Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
BLOCK ORIENTED PROTOCOL |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
COMMON |
2.5 |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
64MX16 |
64M |
DUAL |
1 |
R-XDMA-N184 |
2.63 V |
711 MHz |
Not Qualified |
1073741824 bit |
2.37 V |
SELF CONTAINED REFRESH |
1.5 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
128MX64 |
128M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
8589934592 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.6 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
7150 mA |
268435456 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
166 MHz |
Not Qualified |
19327352832 bit |
2.3 V |
AUTO/SELF REFRESH |
e3 |
1.22 Amp |
.7 ns |
||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2820 mA |
268435456 words |
YES |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
DRAMs |
1 mm |
55 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
200 MHz |
Not Qualified |
19327352832 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.62 Amp |
.6 ns |
||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
3420 mA |
67108864 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
143 MHz |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.126 Amp |
.75 ns |
|||||||||||||||||
Infineon Technologies |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
BLOCK ORIENTED PROTOCOL |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
COMMON |
2.5 |
1.8/2.5,2.5 |
18 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
128MX18 |
128M |
DUAL |
1 |
R-XDMA-N184 |
2.63 V |
800 MHz |
Not Qualified |
2415919104 bit |
2.37 V |
SELF CONTAINED REFRESH |
2.06 ns |
|||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N200 |
2.7 V |
125 MHz |
Not Qualified |
4294967296 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.8 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
1.8 |
4 |
MICROELECTRONIC ASSEMBLY |
128MX4 |
128M |
MATTE TIN |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
536870912 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
214 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
840 mA |
33554432 words |
YES |
COMMON |
1.8 |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM214,16 |
DRAMs |
.4 mm |
65 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N214 |
1.9 V |
200 MHz |
Not Qualified |
2147483648 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.6 ns |
|||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
166 MHz |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.7 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
3440 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
70 Cel |
3-STATE |
128MX64 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N200 |
2.7 V |
166 MHz |
Not Qualified |
8589934592 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.176 Amp |
.7 ns |
|||||||||||||||||
Infineon Technologies |
RAMBUS DRAM MODULE |
84 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
BLOCK ORIENTED PROTOCOL |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
18 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
32MX18 |
32M |
DUAL |
1 |
R-XDMA-N184 |
2.63 V |
800 MHz |
Not Qualified |
603979776 bit |
2.37 V |
45 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1080 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
25.4 mm |
Not Qualified |
603979776 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.03 Amp |
60 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
4831838208 bit |
1.7 V |
AUTO/SELF REFRESH |
.45 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
130 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
603979776 bit |
3 V |
AUTO/SELF REFRESH |
.001 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
4294967296 bit |
1.7 V |
AUTO/SELF REFRESH |
.4 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
256MX72 |
256M |
MATTE TIN |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
19327352832 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
214 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
856 mA |
67108864 words |
YES |
COMMON |
1.8 |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM214,16 |
DRAMs |
.4 mm |
65 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N214 |
1.9 V |
200 MHz |
Not Qualified |
4294967296 bit |
1.7 V |
AUTO/SELF REFRESH |
.032 Amp |
.6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
720 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
31.75 mm |
133 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
5.4 ns |
||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1800 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
38.1 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.05 Amp |
60 ns |
||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
.5 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2790 mA |
67108864 words |
YES |
COMMON |
2.6 |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
200 MHz |
Not Qualified |
4294967296 bit |
2.5 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.6 ns |
||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX64 |
64M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N200 |
2.7 V |
Not Qualified |
4294967296 bit |
2.5 V |
AUTO/SELF REFRESH |
.5 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
680 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
100 MHz |
Not Qualified |
2147483648 bit |
3 V |
AUTO/SELF REFRESH |
.008 Amp |
6 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.75 ns |
||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1360 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
2147483648 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
990 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
25.4 mm |
Not Qualified |
150994944 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.03 Amp |
60 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
4831838208 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
210 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
2147483648 bit |
.002 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
.5 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
130 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
.001 Amp |
6 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2180 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
166 MHz |
Not Qualified |
9663676416 bit |
2.3 V |
AUTO/SELF REFRESH |
.7 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
65 Cel |
128MX64 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N200 |
1.9 V |
Not Qualified |
8589934592 bit |
1.7 V |
AUTO/SELF REFRESH |
.4 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
2.6 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
19327352832 bit |
2.5 V |
AUTO/SELF REFRESH |
.5 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
110 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
1207959552 bit |
3 V |
.001 Amp |
6 ns |
|||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1440 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
100 MHz |
Not Qualified |
1073741824 bit |
3 V |
AUTO/SELF REFRESH |
.016 Amp |
8 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.7 ns |
||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
16777216 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N184 |
143 MHz |
Not Qualified |
1207959552 bit |
.75 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
RAMBUS DRAM MODULE |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
BLOCK ORIENTED PROTOCOL |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
COMMON |
2.5 |
1.8/2.5,2.5 |
16 |
MICROELECTRONIC ASSEMBLY |
DIMM184,40 |
DRAMs |
1 mm |
3-STATE |
128MX16 |
128M |
DUAL |
1 |
R-XDMA-N184 |
2.63 V |
600 MHz |
Not Qualified |
2147483648 bit |
2.37 V |
SELF CONTAINED REFRESH |
||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
260 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
268435456 bit |
.002 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
1.8 |
8 |
MICROELECTRONIC ASSEMBLY |
64MX8 |
64M |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
536870912 bit |
1.7 V |
AUTO/SELF REFRESH |
|||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2025 mA |
33554432 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
143 MHz |
Not Qualified |
2415919104 bit |
2.3 V |
AUTO/SELF REFRESH |
.75 ns |
||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
4590 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
125 MHz |
Not Qualified |
9663676416 bit |
2.3 V |
AUTO/SELF REFRESH |
.8 ns |
||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
860 mA |
16777216 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N200 |
2.7 V |
167 MHz |
Not Qualified |
1073741824 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.7 ns |
|||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
800 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N72 |
3.6 V |
25.4 mm |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
50 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
256MX72 |
256M |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
Not Qualified |
19327352832 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.6 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
YES |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.75 ns |
||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1530 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
36 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
38.1 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.03 Amp |
60 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.