUAL	1	R-XDMA-N200	1	2.7 V		100 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH					.8 ns
M485L0914DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1500 mA	8388608 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	603979776 bit	2.3 V	AUTO/SELF REFRESH			.0125 Amp		.75 ns
M470L3224FT0-LCC	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	33554432 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	DUAL	1	R-XDMA-N200		2.7 V		200 MHz		Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH			.032 Amp		.65 ns
M470T6464AZ3-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH			.032 Amp		.6 ns
M470T2864DZ3-LE6	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	DUAL	1	R-XDMA-N200		1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.064 Amp		.45 ns
M485L6523MT0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	DUAL	1	R-XDMA-N200	1	2.7 V		100 MHz		Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH					.8 ns
M470L1624FT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
KMM378S1723T-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	DUAL	1	R-XDMA-N200		3.6 V		125 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH			.009 Amp		6 ns
M470T6464DZ3-CE7	Samsung	SYNCHRONOUS DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	67108864 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	64MX64	64M	DUAL	1	R-XDMA-N200		1.9 V		400 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.06 Amp		.4 ns
M470T2953CZ0-LE6	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1720 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	ZIG-ZAG	1	R-XZMA-N200		1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.08 Amp		.45 ns
M470L1624FU0-LA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH					.75 ns
M470T2864EH3-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	792 mA	67108864 words	YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX16	64M	ZIG-ZAG	1	R-XZMA-N200	3	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		260	.04 Amp	67.6 mm	.4 ns
M470L6524CU0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.04 Amp		.75 ns
M485L6523CU0-LCC	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3470 mA	67108864 words	YES	COMMON	2.6	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	DUAL	1	R-XDMA-N200		2.7 V		200 MHz		Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.05 Amp		.65 ns
KMM378S3320T-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	2	R-XDMA-N200		3.6 V		125 MHz		Not Qualified	2415919104 bit	3 V				.018 Amp		6 ns
M485L0914DT0-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1500 mA	8388608 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	603979776 bit	2.3 V	AUTO/SELF REFRESH			.0125 Amp		.75 ns
M470L1624FT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1400 mA	16777216 words	YES	COMMON	2.5	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-N200		2.7 V		166 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH					.7 ns
M485L3324BU0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED			.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.