68 DRAM 306

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYB18T1G400AF-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB18T1G800AF-3S	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						20 mm	.45 ns
HYB39M83200L-166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				166 MHz		Not Qualified	8388608 bit			e0			.001 Amp
HYB39M83200L125	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				125 MHz		Not Qualified	8388608 bit			e0			.001 Amp
HYB18T1G400AFL-3	Infineon Technologies	DDR2 DRAM	OTHER	68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB18T1G400AC-3	Infineon Technologies	DDR2 DRAM		68	FBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, FINE PITCH			.8 mm			256MX4	256M			BOTTOM	1	R-PBGA-B68		1.9 V			10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20 mm	.45 ns
HYB25D1G800ACL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G800AFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G400ACL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G400ACL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G400AC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G800AF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G400AC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G800AC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G400ACL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G400AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G800ACL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G800AC-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G400AFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G800AF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G800AC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G800AFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G800AFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G800AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G800AFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G400AF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G800ACL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G400AFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G400AFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G400AF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G400AF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D1G400AC-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G800AF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D1G400AC-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G800ACL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G400ACL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G800AC-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D1G400AFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
K4T2G044QA-HLE6T	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68				333 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.45 ns
K4T2G044QA-HLE60	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68				333 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.45 ns
K4T2G084QA-HLE6	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	268435456 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B68				333 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.45 ns
K4T2G084QA-HLF70	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	268435456 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B68				400 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.4 ns
K4T2G044QA-HLE7T	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68				400 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.4 ns
K4T1G044QA-ZLCC	Samsung	DDR2 DRAM		68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM		R-PBGA-B68	3			200 MHz		Not Qualified	1073741824 bit			e1		260		4,8		.6 ns
K4T2G044QA-HLF7T	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68				400 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.4 ns
K4T2G044QA-HCE6T	Samsung	CACHE DRAM MODULE	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B68	3			333 MHz		Not Qualified	2147483648 bit			e1		260	.015 Amp	4,8		.45 ns
K4T2G084QA-HLE70	Samsung	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	268435456 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B68				400 MHz		Not Qualified	2147483648 bit						.008 Amp	4,8		.4 ns
K4T2G084QA-HCE70	Samsung	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B68	3	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	18 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.