DIMM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TM4SP64KPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	860 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz	Not Qualified	268435456 bit	3 V			.008 Amp		9 ns
TM2FJ64DPN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		70 ns
TM4EP72CPB-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1440 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.018 Amp		70 ns
TM8SK64KPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	200 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.001 Amp		7 ns
TM4EP72DPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	1098 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	CAS BEFORE RAS REFRESH		.018 Amp		13 ns
TM4EP72CPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1800 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.018 Amp	133.35 mm	50 ns
TM2SR72EPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	130 mA	2097152 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel	3-STATE	2MX72	2M	3 V	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz	Not Qualified	150994944 bit	3 V	AUTO/SELF REFRESH		.002 Amp		7.5 ns
TM2SJ64EPU-12A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	155 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.63 V		83 MHz	Not Qualified	134217728 bit	3.135 V	AUTO/SELF REFRESH		.002 Amp		9 ns
TM8SR72JPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1755 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz	Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH		.018 Amp		7.5 ns
TM4EJ64NPU-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	520 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm		Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp		50 ns
TM8TT64KPN-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	165 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V		125 MHz	Not Qualified	536870912 bit	3 V			.001 Amp		6 ns
TM4SR72EPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	130 mA	4194304 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	3 V	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz	Not Qualified	301989888 bit	3 V	AUTO/SELF REFRESH		.002 Amp		7.5 ns
TM2EJ64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		60 ns
TM4EP64CPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1600 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.016 Amp	133.35 mm	50 ns
TM8FJ64KPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	444 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V			Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		60 ns
TM8SP64KPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	728 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	83.3 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.016 Amp		8 ns
TM4EP72BJB-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.018 Amp		70 ns
TM16EN64HPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		30 ns
TM2FJ64EPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		60 ns
TM2EP64DJN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	134217728 bit	3 V	CAS BEFORE RAS REFRESH		.008 Amp		18 ns
TM2EJ64EPN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	640 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		70 ns
TM4EP64BJN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1440 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm		Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.016 Amp	133.35 mm	70 ns
TM2EJ64EPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		50 ns
TM8SK64JPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	200 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	28.702 mm	100 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.001 Amp		7.5 ns
TM4EP72CPB-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.018 Amp		60 ns
TM2EP64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	134217728 bit	3 V	CAS BEFORE RAS REFRESH		.008 Amp		15 ns
TM8FJ64KPU-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	524 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V			Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		50 ns
TM2EP64DPN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	134217728 bit	3 V	CAS BEFORE RAS REFRESH		.008 Amp		18 ns
TM4EP72DJN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	918 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	CAS BEFORE RAS REFRESH		.018 Amp		15 ns
TM2SR72EPH	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		2MX72	2M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	150994944 bit	3 V	AUTO/SELF REFRESH				7.5 ns
TM2SJ64EPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		.016 Amp		7.5 ns
TM4EP64CPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1440 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.016 Amp	133.35 mm	60 ns
TM4EP72DPN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	828 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	CAS BEFORE RAS REFRESH		.018 Amp		18 ns
TM2FJ64DPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	960 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		50 ns
TM4EP64DJN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	976 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	268435456 bit	3 V	CAS BEFORE RAS REFRESH		.016 Amp		13 ns
TM4EP72BJB-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1800 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.018 Amp		60 ns
TM4EP64BJN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1600 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm		Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.016 Amp	133.35 mm	60 ns
TM2EP72DPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	990 mA	2097152 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	150994944 bit	3 V	CAS BEFORE RAS REFRESH		.009 Amp		13 ns
TM2FJ64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		60 ns
TM4TR72EPH-8	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	150 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V		125 MHz	Not Qualified	301989888 bit	3 V			.001 Amp		6 ns
TM4EP72CJN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4	.018 Amp	133.35 mm	60 ns
HYS72T128020HR-3S-B	Infineon Technologies	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY					65 Cel		128MX72	128M		0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V			Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e3			.45 ns
HYM724010GS-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M		0 Cel		DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH				60 ns
HYS64V8000GD-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	100 MHz	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.008 Amp		7 ns
HYS64V32220GU-7-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3.68 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V		133 MHz	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.024 Amp		5.4 ns
HYS72T128020HFA-3S-A	Infineon Technologies	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		8	MICROELECTRONIC ASSEMBLY							64MX8	64M			MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V			Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e3
HYS72V128320GR-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		9720 mA	134217728 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		0 Cel		DUAL		R-PDMA-N168			133 MHz	Not Qualified	9663676416 bit				.072 Amp		5.4 ns
HYS72T128020HF-3-A	Infineon Technologies	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY							128MX72	128M			MATTE TIN	DUAL	1	R-XDMA-N240	1.9 V			Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e3

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.