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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT42L128M32D1LL-25AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX32	128M		BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm	4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
MT42L128M64D1KJ-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
MT42L128M32D1LL-3AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX32	128M		BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm	4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
MT42L128M64D2LL-3AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8,16	YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	105 Cel		3-STATE	128MX64	128M	-40 Cel	BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm	333 MHz	12 mm	8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY				4,8,16	12 mm
MT42L64M32D3KU-25AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				64MX32	64M		BOTTOM	1	S-PBGA-B216	1.95 V	.9 mm		12 mm	2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
MT42L192M32D4KJ-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4.7 mA	201326592 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				192MX32	192M		BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm	6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm	10 ns
MT42L64M64D3KJ-18IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				64MX64	64M		BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm	4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
MT42L256M16D1LK-18AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	268435456 words	4,8,16	YES	COMMON	1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	105 Cel		3-STATE	256MX16	256M	-40 Cel	BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm	533 MHz	12 mm	4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY				4,8,16	12 mm
MT42L128M64D1KJ-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm	8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
MT42L128M16D3KJ-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX16	128M		BOTTOM	1	S-PBGA-B216	1.95 V	1 mm		12 mm	2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					12 mm
EDB8164B4PR-1D-F-R	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDB8164B4PR-1D-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDB4064B3PB-8D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				64MX64	64M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8164B4PT-1DAT-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm
MT52L256M64D2LZ-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	268435456 words		YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	85 Cel		3-STATE	256MX64	256M	-30 Cel	BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm	933 MHz	12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	NOT SPECIFIED	NOT SPECIFIED	.012 Amp		12 mm
EDB8164B3PF-8D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8164B4PT-1D-F-D	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDB8164B4PT-1DAT-F-R	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
MT52L256M64D2LZ-107XT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	268435456 words		YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16	.4 mm	105 Cel		3-STATE	256MX64	256M	-30 Cel	BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm	933 MHz	12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM			.012 Amp		12 mm
EDB4064B4PB-1D-F	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	85 Cel			64MX64	64M	-40 Cel	BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm	4294967296 bit	1.7 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8164B3PF-1D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX64	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8064B1PB-8D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				256MX32	256M		BOTTOM	1	S-PBGA-B216	1.3 V	1 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB8164B4PT-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	85 Cel			128MX64	128M	-40 Cel	BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
EDB4064B4PB-1D-F-R	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	85 Cel			64MX64	64M	-30 Cel	BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	4294967296 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
EDB4432BAPC-1D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				128MX32	128M		BOTTOM	1	S-PBGA-B216	1.3 V	.725 mm		12 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB4064B3PB-1D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				64MX64	64M		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDB8164B4PT-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm	85 Cel			128MX64	128M	-40 Cel	BOTTOM	1	S-PBGA-B216	1.95 V	.8 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
MT52L256M64D2PP-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES	CONFIGURABLE	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,12X12,16	.4 mm	85 Cel	NO	COMMON	256MX64	256M	-30 Cel	BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
EDB8064B1PB-6D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				256MX32	256M		BOTTOM	1	S-PBGA-B216	1.3 V	1 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY					12 mm
EDB8132B3PD-1D-F	Micron Technology	DDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.4 mm				256MX32	256M		BOTTOM	1	S-PBGA-B216	1.3 V	.725 mm		12 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	NOT SPECIFIED	NOT SPECIFIED			12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.