TFBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4M511633E-YF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						11.5 mm	7 ns
K4T1G084QQ-HLE60	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	11 mm	.45 ns
K4B8G0846D-MYMA0	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						11 mm
K4W2G1646C-HC110	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		128MX16	128M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm	.195 ns
K4S56323LF-HR1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4R761869A-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			32MX18	32M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		13.4 mm	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH						15.1 mm
K4T51163QE-HDE60	Samsung	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
K4A8G085WB-BCRC0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						11 mm
K4T51163QI-HIE70	Samsung	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns
K4T1G164QQ-HCE70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	265 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	4,8	13 mm	.4 ns
K4S641633D-GN1H	Samsung	SYNCHRONOUS DRAM	OTHER	52	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA52,6X13,30		DRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B52		3.3 V	1.1 mm	100 MHz	6.6 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	11 mm	6 ns
K4T1G044QQ-HLE60	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	11 mm	.45 ns
K4J55323QI-BC140	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	925 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm	700 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.085 Amp	4,8	14 mm	.26 ns
K4S563233F-HC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4T1G044QQ-HCD60	Samsung	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						11 mm	.45 ns
K4S563233F-FL1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		3		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4T2G044QM-ZCD50	Samsung	DDR2 DRAM	OTHER	68	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA68,9X19,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1		260		4,8	21.7 mm	.5 ns
K4S56163PF-RG750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11 mm	6 ns
K4S56323PF-FF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	7 ns
K4T2G084QA-HYE60	Samsung	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.55		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			256MX8	256M			BOTTOM	1	R-PBGA-B68		1.6 V	1.2 mm		11 mm	Not Qualified	2147483648 bit	1.5 V	AUTO/SELF REFRESH						18 mm	.45 ns
K4T56083QF-ZCD5	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	255 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel	3-STATE	32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	267 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.008 Amp	4,8	13 mm	.5 ns
K4W1G1646D-EJ12T	Samsung	CACHE DRAM MODULE	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B100	3	1.9 V	1.2 mm	800 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	13.3 mm
K4R881869A-FCN90	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH						18 mm
K4T1G164QE-HCF70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	200 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	12.5 mm	.4 ns
K4B4G1646D-BMH90	Samsung	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX16	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	PROGRAMMABLE CAS LATENCY; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	NOT SPECIFIED	NOT SPECIFIED			13.3 mm
K4H560438J-HLCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.6	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X12,40/32		DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	2,4,8	14 mm	.65 ns
K4A8G045WC-BCTD0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						11 mm
K4W1G1646E-HC1A0	Samsung	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	1000 MHz	7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH			260		4,8	13.3 mm	.18 ns
K4S56163LF-ZF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						11 mm	7 ns
KM416RD4C-M80	Samsung	RAMBUS DRAM		74	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm			4MX16	4M			BOTTOM	1	R-PBGA-B74		2.63 V	1.2 mm		7.6 mm	Not Qualified	67108864 bit	2.37 V	SELF REFRESH						12.6 mm
K4M511533E-PL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						11.5 mm	5.4 ns
K4R571669D-FCK8	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32		DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	800 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0					15.1 mm	45 ns
K4T1G164QD-ZLE60	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	255 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	13 mm	.45 ns
K4B4G0846D-BYH90	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY						11 mm
K4T1G044QE-HLE60	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY	BGA60,9X11,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	9.5 mm	.45 ns
K4B4G0446A-HYH90	Samsung	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	1073741824 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	667 MHz	10 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH			260	.015 Amp	8	12.5 mm	.3 ns
K4R881869D-FCT9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32		DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					15.1 mm	32 ns
K4T1G084QE-HLE6	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	155 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	MATTE TIN	BOTTOM	1	R-PBGA-B60	1	1.9 V	1.2 mm	333 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e3				4,8	9.5 mm	.45 ns
K4S561633F-ZG1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						11 mm	7 ns
K4R881869D-FCM80	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		18	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			16MX18	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH						15.1 mm
K4T51043QG-HCE60	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	175 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	333 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.008 Amp	4,8	9.5 mm	.45 ns
K4T1G164QQ-HPE60	Samsung	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	245 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	13 mm	.45 ns
K4T1G044QQ-HLD60	Samsung	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						11 mm	.45 ns
K4B2G1646F-BMMA0	Samsung	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm
KM416RD4C-G60	Samsung	RAMBUS DRAM		74	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm			4MX16	4M			BOTTOM	1	R-PBGA-B74		2.63 V	1.2 mm		7.6 mm	Not Qualified	67108864 bit	2.37 V	SELF REFRESH						12.6 mm
K4H560438J-HLB30	Samsung	DDR1 DRAM	COMMERCIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X12,40/32		DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	2,4,8	14 mm	.7 ns
K4M51153LE-PF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						11.5 mm	7 ns
K4B2G0446C-HYF70	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	95 Cel		512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.