200 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT5VDDT3272HG-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.9 ns
MT4HTF6464HY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT9VDDT6472HG-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	3.8 mm		35.56 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e0					67.585 mm	.75 ns
MT18VDDT6472PHY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT5VDDT3272HIG-26AXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT16VDDF6464HY-40B	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4160 mA	67108864 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.064 Amp			.7 ns
MT4HTF3264HY-800D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1480 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			400 MHz		Not Qualified	2147483648 bit			e3			.028 Amp			.4 ns
MT4HTF3264HIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT16HTF12864HZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT8VDDT3264HDY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT5VDDT3272HG-335F3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2415919104 bit						.025 Amp			.75 ns
MT9VDDT1672HG-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT4VDDT3264HY-40BF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V	31.9 mm	200 MHz	2.45 mm	Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4					67.6 mm	.7 ns
MT9VDDT6472HY-40BA1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.6		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH	e4						.7 ns
MT8VDDT6464HDY-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				166 MHz		Not Qualified	4294967296 bit				NOT SPECIFIED	NOT SPECIFIED				.75 ns
MT18HVS25672CHY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		256MX72	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		3.6 V	18 mm		3.8 mm		19327352832 bit	3 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT8VDDT6464HG-40B	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3600 mA	67108864 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp			.7 ns
MT18VDDF6472HG-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				65 Cel		64MX72	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e0
MT16HTF51264HZ-1GAXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm			Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT16HTF12864HIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT18VDDT12872PHG-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V	8.13 mm		31.75 mm	Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4					67.5 mm	.7 ns
MT8VDDT1664HY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT16HTF25664HY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm			Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4	30	260			67.6 mm
MT4HTF6464HY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT8VDDT12864HDG-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2240 mA	134217728 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	8589934592 bit						.04 Amp			.75 ns
MT9HVF6472CHY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-PDMA-N200		1.9 V	18 mm		3.8 mm		4831838208 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT9HVF12872RHIY-53EE1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT16HTF51264HZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm			Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT8VDDT6464HG-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	e0						.75 ns
MT4VDDT1664HY-265F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1073741824 bit									.75 ns
MT4HTF6464HY-800G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	4294967296 bit									.4 ns
MT4HTF1664HY-40EB3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		920 mA	16777216 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			200 MHz		Not Qualified	1073741824 bit			e3			.02 Amp			.6 ns
MT9VDDT12872HY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT9VDDT12872PHY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit									.75 ns
MT4VDDT1664HY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT18LSDT3272J-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N200		3.6 V				Not Qualified	2415919104 bit	3 V								6 ns
MT16VDDF6464HI-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	e4
MT8HTF6464HDZ-800XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HDY-800D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1500 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	4294967296 bit						.056 Amp			.4 ns
MT53D1024M32D4NQ-046AWT:C	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4DS-062AWT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.8 mm	1600 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT8HTF6464HDY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30.5 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm	.6 ns
MT8HSF3264HDY-53EXX	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M	0 Cel	TIN SILVER COPPER	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1
MT53D1024M32D4NP-046AWT:B	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32					85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT8HTF6464HDY-40EB3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1600 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.04 Amp			.6 ns
MT8HTF6464HTY-40ED3	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX64	64M	-40 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	4294967296 bit						.056 Amp			.6 ns
MT53D1024M32D4DS-053AWT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel		1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.8 mm	1869.1 MHz	10 mm		34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT8HTF3264HY-40EA3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1840 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			200 MHz		Not Qualified	2147483648 bit			e3			.04 Amp			.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.