64 DRAM 430

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
5962-9454901MYC	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	195 mA	262144 words				5	5	16	FLATPACK	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4			.012 Amp		18.985 mm	80 ns
SDA9253	Infineon Technologies	VIDEO DRAM	COMMERCIAL	64	QFP		SQUARE	PLASTIC/EPOXY		YES	1	CMOS		GULL WING	SYNCHRONOUS	200 mA	217088 words				5	5	12	FLATPACK	QFP64,.66SQ,32	Other Memory ICs	.8 mm	70 Cel		212KX12	212K	0 Cel	TIN LEAD	QUAD	3	S-PQFP-G64	5.5 V	2.45 mm		14 mm	Not Qualified	2605056 bit	4.5 V	16 X 12 SAM PORT	e0			.005 Amp		14 mm	25 ns
SDA9254-2	Infineon Technologies	VIDEO DRAM	COMMERCIAL	64	QFP		SQUARE	PLASTIC/EPOXY		YES	1	CMOS		GULL WING	SYNCHRONOUS	200 mA	217088 words				5	5	12	FLATPACK	QFP64,.66SQ,32	Other Memory ICs	.8 mm	70 Cel		212KX12	212K	0 Cel	TIN LEAD	QUAD	3	S-PQFP-G64	5.5 V	2.45 mm		14 mm	Not Qualified	2605056 bit	4.5 V	16 X 12 SAM PORT	e0			.005 Amp		14 mm	25 ns
TC524162FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524262TR-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC59LM914AMG-45	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS	400 mA	33554432 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm	222 MHz	12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.085 Amp	2,4	16.5 mm	.6 ns
TC524165TR-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC59LM913AMG-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		33554432 words	2,4	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm	200 MHz	12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.65 ns
TC59LM914AMG-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS	350 mA	33554432 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.625 V	1.2 mm	200 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.08 Amp	2,4	16.5 mm	.65 ns
TC524162TR-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524162FT-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC524165TR-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC59LM905AMB-55	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.75 ns
TC524265SF-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					26 mm	60 ns
TC524265TR-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC59LM906AMG-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS	350 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.625 V	1.2 mm	200 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.08 Amp	2,4	16.5 mm	.65 ns
TC524262FT-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC59LM914AMG-37	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS	450 mA	33554432 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.625 V	1.2 mm	266 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.09 Amp	2,4	16.5 mm	.5 ns
TC59LM913AMB-60	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	26 ns
TC524262SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					26 mm	70 ns
TC524162SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25 mm	70 ns
TC59LM913AMB-55	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.75 ns
TC524262FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524162SF-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25 mm	60 ns
TC524265FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524262TR-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524262SF-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					26 mm	60 ns
TC52V4300SF-50	Toshiba	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		GULL WING			545520 words						8	SMALL OUTLINE, SHRINK PITCH			.8 mm			545520X8	545520			DUAL	1	R-PDSO-G64		3 mm		11.2 mm	Not Qualified	4364160 bit								25 mm
TC524162TR-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC59LM905AMB-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	.65 ns
TC524165SF-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25 mm	60 ns
TC524165FT-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC59LM906AMG-37	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS	450 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.625 V	1.2 mm	266 MHz	12.7 mm	Not Qualified	536870912 bit	2.375 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.09 Amp	2,4	16.5 mm	.5 ns
TC524165FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524165SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					25 mm	70 ns
TC524265FT-60	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	60 ns
TC524265TR-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					23.45 mm	70 ns
TC524265SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					26 mm	70 ns
TC59LM913AMB-50	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH						16.5 mm	.65 ns
TC59LM906AMG-45	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS	400 mA	67108864 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	8	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm	222 MHz	12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e1	NOT SPECIFIED	250	.085 Amp	2,4	16.5 mm	.6 ns
TC524300SF-30	Toshiba	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		GULL WING			545520 words						8	SMALL OUTLINE, SHRINK PITCH			.8 mm			545520X8	545520			DUAL	1	R-PDSO-G64		3 mm		11.2 mm	Not Qualified	4364160 bit								25 mm
TC524300SF-20	Toshiba	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		GULL WING			545520 words						8	SMALL OUTLINE, SHRINK PITCH			.8 mm			545520X8	545520			DUAL	1	R-PDSO-G64		3 mm		11.2 mm	Not Qualified	4364160 bit								25 mm
TC59LM905AMB-60	Toshiba	DDR1 DRAM	OTHER	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B64	2.65 V	1.2 mm		12.7 mm	Not Qualified	536870912 bit	2.35 V	AUTO/SELF REFRESH	e0					16.5 mm	26 ns
TC52V4300SF-30	Toshiba	VIDEO DRAM		64	SSOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		GULL WING			545520 words						8	SMALL OUTLINE, SHRINK PITCH			.8 mm			545520X8	545520			DUAL	1	R-PDSO-G64		3 mm		11.2 mm	Not Qualified	4364160 bit								25 mm
KM4216C255GF-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64	5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	80 ns
KM4216V258GF-7	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64	3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	70 ns
KM4216V256G-8	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	110 mA	262144 words				3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64	3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 16 SAM PORT	e0			.01 Amp		26.03 mm	80 ns
KM4216V258GF-6	Samsung	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64	3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 512 X 16 SAM PORT						26.03 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.