DIMM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M372V1680BB0-C600	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N168			31.75 mm			Not Qualified	1207959552 bit						.03 Amp		60 ns
KMM466S424CT-F00	Samsung	DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				.8 mm	70 Cel		4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V	25.53 mm		3.81 mm		268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX					67.6 mm
M832G0115AP0-C7C	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	132	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	290 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM132		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N132		3.6 V		133 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.002 Amp		6 ns
M393B5273CH0-YF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2340 mA	536870912 words	YES	COMMON	1.5	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH			260	.786 Amp	133.35 mm	.3 ns
MR18R0828BN1-CK7	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	64MX18	64M			DUAL	1	R-XDMA-N184		2.63 V		711 MHz		Not Qualified	1207959552 bit	2.37 V	SELF CONTAINED REFRESH						45 ns
KMM372V404BS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	600 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp		60 ns
M377S1723CT3-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2390 mA	16777216 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH				.011 Amp		6 ns
M470L6524DU0-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		.75 ns
KMM372F1600AS-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2700 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp		50 ns
M368L3313BT0-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
KMMR16R8GAC1-SG6	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words			2.5		16	MICROELECTRONIC ASSEMBLY							128MX16	128M			DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	2147483648 bit	2.37 V
M393T5168MZ0-CC	Samsung	CACHE DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		8160 mA	536870912 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			200 MHz		Not Qualified	38654705664 bit			e3			1.272 Amp		.6 ns
M393B1K70CH0-CF8	Samsung	DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4230 mA	1073741824 words	YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH			260	1.002 Amp	133.35 mm	.3 ns
M393T6553BG0-CE6	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							64MX72	64M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	SELF CONTAINED REFRESH		30	230			.45 ns
M474A2K43BB1-CWE	Samsung	DDR4 DRAM MODULE			DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words			1.2		8	MICROELECTRONIC ASSEMBLY							16GX8	16G			DUAL	1	R-XDMA-N							137438953472 bit
MD16R162GDF0-CM9	Samsung	RAMBUS DRAM MODULE		232	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY							128MX32	128M			DUAL	1	R-XDMA-N232		2.63 V				Not Qualified	4294967296 bit	2.37 V	SELF CONTAINED REFRESH
M393T6553EZA-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.5 ns
M470L0914DT0-CB0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp		.75 ns
M312L5720CZ0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		166 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.7 ns
KMM366S1623CT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	2	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V					.016 Amp		6 ns
M381L3223DTL-LB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		166 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH						.7 ns
M393T2953BZ3-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3785 mA	134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		267 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH				.784 Amp		.5 ns
M364C0883BJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp		50 ns
M485L1624FU0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.7 ns
M395T1K66AZ4-YE68	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4000 mA	1073741824 words	YES	COMMON	1.55	1.5,1.55	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	3	1.6 V		333 MHz		Not Qualified	77309411328 bit	1.5 V	AUTO/SELF REFRESH			260	2.395 Amp
M372V1680CJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	31.75 mm			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp		50 ns
M470T2863EH3-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	792 mA	134217728 words	YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	3	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		67.6 mm	.4 ns
M470L1714BT0-LA2	Samsung	DDR1 DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.34 Amp		.75 ns
M391T5663QZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2565 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260	.27 Amp		.4 ns
M383L3310BT1-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		125 MHz		Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
M378T5663AZ3-CE600	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2760 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	17179869184 bit						.24 Amp		.45 ns
KMM366S824BT-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	35.052 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp		6 ns
M393T6553CZ0-CD5000	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							64MX72	64M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH						.5 ns
M470L3223DT0-CA0	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1880 mA	33554432 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		100 MHz		Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH						.8 ns
KMMR18R88C-RM8	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	64MX18	64M			DUAL		R-PDMA-N184				800 MHz		Not Qualified	1207959552 bit								40 ns
KMMR18R8GC-RM8	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	128MX18	128M			DUAL		R-PDMA-N184				800 MHz		Not Qualified	2415919104 bit
M391T6553BG0-LE6	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							64MX72	64M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH						.45 ns
KMM366S1603BTL-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1040 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N168				100 MHz		Not Qualified	1073741824 bit						.016 Amp		6 ns
M368L6423CT1-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
M485L0914DT0-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1500 mA	8388608 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N200	1	2.7 V		133 MHz		Not Qualified	603979776 bit	2.3 V	AUTO/SELF REFRESH				.0125 Amp		.75 ns
KMM364C400AK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.05 Amp		50 ns
M366F0484DT1-C60	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp		60 ns
M372V3280DJ4-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1998 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	50.8 mm			Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp		50 ns
MR18R1622AF0-CG6	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	32MX18	32M			DUAL	1	R-XDMA-N184	1	2.63 V		600 MHz		Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH						53.3 ns
KMM466S424AT-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N144				100 MHz		Not Qualified	268435456 bit						.008 Amp		7 ns
M393T2953EZA-CE7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.4 ns
M395T5160CZ4-CE620	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							512MX72	512M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH
M381L6423FUM-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3830 mA	67108864 words	YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		200 MHz		Not Qualified	4831838208 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.65 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.