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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SUU1G8Z11BD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm		8589934592 bit					4,8	11 mm
EDJ2108BDBG-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	2147483648 bit				.012 Amp	8		.3 ns
PRA1G8Z91BD8PM-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm		8589934592 bit					4,8	13.2 mm
EDJ1108DBSE-AG-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	134217728 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.17 mm	533 MHz	8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH		.06 Amp	8	11.5 mm	20 ns
SMG2048M8ZD8DVN-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRN4096M16ZD8CLU-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		8					95 Cel		4GX8	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
SGG1024M4V91AG8RAF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	10.5 mm		4294967296 bit	1.425 V				8	12 mm
EDJ2104BDBG-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm
EDJ4204BFBG-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	1073741824 words	4,8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH		.012 Amp	4,8	10.6 mm	20 ns
EDJ1108BDBG-AE-F	Micron Technology	DDR3 DRAM		78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	134217728 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	1073741824 bit					4,8		.3 ns
SMG2048M8ZD8DVN-075H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1333.33 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRN512M8V80AGDRHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	9 mm		4294967296 bit	1.425 V				8	10.5 mm
EDJ2104EDBG-AE-F	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1			10.6 mm	.3 ns
EDJ5304AASE-AE-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY						128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
EDJ5308AASE-DG-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		8	GRID ARRAY						64MX8	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
SUU512M8V00HG8DA-125DG	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V		800 MHz			4294967296 bit	1.425 V				8
EDJ2108DEBG-JS-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			11 mm
EDJ4208BFBG-GN-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				10.6 mm	20 ns
EDJ1108BFSE-GL-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.225 ns
SGG1024M4V91AG8RAF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	10.5 mm		4294967296 bit	1.425 V				8	12 mm
PRA1G8Z01CD8WE-083	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	8 mm		8589934592 bit					4,8	12 mm
SUU1G8Z91BD8PM-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm		8589934592 bit					4,8	13.2 mm
PRN512M8V80BG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V				8	10.5 mm
PRN256M8V69AG8GKF-15E	Micron Technology	DDR3 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	9 mm		2147483648 bit	1.425 V	SELF REFRESH			8	11.5 mm
EDJ4208BFBG-DJ-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				10.6 mm	20 ns
SUM2G8Z22AD8VA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1067 MHz	10 mm		17179869184 bit	1.14 V				4,8	11 mm
EDJ4208BASE-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	536870912 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	4294967296 bit				.02 Amp	4,8		.225 ns
SMG1G8Z01AD8WE-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	8 mm		8589934592 bit					4,8	12 mm
PRM1G8Z11BDFSA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm		8589934592 bit					4,8	11 mm
SGG512M8V91AG8RGF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	7.5 mm		4294967296 bit	1.425 V				8	10.6 mm
SUU2G8Z32DD8JC-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1067 MHz	9 mm		17179869184 bit	1.14 V				4,8	11 mm
EDJ2104BDBG-8C-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78			400 MHz		Not Qualified	2147483648 bit				.012 Amp	8		.4 ns
PRN1G8Z11BD8SA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	7.5 mm		8589934592 bit					4,8	11 mm
SUU1G8Z01BD8WE-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm		8589934592 bit					4,8	12 mm
SGG512M8V91AG8RGF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	7.5 mm		4294967296 bit	1.425 V				8	10.6 mm
PRN512M8V70SGDRAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	10 mm		4294967296 bit	1.425 V				8	12 mm
EDJ4204EASE-DJ-F	Micron Technology	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit				.02 Amp	4,8		.255 ns
PRA1G8Z01AD8WE-083E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	8 mm		8589934592 bit					4,8	12 mm
EDJ4208BASE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit				.02 Amp	4,8		.3 ns
EDJ4204EFBG-DJ-F-R	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH				10.6 mm
SUU8192M8ZD8CLU-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4					95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
SGG1024M4V91AG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V				8	10.5 mm
SGG512M8V70SG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	10 mm		4294967296 bit	1.425 V				8	12 mm
PRN2048M8ZD8DVN-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
SUM1G8Z91BD8PM-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm		8589934592 bit					4,8	13.2 mm
EDJ4204BASE-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	1073741824 words	4,8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit				.02 Amp	4,8		.255 ns
EDJ2108EEBG-DJ-F	Micron Technology	DDR3L DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	268435456 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	2147483648 bit				.012 Amp	4,8		.255 ns
PRN1G8Z01BD8WE-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	8 mm		8589934592 bit					4,8	12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.