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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
EDJ2108BDBG-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.255 ns
PRN1G8Z31AD8JC-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1600 MHz	9 mm		8589934592 bit							4,8	11 mm
PRN2G8Z22ADFVA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	10 mm		17179869184 bit	1.14 V						4,8	11 mm
PRN2G8Z32DD8JC-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1600 MHz	9 mm		17179869184 bit	1.14 V						4,8	11 mm
PRN1G8Z21CD8SA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm		8589934592 bit							4,8	11 mm
PRN256M8V89CG8GQF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	8 mm		2147483648 bit	1.425 V	SELF REFRESH					4,8	9.6 mm
EDJ2108DEBG-MQ-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					11 mm	.18 ns
SGG512M8V91AG8RAF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
PRN1024M4V91AG8RHF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
SGG512M8V91AG8RAF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
SUU512M8V90BG8RG-125DG	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
SUM1G8Z21CD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm		8589934592 bit							4,8	11 mm
XBA1G8Z01CD8KVA-BLSK	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78				10 mm		8589934592 bit							4,8	11 mm
EDJ4204EFBG-GN-F	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	1073741824 words	4,8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	4,8	10.6 mm
SGG512M8V91AG8RHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
PRM1G8Z21CD8SA-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1600 MHz	7.5 mm		8589934592 bit							4,8	11 mm
EDJ2108BCSE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		235 mA	268435456 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.3 ns
SGG1024M4V91AG8RGF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
SGG512M8V91AG8RHF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
EDJ2108DEBG-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	2147483648 bit							4,8		.225 ns
SUM8192M8ZD8CLU-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4					95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
SUM8192M8ZD8CLU-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4					95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRN1024M8VJ8SNF-125	Micron Technology	DDR3L DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	78 mA	1073741824 words	4,8	YES	COMMON	1.35		8					95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V		800 MHz			8589934592 bit	1.283 V	AUTO/SELF REFRESH				51 Amp	4,8
SGG512M8V91AG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
EDJ2104BCSE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		235 mA	536870912 words	4,8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.3 ns
SUU8192M8ZD8CLU-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4					95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRN4096M4ZD8DVN-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4					95 Cel		4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
EDJ4204EASE-AE-F	Micron Technology	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit						.02 Amp	4,8		.3 ns
EDJ2108EEBG-JS-F	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1					11 mm
SUU1G8Z21ED8VA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1067 MHz	10 mm		8589934592 bit							4,8	11 mm
SUM1G8Z11BD8SA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm		8589934592 bit							4,8	11 mm
SGG1024M4V91AG8RHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
EDJ4204EFBG-GN-F-R	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.6 mm
PRN4096M16ZD8CLU-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		8					95 Cel		4GX8	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
SGG1G8Z01AD8WE-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	8 mm		8589934592 bit							4,8	12 mm
SGG512M8V00HG8DA-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V		800 MHz			4294967296 bit	1.425 V						8
PRN512M8V90BG8RGF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
EDJ4204EFBG-GN-F-D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.6 mm
EDJ4208BASE-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	536870912 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit						.02 Amp	4,8		.255 ns
EDJ1108BFBG-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					10.6 mm	.225 ns
PRN1G8Z11BDFSA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm		8589934592 bit							4,8	11 mm
EDJ1104BFBG-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					10.6 mm	.225 ns
PRN512M8V91AG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
PRN512M8V91AG8RHF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
PRN512M8V91AG8RAF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
SUU8192M8ZD8CLU-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4					95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
EDJ2108EEBG-GN-F	Micron Technology	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		175 mA	268435456 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	2147483648 bit						.012 Amp	4,8		.225 ns
EDJ1108BDBG-DJ-F	Micron Technology	DDR3 DRAM		78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	134217728 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	1073741824 bit							4,8		.255 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.