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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53E128M32D2FW-046AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT8HTF12864HZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words				1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO REFRESH	e4					67.6 mm
MT8HTF3264HDY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M		0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30.5 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm	.6 ns
MT8HTF12864HG-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		30	235				.5 ns
MT8HTF12864HDY-667E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2160 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL		R-PDMA-N200				333 MHz		Not Qualified	8589934592 bit						.056 Amp			.45 ns
MT53D512M32D2NQ-046WT:B	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32					85 Cel		512MX32	512M		-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53E384M32D2DS-053AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel	3-STATE	384MX32	384M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2NP-046AWT:C	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32					85 Cel		512MX32	512M		-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2DS-062WT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1			1.95 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT8HTF12864HDG-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		30	235				.5 ns
MT8HTF25664HIZ-1GAXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words				1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M		-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO REFRESH	e4					67.6 mm
MT8HTF3264HY-53EA3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1920 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M		0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			267 MHz		Not Qualified	2147483648 bit			e3			.04 Amp			.5 ns
MT53D512M32D2NQ-046WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32					85 Cel		512MX32	512M		-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT8HTF3264HY-40EXX	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT8HSF12864HDY-40EXX	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M		0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1
MT8HTF6464HY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT53D1024M32D4NQ-046WT:C	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT8HTF6464HY-80EA3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2400 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			400 MHz		Not Qualified	4294967296 bit			e3			.056 Amp			.4 ns
MT53E384M32D2DS-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	384MX32	384M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm		12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2NQ-053AWT:C	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32					85 Cel		512MX32	512M		-25 Cel		BOTTOM	1			1.95 V	.95 mm	1869.1 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT8HTF3264HY-53E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1920 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	32MX64	32M		0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	2147483648 bit					260	.04 Amp			.5 ns
MT53D1024M32D4DS-053AWT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.8 mm	1869.1 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT8HSF6464HDY-53EXX	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M		0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1
MT53E128M32D2FW-053AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	1866 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53B256M32D1NP-062AUT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	445 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.005 Amp	16,32	14.5 mm
MT8HTF3264HY-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1840 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	32MX64	32M		0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	2147483648 bit					260	.04 Amp			.6 ns
MT8HTF12864HIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words				1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M		-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO REFRESH	e4					67.6 mm
MT53E256M16D1DS-053AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		4294967296 bit	1.06 V						16,32	14.5 mm
MT53D1024M32D4NP-062WT:B	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.8 mm	1600 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT8HTF12864HDY-53EA3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2000 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	128MX64	128M		0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	8589934592 bit						.04 Amp			.5 ns
MT53D1024M32D4NP-046WT:B	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT8HTF3264HDY-53E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1360 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	32MX64	32M		0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	2147483648 bit						.04 Amp			.5 ns
MT8HTF6464HY-40EC2	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT8HTF3264HTY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M		-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30.5 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT8HTF6464HY-40EA3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1760 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			200 MHz		Not Qualified	4294967296 bit			e3			.056 Amp			.6 ns
MT8HTF6464HDY-40EC2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		64MX64	64M		0 Cel	GOLD	ZIG-ZAG	1	R-PZMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT8HTF3264HDY-40EB3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1320 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M		0 Cel	GOLD	DUAL		R-PDMA-N200				200 MHz		Not Qualified	2147483648 bit			e4			.04 Amp			.6 ns
MT8HTF12864HDY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30.5 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm	.5 ns
MT8HTF3264HDG-53E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1360 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	32MX64	32M		0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	2147483648 bit						.04 Amp			.5 ns
MT8HTF12864HDZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4					67.6 mm
MT8HTF6464HY-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1840 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	64MX64	64M		0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit					260	.04 Amp			.6 ns
MT53D1024M32D4NQ-046AWT:B	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4NP-053AWT:C	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.8 mm	1869.1 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4NQ-062AWT:C	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G		-25 Cel		BOTTOM	1			1.95 V	.95 mm	1600 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53B512M32D2DS-062AAT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT8HTF12864HDZ-800G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1790 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	Gold (Au)	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp		67.6 mm	.4 ns
MT8HTF12864HTZ-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M		-40 Cel		DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH
MT53D512M32D2DT-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		512MX32	512M		-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm		17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.