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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SMJ55166-80GB	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY			2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V	3.62 mm		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT						24.38 mm	80 ns
SMJ55161-75GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	MOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V			24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	75 ns
5962-9454901MXA	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-STD-883	PIN/PEG	ASYNCHRONOUS	195 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp			80 ns
SMJ55161-80GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	MOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	200 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V			24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	80 ns
SMJ55161-70GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V			24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	70 ns
5962-9564303QXC	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel	GOLD	PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4						75 ns
5962-9454903QXA	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	ASYNCHRONOUS	210 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp			75 ns
5962-9564301QXA	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	ASYNCHRONOUS	200 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp			80 ns
5962-9454901MXX	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e0						80 ns
SMJ55166-70GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V			24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	70 ns
5962-9564303QXA	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp			75 ns
SMJ55166-80GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	200 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V			24.38 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	80 ns
5962-9564301QXX	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e0						80 ns
SMJ55166-75GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	MOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	225 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V	2.23 mm		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	75 ns
SMJ55166-70GB	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel	3-STATE	256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT							70 ns
SMJ55166-75GB	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY			2.54 mm	125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V	3.62 mm		24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT						24.38 mm	75 ns
5962-9454903QXX	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e0						75 ns
5962-9564303QXX	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA		SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		262144 words				5		16	GRID ARRAY				125 Cel		256KX16	256K	-55 Cel		PERPENDICULAR	2	S-CPGA-P68	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT							75 ns
HYB18T1G800AF-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.2 mm	267 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	20 mm	.5 ns
HYB18T1G800AFL-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB39M83200L-133	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND			262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			133 MHz		Not Qualified	8388608 bit			e0
HYB18T1G800AC-3.7	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYB18T1G800AFL-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYB18T1G400AFL-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYB18T1G800AC-5	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYB39M93200L100	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND		195 mA	294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			100 MHz		Not Qualified	9437184 bit			e0			.001 Amp
HYB18T1G400AFL-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB18T1G800AFL-3	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB39M83200L-100	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND		195 mA	262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			100 MHz		Not Qualified	8388608 bit			e0			.001 Amp
HYB18T1G800AC-3	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB18T1G800AF-3	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB18T1G400AC-3S	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm			256MX4	256M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB39M93200L125	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND		195 mA	294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			125 MHz		Not Qualified	9437184 bit			e0			.001 Amp
HYB18T1G400AFL-5	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYB18T1G800AF-5	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	20 mm	.6 ns
HYB39M83200L-150	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND			262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			150 MHz		Not Qualified	8388608 bit			e0
HYB39M93200L120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND			294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			125 MHz		Not Qualified	9437184 bit			e0
HYB18T1G800AFL-5	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYB18T1G400AF-3.7	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.2 mm	267 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	20 mm	.5 ns
HYB18T1G400AC-3.7	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm			256MX4	256M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.5 ns
HYB18T1G400AC-5	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm			256MX4	256M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.6 ns
HYB18T1G400AF-5	Infineon Technologies	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	20 mm	.6 ns
HYB18T1G400AF-3	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB39M83200L-120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND			262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			125 MHz		Not Qualified	8388608 bit			e0
HYB39M93200L133	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND			294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			133 MHz		Not Qualified	9437184 bit			e0
HYB39M93200L166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND		195 mA	294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			166 MHz		Not Qualified	9437184 bit			e0			.001 Amp
HYB39M93200L150	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS		J BEND			294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68			150 MHz		Not Qualified	9437184 bit			e0
HYB18T1G800AC-3S	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B68	1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.