16384 DRAM 192

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM416RD8AS-RM80	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-CBGA-B54		2.7 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.5 V		e0				12 mm
KM416RD8AS-SM80	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-CBGA-B54		2.7 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.5 V		e0				12 mm
KM416RD8C-SK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0				13.15 mm
KM418RD8AD-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	53.3 ns
K4R271669B-MCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
K4Y54084UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	32MX8	32M			BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit					.34 Amp			53.6 ns
MD16R1624EG0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1390 mA	33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40		DRAMs	1 mm			3-STATE	32MX32	32M			DUAL	1	R-XDMA-N232		2.63 V				Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH			1.1 Amp			40 ns
KM418RD8AD-SG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0				12 mm	53.3 ns
K4R441869A-NCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
KM418RD8C-SM80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0				13.15 mm
K4R441869A-MCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R271669B-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R271669A-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R271669E-RCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm
K4R271669H-DCS80	Samsung	RAMBUS DRAM		54	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M			BOTTOM	1	R-PBGA-B54	3	2.63 V	1.2 mm	400 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH		260			12 mm	45 ns
K4R271669D-RCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	400 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm
K4R441869A-NCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	53.3 ns
KM416RD8C-RM80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0				13.15 mm
K4R271669B-MCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R271669H-DCS8T	Samsung	RAMBUS DRAM		54	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M			BOTTOM	1	R-PBGA-B54	3	2.63 V	1.2 mm	400 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH		260			12 mm	45 ns
KM418RD8C-SK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0				13.15 mm
MD16R1628EG0-CT9	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2360 mA	67108864 words		YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40		DRAMs	1 mm			3-STATE	64MX32	64M			DUAL	1	R-XDMA-N232		2.63 V				Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH			1.404 Amp			32 ns
KM416RD8AD-SK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0				12 mm	45 ns
KM416RD8AC-RK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
KM416RD8C-SG60	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0				13.15 mm
K4R271669A-NCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
K4R441869A-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
KM416RD8AC-SK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0				12 mm	45 ns
K4Y54164UF-JCC3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit					.34 Amp			53.6 ns
K4R441869B-MCG6T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	150994944 bit			e0
KM418RD8AD-RK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	45 ns
KM416RD8AD-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0				12 mm	53.3 ns
K4Y54164UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	16777216 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	16MX16	16M			BOTTOM		R-PBGA-B104						Not Qualified	268435456 bit					.34 Amp			53.6 ns
EDW2032BABG-40-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel		3-STATE	64MX32	64M	0 Cel		BOTTOM		R-PBGA-B170						Not Qualified	2147483648 bit						8
EDW2032BABG-50-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel		3-STATE	64MX32	64M	0 Cel		BOTTOM		R-PBGA-B170						Not Qualified	2147483648 bit						8
EBE51ED8ABFA-5C	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	16384	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel		3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N240				267 MHz		Not Qualified	4831838208 bit								.5 ns
EBE51ED8ABFA-4A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	16384	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel		3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	4831838208 bit								.6 ns
MT49H16M36TR-18:B	Micron Technology	RLDRAM		144	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	885 mA	16777216 words	2,4,8	YES	COMMON	1.8		36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32			1 mm	95 Cel		3-STATE	16MX36	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	533 MHz	11 mm		603979776 bit	1.7 V	AUTO REFRESH			.25 Amp	2,4,8	18.5 mm
EDW2032BABG-60-F	Micron Technology	DDR5 DRAM	OTHER	170	FBGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	8		COMMON		1.35/1.5	32	GRID ARRAY, FINE PITCH	BGA170,14X17,32	16	DRAMs	.8 mm	95 Cel		3-STATE	64MX32	64M	0 Cel		BOTTOM		R-PBGA-B170						Not Qualified	2147483648 bit						8
MT53B256M32D1NP-062AUT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	445 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	125 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.005 Amp	16,32	14.5 mm
MT53B512M32D2DS-062AAT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	105 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0033 Amp	16,32	14.5 mm
MT53B512M32D2DS-062AIT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0025 Amp	16,32	14.5 mm
MT53B256M32D1DS-062AUT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	445 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	125 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.005 Amp	16,32	14.5 mm
MT53B512M32D2NP-062AAT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	105 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0033 Amp	16,32	14.5 mm
MT53B256M32D1NP-062AAT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	105 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0033 Amp	16,32	14.5 mm
MT53B256M32D1DS-062AIT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	95 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0025 Amp	16,32	14.5 mm
MT53B512M32D2NP-062AIT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0025 Amp	16,32	14.5 mm
MT53B256M32D1NP-062AIT:C	Micron Technology	LPDDR4 DRAM		200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	95 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX			.0025 Amp	16,32	14.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.