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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SMG2048M8ZD8DVN-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
EDJ1108BFBG-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.3 ns
PRN512M8V91AG8RGF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	7.5 mm		4294967296 bit	1.425 V				8	10.6 mm
SUU1G8Z91BD8PM-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm		8589934592 bit					4,8	13.2 mm
EDJ4208EFBG-DJ-F	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			10.6 mm
PRM1G8Z31AD8JC-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1600 MHz	9 mm		8589934592 bit					4,8	11 mm
EDJ5308AASE-DJ-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		8	GRID ARRAY						64MX8	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
SGG2048M8ZD8DVN-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
EDJ2108DEBG-MU-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			11 mm
PRN1G8Z91BD8PM-083	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1200 MHz	9 mm		8589934592 bit					4,8	13.2 mm
SGG1G8Z01AD8WE-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1333 MHz	8 mm		8589934592 bit					4,8	12 mm
PRA512M8V00HG8DA-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V		800 MHz			4294967296 bit	1.425 V				8
PRN2048M8ZD8DVN-083H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
PRN2048M4VJ8SNF-125	Micron Technology	DDR3L DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	78 mA	2147483648 words	4,8	YES	COMMON	1.35		4					95 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V		800 MHz			8589934592 bit	1.283 V	AUTO/SELF REFRESH		51 Amp	4,8
PRN1024M8VJ8SNF-107	Micron Technology	DDR3L DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	81 mA	1073741824 words	4,8	YES	COMMON	1.35		8					95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V		934.57 MHz			8589934592 bit	1.283 V	AUTO/SELF REFRESH		53 Amp	4,8
PRN512M8V91AG8RHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	9 mm		4294967296 bit	1.425 V				8	10.5 mm
EDJ1104BFSE-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.225 ns
EDJ1108BFSE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.3 ns
SUM1G8Z01BD8WE-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	8 mm		8589934592 bit					4,8	12 mm
PRN1G8Z21ED8VA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1333 MHz	10 mm		8589934592 bit					4,8	11 mm
PRM4096M16ZD8CLU-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		8					95 Cel		4GX8	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRN1024M4V91AG8RAF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	10.5 mm		4294967296 bit	1.425 V				8	12 mm
PRM2048M8ZD8DVN-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8					95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
EDJ1104BFSE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.3 ns
SUU2G8Z22AD8VA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1067 MHz	10 mm		17179869184 bit	1.14 V				4,8	11 mm
EDJ1108BDBG-GL-F	Micron Technology	DDR3 DRAM		78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	134217728 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	1073741824 bit					4,8		.225 ns
PRM1G8Z11BDFSA-062E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1600 MHz	7.5 mm		8589934592 bit					4,8	11 mm
EDJ2104EDBG-DJ-F	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1			10.6 mm	.255 ns
SMG512M8V70SG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	10 mm		4294967296 bit	1.425 V				8	12 mm
SGG1024M4V91AG8RAF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	10.5 mm		4294967296 bit	1.425 V				8	12 mm
PRM512M8V80AG8RHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	9 mm		4294967296 bit	1.425 V				8	10.5 mm
PRN1024M4V91AG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	10.5 mm		4294967296 bit	1.425 V				8	12 mm
SUU1G8Z11CD8SA-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	7.5 mm		8589934592 bit					4,8	11 mm
EDJ2108BASE-8C-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			11 mm
EDJ1108BFSE-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.225 ns
EDJ1108BFBG-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			10.6 mm	.255 ns
EDJ1108DBSE-8A-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	134217728 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.17 mm	400 MHz	8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH		.05 Amp	8	11.5 mm	20 ns
SUU8192M8ZD8CLU-093H	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2		4					95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1067.23 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
PRM1G8Z91BD8PM-93E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.2 mm	1067 MHz	9 mm		8589934592 bit					4,8	13.2 mm
PRN512M8V80AG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V				8	10.5 mm
PRN512M8V91AG8RGF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V				8	10.6 mm
PRA512M8V70SG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	10 mm		4294967296 bit	1.425 V				8	12 mm
EDJ2104BASE-8C-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			11 mm
SUU512M8V90BG8RGF-125TP	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V				8	10.6 mm
SUM512M8V00HG8DA-125DG	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V		800 MHz			4294967296 bit	1.425 V				8
PRN1024M8VJ8SNF-093	Micron Technology	DDR3L DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8	YES	COMMON	1.35		8					95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V		1066 MHz			8589934592 bit	1.283 V	AUTO/SELF REFRESH			4,8
PRM4096M16ZD8CLU-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		8					95 Cel		4GX8	4G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V		1200.48 MHz			34359738368 bit	1.14 V	AUTO/SELF REFRESH
EDJ1108DBSE-DG-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	310 mA	134217728 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.17 mm	666.66 MHz	8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH		.065 Amp	8	11.5 mm	20 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.