204 DRAM 681

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length
MT8JTF12864HDZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				8589934592 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT16JSF25664HIY-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4
MT16JSF25664HIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
EBJ41UF8BAS0-GN-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	68719476736 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT8JTF51264HDZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT4KSF12864HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		2.45 mm	Not Qualified	8589934592 bit	1.283 V	WD-MAX	e4		67.6 mm
MT8JTF12864HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm		3.8 mm		8589934592 bit	1.425 V	SELF REFRESH; WD-MAX			67.6 mm
MT18KSF51272HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.45 V	30.15 mm				38654705664 bit	1.283 V	AUTO/SELF REFRESH	e4		67.6 mm
MT36KSS2G72HSZ-1S6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		2GX72	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			67.6 mm
EBJ21UE8BAU0-AC-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4
MT16JSF25664HIZ-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH
MT8JSF12864HY-1G5XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT8JTF12864HIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT8JSF12864HIY-80BB1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2800 mA	134217728 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	-40 Cel		DUAL		R-PDMA-N204				400 MHz		Not Qualified	8589934592 bit				.08 Amp
MT8JSF25664HIZ-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		256MX64	256M	-40 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm		3.8 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX			67.6 mm
MT8JSF12864HZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		30 mm	Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH			67.6 mm
MT8JSF12864HIZ-80BXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		128MX64	128M	-40 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm		3.8 mm	Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX			67.6 mm
MT4JSF6464HIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT4KSF12864HIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N204		1.45 V	30.15 mm			Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e4		67.6 mm
MT18KSF51272HZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.45 V	30.15 mm				38654705664 bit	1.283 V	AUTO/SELF REFRESH	e4		67.6 mm
MT4JSF6464HY-1G5B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	67108864 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			667 MHz		Not Qualified	4294967296 bit			e3	.04 Amp
MT16KTS1G64HZ-1G9N1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			67.6 mm
MT16JTF25664HZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
EBJ21UE8BAU0-AE-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2880 mA	268435456 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	17179869184 bit				.208 Amp
MT16JSF25664HIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT16JTF1G64HIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				68719476736 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT8JTF25664HY-1G0XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT4JSF6464HIY-1G4B1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	67108864 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX64	64M	-40 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			667 MHz		Not Qualified	4294967296 bit			e3	.04 Amp
MT8JSF12864HZ-1G4F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3920 mA	134217728 words	YES	COMMON	1.5	1.5,3.3	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N204	1	1.575 V	30.15 mm	667 MHz	3.8 mm	Not Qualified	9663676416 bit	1.425 V	SELF REFRESH; WD-MAX	e3	.096 Amp	67.6 mm
MT8JSF12864HIY-1G1B1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3120 mA	134217728 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M	-40 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	8589934592 bit				.08 Amp
MT8JTF51264HDZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT8JSF25664HDZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2040 mA	268435456 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	17179869184 bit				.096 Amp
MT36KSS2G72RHZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		3.8 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY			67.6 mm
EBJ11UE6BAU0-DG-E	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH	e4
MT8JSF25664HZ-80CXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		256MX64	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm		3.8 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX			67.6 mm
MT16JTF25664HZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm				17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT16JSS51264HIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT4JSF6464HY-1G0XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT16JSS51264HY-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3800 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	34359738368 bit				.16 Amp
MT4JSF6464HY-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT8MTF51264HZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX			67.6 mm
EBJ21UE8BAU0-DG-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4
MT16JSS51264HY-80BD1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3320 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				400 MHz		Not Qualified	34359738368 bit				.16 Amp
MT16JSS51264HIY-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT8JSF12864HIY-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH	e4
MT16JSF25664HZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4		67.6 mm
MT4KSF12864HZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		2.45 mm	Not Qualified	8589934592 bit	1.283 V	WD-MAX	e4		67.6 mm
MT16JSS51264HY-1G5D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3800 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	34359738368 bit				.16 Amp

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.