LBGA DRAM 39

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC59RM718GB-8	Toshiba	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		18	GRID ARRAY, LOW PROFILE			1.27 mm			8MX18	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.3 mm		11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH						12.92 mm
TC59RM716GB-8	Toshiba	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54		2.63 V	1.3 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0					12.92 mm
TC59RM718GB-6	Toshiba	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		18	GRID ARRAY, LOW PROFILE			1.27 mm			8MX18	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.3 mm		11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH						12.92 mm
UPD48011436FF-FH12-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	800 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
UPD48011336FF-FH16-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	600 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
UPD48011318FF-FH16-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	600 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
UPD48011418FF-FH12-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	800 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
RMHE41A364AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm			32MX36	32M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
RMHE41A184AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40		1 mm			64MX18	64M			BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
RMHE41A184AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40		1 mm			64MX18	64M			BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
UPD48011336FF-FH19-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	525 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
RMHE41A364AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm			32MX36	32M			BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH					4	18.5 mm
UPD48011418FF-FH15-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	667 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
UPD48011318FF-FH19-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2		COMMON	1.5	1.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	64MX18	64M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	525 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
UPD48011436FF-FH15-FF1-A	Renesas Electronics	DDR3 DRAM		180	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4		COMMON	1.5	1.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA180,13X18,40	DRAMs	1 mm		3-STATE	32MX36	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B180		1.605 V	1.374 mm	667 MHz	14 mm	Not Qualified	1207959552 bit	1.395 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6					18.5 mm
K4R271669D-RCS80	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		11.8 mm		134217728 bit	2.37 V	SELF REFRESH; TERM PITCH-MAX						12 mm
K4R271669E-TCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M			BOTTOM	1	R-PBGA-B54	3	2.63 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH			260			12 mm
K4R271669F-RCS80	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH		30	240			12 mm
K4R271669D-TCS80	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		11.8 mm		134217728 bit	2.37 V	SELF REFRESH; TERM PITCH-MAX						12 mm
K4R271669D-TCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	2.63 V	1.25 mm	400 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e1		260			12 mm
K4R271669A-SCM8	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH						12 mm	40 ns
K4R271669E-TCS80	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		12 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH						11.8 mm
K4R271669B-SCK8	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH						12 mm
K4R271669A-SCK8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0					12 mm	45 ns
KM416RD8AS-RM80	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-CBGA-B54		2.7 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.5 V		e0					12 mm
KM416RD8AS-SM80	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-CBGA-B54		2.7 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.5 V		e0					12 mm
K4R271669E-RCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0					12 mm
K4R271669D-RCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	400 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0					12 mm
K4R271669F-TCS80	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	2	2.63 V	1.25 mm		11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e1					12 mm
K4R271669E-RCS80	Samsung	RAMBUS DRAM		54	LBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, LOW PROFILE			1.27 mm			8MX16	8M			BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm		12 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH						11.8 mm
MT44K64M18RCT-125E:A	Micron Technology	DDR DRAM	COMMERCIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2610 mA	67108864 words	2,4,8		COMMON	1.35	1.35	18	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	70 Cel	3-STATE	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4,8	13.5 mm	.1 ns
MT44K64M18RCT-125EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2610 mA	67108864 words	2,4,8		COMMON	1.35	1.35	18	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	85 Cel	3-STATE	64MX18	64M	-40 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4,8	13.5 mm	.1 ns
MT44K32M36RCT-125IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	3770 mA	33554432 words	2,4		COMMON	1.35	1.35	36	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	85 Cel	3-STATE	32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4	13.5 mm	.1 ns
MT44K32M36RCT-125E:A	Micron Technology	DDR DRAM	COMMERCIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	3770 mA	33554432 words	2,4		COMMON	1.35	1.35	36	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	70 Cel	3-STATE	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4	13.5 mm	.1 ns
MT44K32M36RCT-107E:A	Micron Technology	DDR DRAM		168	LBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, LOW PROFILE			1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168			1.45 mm		13.5 mm		1207959552 bit		AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RCT-125:A	Micron Technology	DDR DRAM	COMMERCIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2610 mA	67108864 words	2,4,8		COMMON	1.35	1.35	18	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	70 Cel	3-STATE	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4,8	13.5 mm	.1 ns
MT44K32M36RCT-125EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	3770 mA	33554432 words	2,4		COMMON	1.35	1.35	36	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	85 Cel	3-STATE	32MX36	32M	-40 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4	13.5 mm	.1 ns
MT44K32M36RCT-125:A	Micron Technology	DDR DRAM	COMMERCIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	3770 mA	33554432 words	2,4		COMMON	1.35	1.35	36	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	70 Cel	3-STATE	32MX36	32M	0 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4	13.5 mm	.1 ns
MT44K64M18RCT-125IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	LBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2610 mA	67108864 words	2,4,8		COMMON	1.35	1.35	18	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	85 Cel	3-STATE	64MX18	64M	-40 Cel		BOTTOM	1	S-PBGA-B168			1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4,8	13.5 mm	.1 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.