204 DRAM 681

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KVR16S11/8	Kingston Technology Company	DDR3 DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		NO	COMMON	1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm	800 MHz			68719476736 bit	1.425 V							67.6 mm
KVR16S11S8/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm				34359738368 bit	1.425 V	PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
KVR16LS11S6/2	Kingston Technology Company	DDR3L DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	4,8	NO		1.35		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	1.28 V	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm				17179869184 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY					4,8	67.6 mm
KVR16LS11/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.35		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.12 mm				34359738368 bit	1.28 V	PROGRAMMABLE CAS LATENCY; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
KVR16LS11/8	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			1073741824 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	68719476736 bit									.225 ns
HX316LS9IBK2/8	Kingston Technology Company	DDR3L DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	2	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	4,8	NO		1.35		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	1.28 V	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm				34359738368 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY					4,8	67.6 mm
SQR-SD3I-8G1K6SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		1	MICROELECTRONIC ASSEMBLY				85 Cel		8GX1	8G		-40 Cel		DUAL	1	R-XDMA-N204							8589934592 bit
SQR-SD3M-8G1K6SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		1	MICROELECTRONIC ASSEMBLY				85 Cel		8GX1	8G		-20 Cel		DUAL	1	R-XDMA-N204							8589934592 bit
SQR-SD3M-8G1K8SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		8	MICROELECTRONIC ASSEMBLY				85 Cel		8GX8	8G		-20 Cel		DUAL	1	R-XDMA-N204							68719476736 bit
MT16KTF1G64HZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		1GX64	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT8KTF51264HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.45 mm	70 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX		30	260			67.6 mm
MT4KTF25664HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		256MX64	256M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			67.6 mm
M471B5173QH0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm		3.8 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX						67.6 mm
MT16KTF2G64HZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		137438953472 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX72	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
M471B5273DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1240 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	667 MHz	3.8 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.192 Amp		67.6 mm	.255 ns
MT8JTF12864HZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4800 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			800 MHz		Not Qualified	8589934592 bit			e3			.096 Amp			.225 ns
M471B2873FHS-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				95 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH							.255 ns
M471B5273CH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1960 mA	268435456 words		YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.192 Amp		67.6 mm	.25 ns
MT16JSF25664HY-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M		0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4	30	260
MT8KTF51264HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M		0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	34359738368 bit						.144 Amp
EBJ40UG8EFU5-GNL-F	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
M471B1G73EB0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1060 mA	1073741824 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	68719476736 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			67.6 mm	.225 ns
M471B2873FHS-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				95 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH							.3 ns
M471B5673FH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				95 Cel		256MX64	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED				.255 ns
M471B5773CHS-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	268435456 words		YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.096 Amp		67.6 mm	.25 ns
MT4JSF12864HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1700 mA	134217728 words			COMMON	1.35	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	667 MHz	2.45 mm	Not Qualified	8589934592 bit	1.283 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED	.048 Amp		67.6 mm	.255 ns
MT8JSF25664HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2920 mA	268435456 words		YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M		0 Cel	MATTE TIN	DUAL	1	R-PDMA-N204	1	1.575 V	30.15 mm	667 MHz	30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e3			.096 Amp		67.6 mm
MT8KTF25664HZ-1G6M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	268435456 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M		0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX	e4			.096 Amp		67.6 mm
MT8MTF51264HSZ-1G6E2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		2.45 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
M471B2873GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	533 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH				.08 Amp		67.6 mm	.6 ns
M471B5273EB0-YH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1424 mA	536870912 words		YES	COMMON	1.5	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.13 mm	667 MHz	3.8 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.16 Amp		67.6 mm	.255 ns
M471B5673DZ1-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2360 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M		0 Cel		DUAL	1	R-XDMA-N204	3	1.575 V		533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.176 Amp
M474B1G73QH0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX						67.6 mm
M471B5773DH0-CMA	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	933 MHz	3.8 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.096 Amp		67.6 mm	.195 ns
M471B1G73BH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	1073741824 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	68719476736 bit									.255 ns
M471B5673EH1-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
M474B5273DH0-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		512MX72	512M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.13 mm		3.8 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
M471B5673DZ1-CG8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH
M471B1G73AH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1880 mA	1073741824 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	68719476736 bit					260				.255 ns
M471B1G73AH0-YF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			1073741824 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	68719476736 bit					260				.3 ns
M471B2873GB0-YF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	134217728 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	533 MHz	3.8 mm	Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			260	.08 Amp		67.6 mm
M471B5273DH0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1176 mA	536870912 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N204	1	1.45 V	30.13 mm	800 MHz	3.8 mm	Not Qualified	34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e3			.16 Amp		67.6 mm	.225 ns
M471B1G73EB0-MA0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
M471B5273CH0-CK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	268435456 words		YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	800 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.192 Amp		67.6 mm	.225 ns
M471B5173BH0-YH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1320 mA	536870912 words		YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm	667 MHz	3.8 mm	Not Qualified	34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY				.12 Amp		67.6 mm	.255 ns
M395T5663FB4-CE68	Samsung	DDR2 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4895 mA	268435456 words		YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel		DUAL	1	R-XDMA-N204	2	1.9 V	30.5 mm	333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260			133.35 mm
M471B5273EB0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1472 mA	536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M		0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	34359738368 bit						.16 Amp			.225 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.