DIP DRAM 1,315

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM44C1004CSLP-7	Samsung	EDO DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	24.56 mm	70 ns
KM41C4000BP-6	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.02 mm	60 ns
KM44C1004CP-L6	Samsung	EDO DRAM		20	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm			1MX4	1M			DUAL	1	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V				26.4 mm	60 ns
KM41C1001AP-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
KM41C258P-10	Samsung	STATIC COLUMN DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	45 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.65 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	19.43 mm	100 ns
KM41V4000CP-L7	Samsung	FAST PAGE DRAM		20	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			3.3		1	IN-LINE			2.54 mm			4MX1	4M			DUAL	1	R-PDIP-T20		3.6 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	3 V				26.4 mm	70 ns
KM44C258BP-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	70 ns
KM44C1010AP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	95 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	80 ns
KM44C1010AP-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	100 ns
KM44C1012BP-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.56 mm	60 ns
KM41C4000BLP-6	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp	22.02 mm	60 ns
KM44C1012AP-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	105 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	70 ns
MT4C4001JC-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDIP-T20	1				Not Qualified	4194304 bit				.002 Amp		80 ns
MT4C1024C10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C4260-10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
MT4C1259C12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL	1	R-CDIP-T16		5.5 V	3.93 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.32 mm	120 ns
MT4C1006-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		100 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT1259C-15M070	Micron Technology	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0			150 ns
MT4264C-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			150 ns
MT4C4003JC-6	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		110 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	4194304 bit			e0	.001 Amp		60 ns
MT4C1024-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.095 mm	60 ns
MT4C4256-15	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		50 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0	.001 Amp		150 ns
MT4C1024-8LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0	.0002 Amp	22.095 mm	80 ns
MT4C1025-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			150 ns
MT4C4260-10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
MT1259C-12XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	262144 bit			e0			120 ns
MT4264C-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		40 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			100 ns
MT4C1026-10IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C4003JCN-7IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		100 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT4C1004JCN10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	65 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	22.86 mm	90 ns
MT4C1025-8	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			80 ns
MT4C1024-10LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	22.095 mm	100 ns
MT4C4003JC-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		100 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT4C1024C12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1048576 bit			e0	.001 Amp		120 ns
5962-8767604VA	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED		NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-GDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V					100 ns
MT1259-8XT	Micron Technology	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		65 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0			80 ns
MT4C4256-10L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	24.635 mm	100 ns
MT1259CP-12	Micron Technology	OTHER DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	262144 bit			e0			120 ns
MT4C4260-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		65 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0	.0002 Amp		80 ns
MT4C1004CN-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT1259CP-15	Micron Technology	OTHER DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	262144 bit			e0			150 ns
MT4C1024-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.095 mm	80 ns
5962-8767602VC	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-XDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				150 ns
MT4C4256C8LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		65 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	1048576 bit			e0	.0002 Amp		80 ns
MT4C4005C-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	4194304 bit			e0	.001 Amp		80 ns
5962-8767602VA	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED		NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-GDIP-T18		5.5 V			Not Qualified	262144 bit	4.5 V					150 ns
MT4C4256C10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C4260-7IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		75 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0	.0002 Amp		70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.