DIMM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KVR16S11/8	Kingston Technology Company	DDR3 DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		NO	COMMON	1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm	800 MHz			68719476736 bit	1.425 V							67.6 mm
KVR16S11S8/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm				34359738368 bit	1.425 V	PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
KVR16LN11/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30 mm				34359738368 bit	1.28 V	PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM	e4					133.35 mm
KVR16LS11S6/2	Kingston Technology Company	DDR3L DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	4,8	NO		1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		256MX64	256M	1.28 V	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm				17179869184 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY					4,8	67.6 mm
MTA18ASF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MT18HTF12872AZ-80EG1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1413 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M		0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	9663676416 bit			e3						.4 ns
KVR16LS11/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.12 mm				34359738368 bit	1.28 V	PROGRAMMABLE CAS LATENCY; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
KVR16LS11/8	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			1073741824 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G		0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	68719476736 bit									.225 ns
KVR16LN11/8	Kingston Technology Company	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words				1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30 mm				68719476736 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM						133.35 mm
MTA18ASF2G72PDZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MT8HTF12864HDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1430 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp		67.6 mm	.4 ns
HX316LS9IBK2/8	Kingston Technology Company	DDR3L DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	2	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	4,8	NO		1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M	1.28 V	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm				34359738368 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY					4,8	67.6 mm
MT36KSF2G72PZ-1G6E1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY		8		1 mm	95 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		154618822656 bit	1.283 V	SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA18ASF2G72PDZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1466 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
M393A1G40DB0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm			1GX72	1G				DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA9ASF1G72PZ-2G9E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1665 mA	1073741824 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1466 MHz	3.9 mm		77309411328 bit	1.14 V					.198 Amp	8	133.35 mm
HMA84GR7CJR4N-VK	Sk Hynix	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.88 mm		3.98 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
HMT42GR7BFR4A-PB	Sk Hynix	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.33 mm		7.65 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX		20	260			133.75 mm
MTA18ASF4G72HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY					95 Cel		4GX72	4G		0 Cel		ZIG-ZAG	1	R-XZMA-N260			30.15 mm	1612.9 MHz	3.7 mm		309237645312 bit		AUTO/SELF REFRESH; WD-MAX				.684 Amp		69.6 mm
SQR-SD3I-8G1K6SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		1	MICROELECTRONIC ASSEMBLY					85 Cel		8GX1	8G		-40 Cel		DUAL	1	R-XDMA-N204							8589934592 bit
SQR-SD3M-8G1K6SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		1	MICROELECTRONIC ASSEMBLY					85 Cel		8GX1	8G		-20 Cel		DUAL	1	R-XDMA-N204							8589934592 bit
SQR-SD3M-8G1K8SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		8	MICROELECTRONIC ASSEMBLY					85 Cel		8GX8	8G		-20 Cel		DUAL	1	R-XDMA-N204							68719476736 bit
M393A4K40BB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES	COMMON	1.2	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		Other Memory ICs	.85 mm	85 Cel	3-STATE	4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1200 MHz	3.9 mm	Not Qualified	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm	.175 ns
MT16KTF1G64HZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		1GX64	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT8KTF51264HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				.45 mm	70 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX		30	260			67.6 mm
HMA84GR7DJR4N-XN	Sk Hynix	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			.85 mm	85 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.88 mm	1600 MHz	3.98 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
M393A4K40DB3-CWE	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words				1.2		72	MICROELECTRONIC ASSEMBLY							4GX72	4G				DUAL	1	R-XDMA-N288							274877906944 bit
MTA36ASF4G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					95 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
M378T2953EZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M		0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp			.45 ns
MT4KTF25664HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				.6 mm	70 Cel		256MX64	256M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			67.6 mm
MTA9ADF1G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					95 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		2.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
HMA82GR7CJR8N-VK	Sk Hynix	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.88 mm		3.98 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
M366S1654ETS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
M366S3253ETS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			5.4 ns
M374S1623FTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1485 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.018 Amp			5.4 ns
M374S1723FTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.018 Amp			5.4 ns
M393A2K40CB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	95 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		4.3 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G1B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTC4C10163S1SC48BA1	Micron Technology	DDR5 DRAM MODULE		262	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	778 mA	1073741824 words		YES		1.1		64	MICROELECTRONIC ASSEMBLY					95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N262				2403.8 MHz			68719476736 bit		SELF REFRESH				.065 Amp
MTA4ATF1G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES	COMMON			64	MICROELECTRONIC ASSEMBLY					95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N260				1600 MHz			68719476736 bit		AUTO/SELF REFRESH		30	260
MTA4ATF51264HZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX						69.6 mm
M471B5173QH0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				.6 mm	85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm		3.8 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX						67.6 mm
MTA4ATF51264HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX						69.6 mm
MTA8ATF51264HZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MT16KTF2G64HZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		137438953472 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				.6 mm	70 Cel		512MX72	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MTA8ATF1G64HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.