200 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53E1536M32D4DT-046AIT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1610612736 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		1536MX32	1536M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.95 mm	2136.7 MHz	10 mm		51539607552 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
IS43LQ32256A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM		200	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	NO	COMMON			32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	1.1 mm	1600 MHz	10 mm		8589934592 bit	1.7 V	TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V					16,32	14.5 mm
MT53E256M32D1KS-046AIT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	39.1 mA	268435456 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.95 mm	2133 MHz	10 mm		8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0008 Amp	16,32	14.5 mm
MT53E768M32D4DT-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
NT6AN256T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX32	256M		-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.83 mm	1866 MHz	10 mm		8589934592 bit	1.06 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE					16,32	15 mm
MT53E768M32D4DT-053WT:E	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	85 Cel	3-STATE	768MX32	768M		-25 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E256M32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT53E128M32D2DS-053AIT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	85 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E256M16D1DS-046AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V		e1	30	260		16,32	14.5 mm
MT53B512M32D2NP-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel		512MX32	512M		-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260		16,32	14.5 mm
MT53E256M32D2FW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel	3-STATE	256MX32	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		8589934592 bit	1.06 V		e1	30	260		16,32	14.5 mm
MT53E512M16D1FW-046AIT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	384MX32	384M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
M470T2864QZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1200 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V	3.8 mm	400 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.12 Amp		67.6 mm	.4 ns
MT16HTF25664HIZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3440 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M		-40 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	333 MHz	3.8 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; WD-MAX	e4			.112 Amp		67.6 mm
MT16HTF25664HIZ-667M1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M		-40 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		17179869184 bit	1.7 V	SELF REFRESH; WD-MAX						67.6 mm
MT16HTF25664HY-800G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3760 mA	268435456 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M		0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	17179869184 bit						.112 Amp			.4 ns
MT16HTF25664HZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M		0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		17179869184 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT18HTS25672RHZ-80EH1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3123 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M		0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e3					67.6 mm	.4 ns
MT53E128M32D2DS-053WT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel		128MX32	128M		-25 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E128M32D2FW-046AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	105 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT53E256M16D1FW-046AIT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		4294967296 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2FW-046IT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel	3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M16D1FW-046AAT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DT-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT8HTF12864HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2680 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.056 Amp		67.6 mm
MT9HTF12872RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M		0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT9VDDT6472HIY-335F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	3.8 mm		31.75 mm	Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4					67.6 mm
HYS64D16020GDL-8-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1220 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V		125 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.036 Amp			.8 ns
HYS64D16000GDL-7-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	940 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V		143 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH							.75 ns
HYS64D16001HDL-6-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.7 ns
HYS64T64020HDL-3.7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	900 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	55 Cel	3-STATE	64MX64	64M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N200		1.9 V		267 MHz		Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e3			.03 Amp			.5 ns
HYS64T128021HDL-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1072 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	55 Cel	3-STATE	128MX64	128M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N200		1.9 V		200 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e3			.064 Amp			.6 ns
HYS64T32000GDL-5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	840 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	65 Cel	3-STATE	32MX64	32M		0 Cel		DUAL	1	R-XDMA-N200		1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.6 ns
HYS64D128021HBDL-5-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH							.5 ns
HYS64D128021HBDL-6-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH							.7 ns
HYS64D128021EBDL-5-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH							.5 ns
HYS64T64021HDL-2.5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		64MX64	64M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e3						.4 ns
HYS64D64020GBDL-6-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2080 mA	67108864 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V		166 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.7 ns
HYS64D32000HDL-5-C	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M		0 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH							.5 ns
HYS64T64020HDL-5-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		64MX64	64M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e3						.6 ns
HYS64D16020GDL-7-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1300 mA	16777216 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V		143 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.04 Amp			.75 ns
HYS64D64020HBDL-8-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M		0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.8 ns
HYS64D128021GBDL-6-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	2560 mA	134217728 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-PDMA-N200		2.7 V		166 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.06 Amp			.7 ns
HYS64T32020HDL-2.5-A	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				65 Cel		32MX64	32M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e3						.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.