78 DRAM 1,870

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

PRM512M8V90BG8RGF-125

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

800 MHz

7.5 mm

4294967296 bit

1.425 V

8

10.6 mm

PRM1G8Z91BD8PM-083E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1200 MHz

9 mm

8589934592 bit

4,8

13.2 mm

SUM8192M8ZD8CLU-093H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8589934592 words

YES

1.2

4

95 Cel

8GX4

8G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1067.23 MHz

34359738368 bit

1.14 V

AUTO/SELF REFRESH

EDJ4204BASE-GN-F

Micron Technology

DDR3 DRAM

OTHER

78

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

330 mA

1073741824 words

4,8

COMMON

1.5

1.5

4

GRID ARRAY, FINE PITCH

BGA78,9X13,32

DRAMs

.8 mm

85 Cel

3-STATE

1GX4

1G

0 Cel

BOTTOM

R-PBGA-B78

800 MHz

Not Qualified

4294967296 bit

.02 Amp

4,8

.225 ns

PRN512M8V91AG8RHF-187E

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

534.7 MHz

9 mm

4294967296 bit

1.425 V

8

10.5 mm

PRN1024M4V91AG8RAF-107

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

8

YES

COMMON

1.5

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX4

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

934.5 MHz

10.5 mm

4294967296 bit

1.425 V

8

12 mm

SGG2048M8ZD8DVN-083H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

YES

1.2

8

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1200.48 MHz

17179869184 bit

1.14 V

AUTO/SELF REFRESH

PRN2048M8ZD8DVN-075H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

YES

1.2

8

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1333.33 MHz

17179869184 bit

1.14 V

AUTO/SELF REFRESH

PRM1024M8Z91BD8PMF-083

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1200 MHz

9 mm

8589934592 bit

4,8

13.2 mm

PRA512M8V80AG8RHF-15E

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

667 MHz

9 mm

4294967296 bit

1.425 V

8

10.5 mm

SUU2G8Z22AD8VA-093TP

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

4,8

YES

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1.2 mm

1067 MHz

10 mm

17179869184 bit

1.14 V

4,8

11 mm

PRM2048M8ZD8DVN-083H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

YES

1.2

8

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1200.48 MHz

17179869184 bit

1.14 V

AUTO/SELF REFRESH

SUM8192M8ZD8CLU-083H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8589934592 words

YES

1.2

4

95 Cel

8GX4

8G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1200.48 MHz

34359738368 bit

1.14 V

AUTO/SELF REFRESH

EDJ1108DJBG-MU-F

Micron Technology

DDR3 DRAM

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

128MX8

128M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

1069 MHz

7.5 mm

1073741824 bit

1.425 V

AUTO/SELF REFRESH

8

11 mm

PRN1G8Z11CD8SA-083E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1067 MHz

7.5 mm

8589934592 bit

4,8

11 mm

SGG1024M4V91AG8RGF-15E

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

8

YES

COMMON

1.5

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX4

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

666.66 MHz

7.5 mm

4294967296 bit

1.425 V

8

10.6 mm

SUU512M8V00HG8DA-125TP

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

800 MHz

4294967296 bit

1.425 V

8

SUM1G8Z91BD8PM-093DG

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1067 MHz

9 mm

8589934592 bit

4,8

13.2 mm

PRM2048M8ZD8DVN-075H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

YES

1.2

8

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1333.33 MHz

17179869184 bit

1.14 V

AUTO/SELF REFRESH

PRA1G8Z01BD8WE-075E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1333 MHz

8 mm

8589934592 bit

4,8

12 mm

SUM512M8V90BG8RG-125TP

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

800 MHz

7.5 mm

4294967296 bit

1.425 V

8

10.6 mm

PRM4096M16ZD8CLU-075H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

4294967296 words

YES

1.2

8

95 Cel

4GX8

4G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1333.33 MHz

34359738368 bit

1.14 V

AUTO/SELF REFRESH

PRM1G8Z01AD8WE-083E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1200 MHz

8 mm

8589934592 bit

4,8

12 mm

PRN512M8V91AG8RAF-125

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

800 MHz

10.5 mm

4294967296 bit

1.425 V

8

12 mm

EDJ2104BDBG-AE-F

Micron Technology

DDR3 DRAM

OTHER

78

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

145 mA

536870912 words

8

COMMON

1.5

1.5

4

GRID ARRAY, FINE PITCH

BGA78,9X13,32

DRAMs

.8 mm

85 Cel

3-STATE

512MX4

512M

0 Cel

BOTTOM

R-PBGA-B78

533 MHz

Not Qualified

2147483648 bit

.012 Amp

8

.3 ns

PRM1G8Z21CD8SA-075E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1333 MHz

7.5 mm

8589934592 bit

4,8

11 mm

SUM2G8Z32DD8JC-093TP

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

4,8

YES

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1.2 mm

1067 MHz

9 mm

17179869184 bit

1.14 V

4,8

11 mm

EDJ1108BFBG-GL-F

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

YES

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

128MX8

128M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

7.5 mm

Not Qualified

1073741824 bit

1.425 V

AUTO/SELF REFRESH

e1

10.6 mm

.225 ns

PRN1024M4V91AG8RGF-107

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

8

YES

COMMON

1.5

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX4

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

934.5 MHz

7.5 mm

4294967296 bit

1.425 V

8

10.6 mm

EDJ2108EDBG-DJ-F

Micron Technology

DDR3L DRAM

OTHER

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

268435456 words

YES

1.35

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

256MX8

256M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B78

1.45 V

1.2 mm

7.5 mm

2147483648 bit

1.283 V

AUTO/SELF REFRESH

e1

10.6 mm

.255 ns

SUU1G8Z01AD8WE-093TP

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1067 MHz

8 mm

8589934592 bit

4,8

12 mm

SMG1G8Z01AD8WE-075E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1333 MHz

8 mm

8589934592 bit

4,8

12 mm

EDJ4208EASE-AE-F

Micron Technology

DDR3L DRAM

OTHER

78

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

320 mA

536870912 words

4,8

COMMON

1.35

1.35

8

GRID ARRAY, FINE PITCH

BGA78,9X13,32

DRAMs

.8 mm

85 Cel

3-STATE

512MX8

512M

0 Cel

BOTTOM

R-PBGA-B78

533 MHz

Not Qualified

4294967296 bit

.02 Amp

4,8

.3 ns

PRM1024M8Z91BD8PMF-93E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1067 MHz

9 mm

8589934592 bit

4,8

13.2 mm

EDJ4208EASE-DJ-F

Micron Technology

DDR3L DRAM

OTHER

78

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

325 mA

536870912 words

4,8

COMMON

1.35

1.35

8

GRID ARRAY, FINE PITCH

BGA78,9X13,32

DRAMs

.8 mm

85 Cel

3-STATE

512MX8

512M

0 Cel

BOTTOM

R-PBGA-B78

667 MHz

Not Qualified

4294967296 bit

.02 Amp

4,8

.255 ns

PRN512M8V80AG8RHF-15E

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

667 MHz

9 mm

4294967296 bit

1.425 V

8

10.5 mm

SGG512M8V91AG8RAF-187E

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

512MX8

512M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

534.7 MHz

10.5 mm

4294967296 bit

1.425 V

8

12 mm

PRM1G8Z01BWE-075E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1333 MHz

8 mm

8589934592 bit

4,8

12 mm

SUM1G8Z01AD8WE-093DG

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1067 MHz

8 mm

8589934592 bit

4,8

12 mm

SUU1G8Z11BD8SA-093DG

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1067 MHz

7.5 mm

8589934592 bit

4,8

11 mm

EDJ2108BDBG-AE-F

Micron Technology

DDR3 DRAM

OTHER

78

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

268435456 words

8

COMMON

1.5

1.5

8

GRID ARRAY, FINE PITCH

BGA78,9X13,32

DRAMs

.8 mm

85 Cel

3-STATE

256MX8

256M

0 Cel

BOTTOM

R-PBGA-B78

533 MHz

Not Qualified

2147483648 bit

.012 Amp

8

.3 ns

PRA1G8Z91BD8PM-083E

Micron Technology

DDR4 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

4,8

COMMON

1.2

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX8

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.2 mm

1200 MHz

9 mm

8589934592 bit

4,8

13.2 mm

EDJ1108DBSE-AG-F

Micron Technology

DDR3 DRAM

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

270 mA

134217728 words

8

YES

COMMON

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

3-STATE

128MX8

128M

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.17 mm

533 MHz

8 mm

1073741824 bit

1.425 V

AUTO/SELF REFRESH

.06 Amp

8

11.5 mm

20 ns

SMG2048M8ZD8DVN-083H

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

YES

1.2

8

95 Cel

2GX8

2G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1200.48 MHz

17179869184 bit

1.14 V

AUTO/SELF REFRESH

PRN4096M16ZD8CLU-083J

Micron Technology

DDR4 DRAM

OTHER

78

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

4294967296 words

YES

1.2

8

95 Cel

4GX8

4G

0 Cel

BOTTOM

1

R-PBGA-B78

1.26 V

1200.48 MHz

34359738368 bit

1.14 V

AUTO/SELF REFRESH

SGG1024M4V91AG8RAF-125

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

8

YES

COMMON

1.5

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

.8 mm

95 Cel

1GX4

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

800 MHz

10.5 mm

4294967296 bit

1.425 V

8

12 mm

EDJ2104BDBG-GN-F

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

YES

1.5

4

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

512MX4

512M

0 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

7.5 mm

2147483648 bit

1.425 V

AUTO/SELF REFRESH

e1

10.6 mm

EDJ4204BFBG-DJ-F

Micron Technology

DDR3 DRAM

OTHER

78

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

160 mA

1073741824 words

4,8

YES

COMMON

1.5

1.5

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA78,9X13,32

DRAMs

.8 mm

85 Cel

3-STATE

1GX4

1G

0 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

667 MHz

9 mm

Not Qualified

4294967296 bit

1.425 V

AUTO/SELF REFRESH

.012 Amp

4,8

10.6 mm

20 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.