TFBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4S51163LF-PL1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					11.5 mm	7 ns
K4S51153PF-PF750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	1.95 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	6 ns
K4B4G0446Q-HYH90	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY						11 mm
K4R571669D-FCK80	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH						15.1 mm
K4N56163QG-GC2A0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	370 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	350 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0			.01 Amp	4,8	13 mm	.45 ns
K4B4G0446A-HYK00	Samsung	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	1073741824 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	10 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH			260	.015 Amp	8	12.5 mm	.25 ns
K4M51163LE-PF800	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						11.5 mm	6 ns
K4B8G1646Q-MYK00	Samsung	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		11 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY						13.3 mm
K4M511533E-YF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						11.5 mm	7 ns
K4B2G0846Q-BIH90	Samsung	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B4G0446E-BYK00	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						11 mm
K4N51163QC-GC2A0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	350 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		30	240	.01 Amp	4,8	13 mm	.45 ns
K4H511638G-LB300	Samsung	DDR1 DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	70 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		9 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.6 ns
K4B8G1646D-MCNB0	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm
K4T1G084QR-HCE6T	Samsung	CACHE DRAM MODULE	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	265 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	333 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	11 mm	.45 ns
K4H561638H-ZCB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	2,4,8	14 mm	.7 ns
K4S56163LF-ZF750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						11 mm	5.4 ns
K4J52324KI-HC140	Samsung	DDR3 DRAM		136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		1	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX1	512M			BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.26 ns
K4T51043QB-GCE60	Samsung	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	.45 ns
K4R881869A-FCT9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92	1	2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH						18 mm
K4S51153PF-YF900	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		30	240			11.5 mm	7 ns
K4T1G164QQ-HCE60	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	245 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	4,8	13 mm	.45 ns
K4T1G084QE-HCF80	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	533 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	9.5 mm	.35 ns
K4J52324QC-BJ120	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.23 ns
K4B4G0846D-BCK00	Samsung	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4T51163QG-HLD50	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	235 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	267 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0045 Amp	4,8	12.5 mm	.5 ns
K4T1G084QD-ZLCC0	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	200 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	11 mm	.6 ns
K4S511633F-YF750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH		30	240			11.5 mm	5.4 ns
K4T1G044QE-HCF70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	9.5 mm	.4 ns
K4T51163QG-HCCC0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	200 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	12.5 mm	.6 ns
K4T51163QE-ZCE70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.008 Amp	4,8	13 mm	.4 ns
K4R881869D-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					15.1 mm	45 ns
K4H510438G-LB300	Samsung	DDR1 DRAM	COMMERCIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	70 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		9 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.6 ns
K4S563233F-HE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4T51163QB-GLE60	Samsung	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M		TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm	.45 ns
K4T51043QC-ZCCC0	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.008 Amp	4,8	11 mm	.6 ns
K4B4G0446D-BYK00	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY						11 mm
K4N56163QF-GC360	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	275 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	13 mm	.5 ns
K4Y50164UE-JCB30	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	1150 mA	33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	35 ns
K4N56163QF-ZC370	Samsung	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	.5 ns
K4T56043QF-GCD5	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0			.008 Amp	4,8	13 mm	.5 ns
K4H560438H-ZLB30	Samsung	DDR1 DRAM	COMMERCIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1			.003 Amp	2,4,8	14 mm	.7 ns
K4T51163QC-ZLD60	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	.45 ns
K4W1G1646E-HC110	Samsung	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	900 MHz	7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH			260		4,8	13.3 mm	.195 ns
K4T51163QC-ZLE70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	13 mm	.4 ns
K4M51153LE-YF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						11.5 mm	7 ns
K4S56163PF-BF900	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	1.95 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						11 mm	7 ns
K4M51153LE-YL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						11.5 mm	7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.