DIMM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M312L5623AUS-CB3	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4480 mA	268435456 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184	3	2.7 V		166 MHz		Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH			260	.77 Amp		.7 ns
M368L6523CUS-LCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3080 mA	67108864 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		200 MHz		Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		.65 ns
M368L1713ETM-LC4	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2650 mA	16777216 words	YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		200 MHz		Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH				.025 Amp		.65 ns
KMM377S3320T1-GL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	2	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	2415919104 bit	3 V					.02 Amp		6 ns
M374S3323AT0-C75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2250 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.018 Amp		5.4 ns
M393B5270DH0-YH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2780 mA	536870912 words	YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm	667 MHz	4 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY				.72 Amp	133.35 mm	.25 ns
M391T6453FG0-CD500	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2925 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	4831838208 bit			e3					.5 ns
M374S0823DTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1215 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.009 Amp		6 ns
M474A2K43DB1-CWE	Samsung	DDR4 DRAM MODULE			DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD			17179869184 words			1.2		8	MICROELECTRONIC ASSEMBLY							16GX8	16G			DUAL	1	R-XDMA-N							137438953472 bit
KMM366S424CTS-G8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V		125 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.004 Amp		6 ns
M393B1G73EB0-YK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.15 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.35 mm
M366S1723ATS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp		6 ns
M383L2923BTS-CAA	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5050 mA	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH						.75 ns
M470T5267AZ3-LE7	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3280 mA	536870912 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	95 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N200	3			400 MHz		Not Qualified	34359738368 bit					260	.128 Amp		.4 ns
KMM366S1623CT-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	2	R-XDMA-N168		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V					.016 Amp		6 ns
M464S6453CKS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp		5.4 ns
M366S0823ETS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp		5.4 ns
M464S3254DTS-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp		6 ns
M378T3354CZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.6 ns
KMM374F400BK-7	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp		70 ns
M378T6453FF0-CD500	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2600 mA	67108864 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	4294967296 bit			e3			.128 Amp		.5 ns
M312L2920CUS-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6480 mA	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		Other Memory ICs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.42 Amp		.75 ns
KMM366F400CK-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1280 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		60 ns
M393T3253GZ3-CD5	Samsung	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							32MX72	32M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH						.5 ns
M485L2829CU0-LA2	Samsung	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3330 mA	134217728 words	YES	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V		133 MHz		Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			.75 ns
KMM366F400CK1-6	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1280 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		60 ns
M364E0884BT0-C50	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	500 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.03 Amp		50 ns
M368L0914DTL-LB0	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	8388608 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp		.75 ns
M377S6428MT3-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3780 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH				.038 Amp		6 ns
M378A2K43BB1-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY				.85 mm			2GX64	2G			DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M375S0823CT0-C1H0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1127 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel	TIN SILVER COPPER	DUAL		R-PDMA-N168	3			100 MHz		Not Qualified	603979776 bit			e1			.011 Amp		6 ns
M368L6423EUM-CC4	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.6		64	MICROELECTRONIC ASSEMBLY					70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N184	2	2.7 V				Not Qualified	4294967296 bit	2.5 V	AUTO/SELF REFRESH						.65 ns
M393T2953CZA-CE7	Samsung	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							128MX72	128M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH						.4 ns
M395T6553EZ4-CE76	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH			260
M366S3253CTU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp		5.4 ns
KMM332V804BS-L6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	224 mA	8388608 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		DUAL	1	R-XDMA-N72		3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp		60 ns
M393B2G70CB0-MA0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		4 mm		154618822656 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M368L1713CTL-CA2	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2800 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.032 Amp		.75 ns
M391T6553GZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1890 mA	67108864 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH			260	.072 Amp		.4 ns
M393T5663CZA-E60	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30 mm		4 mm		19327352832 bit	1.7 V	AUTO/SELF REFRESH; SEATED HGT-NOM					133.35 mm	.45 ns
KMMR16R86AC1-SK8	Samsung	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words			2.5		16	MICROELECTRONIC ASSEMBLY							48MX16	48M			DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	805306368 bit	2.37 V
M390S3320ETU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4100 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH				.04 Amp		5.4 ns
M374S0823DTS-C75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1215 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		133 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.009 Amp		6 ns
KMM366F883CK2-5	Samsung	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	2	R-XDMA-N168		3.6 V				Not Qualified	536870912 bit	3 V					.004 Amp		50 ns
M390S6450ETU-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3740 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V		133 MHz		Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH				.04 Amp		5.4 ns
M471A5143EB0-CPB	Samsung	DDR DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY				.5 mm			512MX64	512M			DUAL	1	R-XDMA-N260		1.26 V	30.15 mm		3.7 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
M374S0823CTS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1125 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V		100 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH				.009 Amp		6 ns
M470L1714BT0-CA2	Samsung	DDR1 DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1820 mA	16777216 words	YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	1	2.7 V		133 MHz		Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH				.34 Amp		.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.