204 DRAM 681

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M471B5673GB0-CMA	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	933 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH				.16 Amp	67.6 mm	.6 ns
M471B1G73BH0-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	1073741824 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.13 mm	533 MHz	3.8 mm	Not Qualified	68719476736 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					67.6 mm	.3 ns
M471B2874DZ1-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1460 mA	134217728 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204	3	1.575 V		533 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH			260	.088 Amp
M471B5273CH0-YK0	Samsung	DDR DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm			512MX64	512M			DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					67.6 mm
M471B5773DH0-YH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1000 mA	268435456 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N204	1	1.45 V	30.13 mm	667 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e3			.08 Amp	67.6 mm	.255 ns
M471B2873GB0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	134217728 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	800 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH				.08 Amp	67.6 mm	.6 ns
M471B5773CHS-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	268435456 words	YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	533 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.096 Amp	67.6 mm	.3 ns
M471B1G73BH0-YH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm	667 MHz	3.8 mm	Not Qualified	68719476736 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					67.6 mm	.255 ns
M471B1G73BH0-CK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1560 mA	1073741824 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G	0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	68719476736 bit								.225 ns
M471B1G73AH0-CF8	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	1073741824 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G	0 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	68719476736 bit					260			.3 ns
M471B5773CHS-YH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	268435456 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	667 MHz	3.8 mm	Not Qualified	17179869184 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX			260	.096 Amp	67.6 mm	.255 ns
M471B5673GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH				.16 Amp	67.6 mm	.6 ns
M471B2873GB0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	134217728 words	YES	COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm	800 MHz	3.8 mm	Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			260	.08 Amp	67.6 mm
MT8MTF51264HRZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		2.45 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					67.6 mm
MT16KTF25664HZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm				17179869184 bit	1.283 V	AUTO/SELF REFRESH	e4				67.6 mm
MT8JSF25664HZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4				67.6 mm
MT8JTF12864HIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		128MX64	128M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		8589934592 bit	1.425 V	SELF REFRESH; WD-MAX					67.6 mm
MT16JSF25664HIY-1G5D1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4400 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V		667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4			.16 Amp
MT16JSS51264HIY-80CD1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3320 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	-40 Cel		DUAL		R-PDMA-N204				400 MHz		Not Qualified	34359738368 bit						.16 Amp
MT16JSF25664HY-1G5XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4
EBJ11UE6BASA-DG-E	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1900 mA	134217728 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	8589934592 bit						.112 Amp		.255 ns
MT18KSF51272HZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					67.6 mm
MT8JSF25664HY-1G5B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3680 mA	268435456 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	17179869184 bit						.08 Amp
EBJ40UG8EFU5-DJL-F	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					67.6 mm
MT8JTF51264HDZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4				67.6 mm
MT4JTF6464HY-1G0XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT16MTF1G64HZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					67.6 mm
MT8JTF12864HIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		128MX64	128M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		8589934592 bit	1.425 V	SELF REFRESH; WD-MAX					67.6 mm
EBJ21UE8BASA-AC-E	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2880 mA	268435456 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	17179869184 bit						.208 Amp
MT8JTF25664HIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		256MX64	256M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		17179869184 bit	1.425 V	SELF REFRESH; WD-MAX					67.6 mm
MT8JTF25664HIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT16JSS51264HIY-1G4D1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3800 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	-40 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	34359738368 bit						.16 Amp
MT16JSS51264HY-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4				67.6 mm
MT8JSF12864HY-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH	e4
MT4KTF25664HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX		30	260		67.6 mm
MT16JSF51264HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3016 mA	536870912 words	YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH				.192 Amp	67.6 mm
MT16JTF1G64HIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				68719476736 bit	1.425 V	AUTO/SELF REFRESH	e4				67.6 mm
MT16JSS51264HIY-1G5D1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3800 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	-40 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	34359738368 bit						.16 Amp
MT8JSF25664HY-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT16KTF1G64HZ-1G9E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX					67.6 mm
MT16JSF25664HIY-80BD1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4	30	260
MT8JSF12864HIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		30 mm	Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH					67.6 mm
EBJ11UE6BAU0-AG-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH	e4
MT4JTF6464HY-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT8JSF12864HY-80BB1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2800 mA	134217728 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N204				400 MHz		Not Qualified	8589934592 bit						.08 Amp
MT8MTF51264HSZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		2.45 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					67.6 mm
MT16JSS51264HIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4				67.6 mm
MT8JSF25664HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH					67.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.