204 DRAM 681

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length
MT8KTF51264HZ-1G6D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M		DUAL		R-PDMA-N204			800 MHz		Not Qualified	34359738368 bit
MT8KSF51264HZ-1G4E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX64	512M		DUAL	1	R-XDMA-N204	1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX			67.6 mm
MT8KSF12864HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		DUAL	1	R-XDMA-N204	1.575 V	3.8 mm		30 mm	Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH			67.6 mm
MT8KSF25664HZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M		DUAL	1	R-XDMA-N204	1.575 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			67.6 mm
MT8KTF12864HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	GOLD	ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm				8589934592 bit	1.283 V	AUTO/SELF REFRESH	e4		67.6 mm
MT8KSF25664HDZ-1G1K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	GOLD	ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	SELF REFRESH; WD-MAX	e4		67.6 mm
MT8KTF25664HDZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	GOLD	ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	SELF REFRESH; WD-MAX	e4		67.6 mm
MT8KTF51264HZ-1G9E5	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2008 mA	536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M		DUAL		R-PDMA-N204			933 MHz		Not Qualified	34359738368 bit				.144 Amp
MT8KTF51264HZ-1G4E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	536870912 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M		DUAL		R-PDMA-N204			667 MHz		Not Qualified	34359738368 bit				.144 Amp

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.