DIMM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M471B5273DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1240 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	667 MHz	3.8 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.192 Amp		67.6 mm	.255 ns
M378B5273DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1240 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.192 Amp		133.35 mm	20 ns
M471A1K43CB1-CRC	Samsung	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words				1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N260							68719476736 bit
MT8JTF12864HZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4800 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			800 MHz		Not Qualified	8589934592 bit			e3			.096 Amp			.225 ns
MT8KTF51264AZ-1G9P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		2.7 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
M378B5773DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.096 Amp		133.35 mm	20 ns
MT16LD464AG-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1920 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V	8.89 mm		25.4 mm	Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp		133.35 mm	60 ns
MTA18ASF1G72HZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA18ASF2G72PDZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
M378B5773CH0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.096 Amp		133.35 mm	.255 ns
M378T2863DZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V	4 mm	333 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260			133.35 mm	.45 ns
MT8JTF25664AZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3080 mA	268435456 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	17179869184 bit						.096 Amp
MTA16ATF2G64AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF4G64HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES				64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	95 Cel		4GX64	4G	0 Cel		DUAL	1	R-XDMA-N260			30.15 mm		3.7 mm		274877906944 bit		AUTO REFRESH AND SELF REFRESH; WIDTH MAX						69.6 mm
MTA18ASF2G72AZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72AZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264AZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
M378B5273CH0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH			260	.192 Amp		133.35 mm	.255 ns
M378B5673EH1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1640 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V		533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.16 Amp			.3 ns
M378B5673EH1-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V		667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.16 Amp			.255 ns
M378T2863QZS-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260				.4 ns
M378T5663QZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2280 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp			.4 ns
M386A8K40BM1-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			8GX72	8G			DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
M392B2G70BM0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3890 mA	2147483648 words			COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	154618822656 bit									.255 ns
M471A1K43DB1-CTD	Samsung	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words				1.2		64	MICROELECTRONIC ASSEMBLY	DIMM260,20		.5 mm	85 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N260			30 mm	1333 MHz	3.7 mm		68719476736 bit		WD-MAX; SEATED HGT-NOM						69.6 mm
M471A2K43BB1-CRC	Samsung	DDR DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.5 mm			2GX64	2G			DUAL	1	R-XDMA-N260		1.26 V	30.15 mm		3.7 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
M471B2873FHS-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				95 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH							.255 ns
M471B5273CH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1960 mA	268435456 words		YES	COMMON	1.5	1.5	8	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH			260	.192 Amp		67.6 mm	.25 ns
MT16JSF25664HY-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4	30	260
MT36HTF51272PZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5160 mA	536870912 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.252 Amp		133.35 mm	.4 ns
MT8KTF51264HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	536870912 words			COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	34359738368 bit						.144 Amp
MTA18ADF2G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA72ASS16G72PSZ-3S2B1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words			COMMON	1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		16GX72	16G	0 Cel		DUAL		R-XDMA-N288				1600 MHz			1236950581248 bit
MTA8ATF1G64AZ-2G6E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	2.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA8ATF2G64AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1336 mA	2147483648 words		YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY				95 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288			31.25 mm	1600 MHz			137438953472 bit		AUTO/SELF REFRESH				.304 Amp		133.35 mm
EBJ40UG8EFU5-GNL-F	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
KMM366S403CTL-G0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V	25.4 mm	100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.016 Amp			8 ns
KMM466S823CT3-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V	26.67 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			7 ns
M368L2923DUN-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3560 mA	134217728 words		YES	COMMON	2.6	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N184	3	2.7 V	3.67 mm	200 MHz	31.75 mm	Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH			260	.08 Amp		133.35 mm	.65 ns
M368L3223FTN-CCC	Samsung	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2800 mA	33554432 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N184	1	2.7 V		200 MHz		Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH							.65 ns
M378A1K43CB2-CRC	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			1GX64	1G			DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1200 MHz	2.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.144 Amp	4,8	133.35 mm
M378A2K43DB1-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1624 mA	2147483648 words	8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm	95 Cel	3-STATE	2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.25 mm	1333 MHz	3.9 mm		137438953472 bit	1.14 V					.464 Amp	8	133.35 mm
M378A5143DB0-CPB	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1180 mA	536870912 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	DRAMs		85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1066 MHz	2.7 mm	Not Qualified	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.06 Amp		133.35 mm	.18 ns
M378B5673FH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH			260	.16 Amp		133.35 mm	20 ns
M378T2863RZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	134217728 words		YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V	30 mm	333 MHz	4 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX			260			133.35 mm	.45 ns
M378T5263AZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3280 mA	536870912 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp			.4 ns
M378T5663RZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	268435456 words		YES	COMMON	1.8	1.8	8	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V	30 mm	400 MHz	2.7 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX			260	.24 Amp		133.35 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.