SQUARE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
CBTV4020EE/G	NXP Semiconductors	DDR1 DRAM		72			SQUARE	PLASTIC/EPOXY		YES			GULL WING										SMALL OUTLINE										DUAL		S-PDSO-G72						Not Qualified
HYB39M83200L-133	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND			262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				133 MHz		Not Qualified	8388608 bit			e0
HYB18T256321F-22	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1				11 mm	.45 ns
HYB18T256324F-22	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH					11 mm	.45 ns
HYB18T256321F-20	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1				11 mm	.4 ns
HYB39M93200L100	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				100 MHz		Not Qualified	9437184 bit			e0		.001 Amp
HYB39M83200L-100	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				100 MHz		Not Qualified	8388608 bit			e0		.001 Amp
HYB18T256324FL22	Infineon Technologies	DDR3 DRAM		144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			8MX32	8M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1				11 mm	.45 ns
HYB39M93200L125	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				125 MHz		Not Qualified	9437184 bit			e0		.001 Amp
HYB39M83200L-150	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND			262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				150 MHz		Not Qualified	8388608 bit			e0
HYB18T256324F-20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH					11 mm	.4 ns
HYB39M93200L120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND			294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				125 MHz		Not Qualified	9437184 bit			e0
HYB18T256324FL25	Infineon Technologies	DDR3 DRAM		144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			8MX32	8M			BOTTOM	1	S-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH					11 mm	.5 ns
HYB39M83200L-120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND			262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				125 MHz		Not Qualified	8388608 bit			e0
HYB39M93200L133	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND			294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				133 MHz		Not Qualified	9437184 bit			e0
HYB39M93200L166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				166 MHz		Not Qualified	9437184 bit			e0		.001 Amp
HYB39M93200L150	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND			294912 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				150 MHz		Not Qualified	9437184 bit			e0
HYB18T256324F-16	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH					11 mm	.4 ns
HYB39M83200L-166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				166 MHz		Not Qualified	8388608 bit			e0		.001 Amp
HYB39M83200L125	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY		YES		CMOS	J BEND		195 mA	262144 words			COMMON	3.3	3.3	32	CHIP CARRIER	LDCC68,1.0SQ	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				125 MHz		Not Qualified	8388608 bit			e0		.001 Amp
HYB18T256321F-25	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1				11 mm	.5 ns
SDA9253	Infineon Technologies	VIDEO DRAM	COMMERCIAL	64	QFP		SQUARE	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	217088 words				5	5	12	FLATPACK	QFP64,.66SQ,32	Other Memory ICs	.8 mm	70 Cel		212KX12	212K	0 Cel	TIN LEAD	QUAD	3	S-PQFP-G64		5.5 V	2.45 mm		14 mm	Not Qualified	2605056 bit	4.5 V	16 X 12 SAM PORT	e0		.005 Amp		14 mm	25 ns
SDA9254-2	Infineon Technologies	VIDEO DRAM	COMMERCIAL	64	QFP		SQUARE	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	217088 words				5	5	12	FLATPACK	QFP64,.66SQ,32	Other Memory ICs	.8 mm	70 Cel		212KX12	212K	0 Cel	TIN LEAD	QUAD	3	S-PQFP-G64		5.5 V	2.45 mm		14 mm	Not Qualified	2605056 bit	4.5 V	16 X 12 SAM PORT	e0		.005 Amp		14 mm	25 ns
HYB25D128323C-3.3	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128		2.9 V	1.5 mm	300 MHz	11 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e0		.06 Amp	2,4,8	11 mm	.5 ns
HYB25D128323CL4.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	S-PBGA-B128		2.63 V	1.5 mm	222 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0			2,4,8	11 mm	.7 ns
HYB25D128323C-3	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	430 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128		2.9 V	1.5 mm	333 MHz	11 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e0		.065 Amp	2,4,8	11 mm	.5 ns
HYB25D128323C-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128		2.63 V	1.5 mm	200 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0		.05 Amp	2,4,8	11 mm	.7 ns
HYB25D128323C-4.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128		2.63 V	1.5 mm	222 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0		.05 Amp	2,4,8	11 mm	.7 ns
HYB25D128323C-3.6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	370 mA	4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B128		2.63 V	1.5 mm	278 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0		.055 Amp	2,4,8	11 mm	.55 ns
HYB25D128323CL3.6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	128	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	S-PBGA-B128		2.63 V	1.5 mm	278 MHz	11 mm	Not Qualified	134217728 bit	2.38 V	AUTO/SELF REFRESH	e0			2,4,8	11 mm	.55 ns
S80KS2564GACHI040	Infineon Technologies	HYPERRAM		49	VBGA		SQUARE	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS	22 mA	16777216 words		YES	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE	BGA49,7X7,20		1 mm	85 Cel		16MX16	16M	-40 Cel		BOTTOM	1	S-PBGA-B49	3	2 V	1 mm	200 MHz	8 mm		268435456 bit	1.7 V	SELF REFRESH			.0012 Amp		8 mm	35 ns
TC59YM816BKG40B	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG32A	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG32C	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG24A	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG40C	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG32B	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
UPD42S16100Q-110	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0002 Amp			110 ns
UPD4216100Q-100	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0025 Amp			100 ns
UPD42S16100Q-85	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0002 Amp			85 ns
UPD42S16100Q-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0002 Amp			70 ns
UPD4216100Q-110	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0025 Amp			110 ns
UPD4216100Q-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0025 Amp			70 ns
UPD42S16100Q-100	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0002 Amp			100 ns
UPD4216100Q-85	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28						Not Qualified	16777216 bit			e0		.0025 Amp			85 ns
K4N26323AE-GC20	Samsung	GDDR2 DRAM		144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1400 mA	4194304 words	4	YES	COMMON	2.5	1.8,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm		3-STATE	4MX32	4M		TIN LEAD	BOTTOM	1	S-PBGA-B144		2.6 V	1.4 mm	500 MHz	13 mm	Not Qualified	134217728 bit	2.4 V	AUTO/SELF REFRESH	e0		.11 Amp		13 mm	.35 ns
K4D263238K-FC50	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		344 mA	4194304 words	2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B144	3			200 MHz		Not Qualified	134217728 bit			e1	260	.02 Amp	2,4,8		.7 ns
K4M641633K-BL1HT	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	MATTE TIN	BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	67108864 bit			e3		.0005 Amp	1,2,4,8		7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.