TFBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4T51163QG-HID50	Samsung	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	235 mA	33554432 words	4,8	YES	COMMON	1.8		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	267 MHz	7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			260	.008 Amp	4,8	12.5 mm	.5 ns
K4B4G1646D-BCK00	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm	.225 ns
K4B4G1646D-BCNB0	Samsung	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm	.18 ns
K4B2G0846B-HCF70	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	268435456 words	8	YES	COMMON	1.5		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	400 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.012 Amp	8	11.5 mm	.4 ns
K524G2GACB-A050	Samsung	DDR1 DRAM	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	25 mA	67108864 words		YES		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel		64MX16	64M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B137		1.95 V	1.2 mm		10.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.002 Amp		13 mm	5.5 ns
K4R571669A-FCM80	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M			BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm		9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH						15.1 mm
K4B2G0846F-BMMA0	Samsung	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY						11 mm
K4T1G164QE-HCF7	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	200 mA	67108864 words	4,8	YES	COMMON	1.8		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.01 Amp	4,8	12.5 mm	.4 ns
K4T56043QG-ZCCC0	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	67108864 words	4,8	YES	COMMON	1.8		1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	200 MHz	9 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	4,8	11 mm	.6 ns
K4T51043QC-ZCE70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	134217728 words	4,8	YES	COMMON	1.8		1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	1.9 V	1.2 mm	400 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.008 Amp	4,8	11 mm	.4 ns
K4B4G0446A-HCF80	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.5			4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		10 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						12.5 mm
K4T56163QI-ZCLCC	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
K4R571669D-FCN9	Samsung	RAMBUS DRAM		92	TFBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5		1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,10X18,32	DRAMs	.8 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B92		2.63 V	1.08 mm	1066 MHz	9.3 mm	Not Qualified	268435456 bit	2.37 V	SELF CONTAINED REFRESH	e0					15.1 mm	32 ns
K4U52324QE-BC090	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1130 mA	16777216 words	8	YES	COMMON	1.8		1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.89 V	1.2 mm	1100 MHz	11 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.116 Amp	8	14 mm	.2 ns
K4S561633F-ZN1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						11 mm	7 ns
K4H511638F-HI/PB3	Samsung	DDR1 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						14 mm	.7 ns
K4A4G085WE-BCRC0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						11 mm
K4B1G0846F-HCF80	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	145 mA	134217728 words	8	YES	COMMON	1.5		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	533 MHz	7.5 mm	Not Qualified	1073741824 bit	1.425 V	RAS ONLY/SELF REFRESH	e1		260		8	11 mm	.3 ns
K4S28323LE-HC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233F-HL750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4B1G0846G-BYH90	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY						11 mm
K4S28323LF-FN1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4S283233E-FE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S28323LE-FN750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S283233F-FF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4S28323LF-FC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
K4B1G1646G-BIH90	Samsung	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M			BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13.3 mm
K4S283233F-FG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4S28323LF-HE750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4B1G0846D-HCH90	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	134217728 words	8	YES	COMMON	1.5		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.255 ns
K4S283233F-FE600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
K4B1G0446D-HCH9	Samsung	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	268435456 words	8	YES	COMMON	1.5		1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260		8	11 mm	.255 ns
K4B1G1646E-HPH90	Samsung	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm	.255 ns
K4B1G0846C-ZCF80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.3 ns
K4A4G045WD-BCPB0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2			4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						11 mm
K4S283233F-FE1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4S28323LF-FL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4A4G085WE-BIPB0	Samsung	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11 mm
K4B1G0446E-HCF70	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	268435456 words	4,8	YES	COMMON	1.5		1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH			260		4,8	11 mm	.4 ns
K4A4G085WE-BCTD0	Samsung	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						11 mm
K4S283233E-FC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S283233F-FG600	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
K4S283233E-FG1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233F-FG750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	6 ns
K4S283233F-HG750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
K4B1G1646C-ZCH90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	8	YES	COMMON	1.5		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.255 ns
K4S28323LF-FC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4S28323LF-FR750	Samsung	SYNCHRONOUS DRAM	OTHER	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.