DIP DRAM 1,315

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
5962-01-271-5534	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	262144 bit						120 ns
5962-8767603VA	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED		NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		4	IN-LINE				110 Cel		64KX4	64K	-55 Cel		DUAL	1	R-GDIP-T18	5.5 V			Not Qualified	262144 bit	4.5 V					200 ns
MT4C1024-7LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0	.0002 Amp	22.095 mm	70 ns
MT4C4258-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.635 mm	80 ns
MT1259C-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			100 ns
MT1259P-10	Micron Technology	OTHER DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	262144 bit			e0			100 ns
MT42C4256C-8	Micron Technology	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE			262144 words			5	5	4	IN-LINE	DIP28(UNSPEC)	Other Memory ICs		70 Cel		256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C4001-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		100 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT4C4260C-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		65 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.0002 Amp		80 ns
MT42C4256C-10	Micron Technology	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE			262144 words			5	5	4	IN-LINE	DIP28(UNSPEC)	Other Memory ICs		70 Cel		256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C1006C-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	DIP18,.4	SRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT4C1006CN-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT4C4003JCN-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		100 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT4C1004C-12	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		60 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.0005 Amp		120 ns
MT4C1024-15	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			150 ns
MT4C4003JC-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT1259P-12	Micron Technology	OTHER DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	262144 bit			e0			120 ns
MT4C4256C12M070	Micron Technology	FAST PAGE DRAM	OTHER	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		50 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT4C4256-10LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	24.635 mm	100 ns
MT4C1026-8IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C1024C10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C4258-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.635 mm	70 ns
MT4C1006CN-6	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		110 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4194304 bit			e0	.001 Amp		60 ns
MT4C1024C8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C4005C-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT4C4256-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.635 mm	70 ns
MT42C4256C-15/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	CERAMIC		NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		115 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28				Not Qualified	1048576 bit			e0	.01 Amp		150 ns
MT4C4256-6LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0	.0002 Amp	24.635 mm	60 ns
MT4C4256C15	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		50 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		150 ns
MT4C4258-8IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4264C-15XT	Micron Technology	PAGE MODE DRAM	MILITARY	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			150 ns
MT4C1025-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			120 ns
MT4C4256C10L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
MT4C1026-7IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		70 ns
MT4C4001JCN8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT4C4005C-8JIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
MT1259C-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			120 ns
MT1259C-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			200 ns
MT4C4256C10M070	Micron Technology	FAST PAGE DRAM	OTHER	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		50 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX4	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C1026-10	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.095 mm	100 ns
MT4C1006-10	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		85 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	4194304 bit			e0	.001 Amp		100 ns
MT1259-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			80 ns
MT4C4260C-10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
MT4C4005C-7JIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		100 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT1259CP-10	Micron Technology	OTHER DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	262144 bit			e0			100 ns
MT4C1024LC7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0	.0002 Amp		70 ns
MT4C1024-7L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.32 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0	.0002 Amp	22.095 mm	70 ns
MT4C1024LC10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0	.0002 Amp		100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.