16384 DRAM 192

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC59YM816BKG40C	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M		DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG32B	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	16MX16	16M		DUAL	1	R-XDMA-N240		1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
UPD488448FB-C60-53-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
UPD488488FB-C71-45-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
RMHE41A364AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm			32MX36	32M		BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH			4	18.5 mm
RMHE41A184AGBG-120#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40		1 mm			64MX18	64M		BOTTOM	1	R-PBGA-B180	3	1.605 V	1.35 mm	800 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH			4	18.5 mm
UPD488448FF-C60-53-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
RMHE41A184AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4	YES	COMMON			18	GRID ARRAY	BGA180,10X18,40		1 mm			64MX18	64M		BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH			4	18.5 mm
UPD488488FB-C80-45-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	150994944 bit			e0
UPD488488FB-C60-53-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	150994944 bit			e0
UPD488448FF-C80-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488448FF-C71-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
RMHE41A364AGBG-150#AC0	Renesas Electronics	DDR3 DRAM	OTHER	180	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4	YES	COMMON			36	GRID ARRAY	BGA180,10X18,40		1 mm			32MX36	32M		BOTTOM	1	R-PBGA-B180		1.605 V	1.35 mm	667 MHz	14 mm		1181116006 bit	1.395 V	AUTO/SELF REFRESH			4	18.5 mm
UPD488488FB-C60-53-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	150994944 bit			e0
UPD488448FB-C71-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
UPD488448FF-C80-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C80-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C80-45-DQ2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	134217728 bit			e0
UPD488448FF-C71-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C60-53-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
UPD488488FB-C80-45-DP1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				800 MHz		Not Qualified	150994944 bit			e0
UPD488488FB-C71-45-DP2	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
UPD488448FF-C60-53-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				600 MHz		Not Qualified	134217728 bit			e0
UPD488448FB-C71-45-DQ1	Renesas Electronics	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
K4Y54084UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX8	32M		BOTTOM		R-PBGA-B104				300 MHz		Not Qualified	268435456 bit				.34 Amp			53.6 ns
KM418RD8C-RG60	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0			13.15 mm
KM418RD8C-RK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0			13.15 mm
K4R441869B-MCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	18	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	150994944 bit			e0
MD16R1624EG0-CN1	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1900 mA	33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V				Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH		1.558 Amp			32 ns
K4R441869B-NCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
K4R441869B-MCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
K4Y54044UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	64MX4	64M		BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit				.34 Amp			53.6 ns
KM416RD8AC-RK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4Y54044UF-JCA2	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	67108864 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	64MX4	64M		BOTTOM		R-PBGA-B104				300 MHz		Not Qualified	268435456 bit				.34 Amp			53.6 ns
KM416RD8AS-RM80	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-CBGA-B54		2.7 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.5 V		e0			12 mm
KM416RD8AS-SM80	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-CBGA-B54		2.7 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.5 V		e0			12 mm
KM416RD8C-SK80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	11.5 mm	Not Qualified	134217728 bit	2.37 V	SELF REFRESH	e0			13.15 mm
KM418RD8AD-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
K4R271669B-MCK7T	Samsung	RAMBUS DRAM		62	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B62				711 MHz		Not Qualified	134217728 bit			e0
K4Y54084UF-JCB3	Samsung	RAMBUS DRAM		104	BGA	16384	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1200 mA	33554432 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm		3-STATE	32MX8	32M		BOTTOM		R-PBGA-B104				400 MHz		Not Qualified	268435456 bit				.34 Amp			53.6 ns
MD16R1624EG0-CM8	Samsung	RAMBUS DRAM MODULE		232	DIMM	16384	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1390 mA	33554432 words		YES	COMMON	2.5	1.8/2.5,2.5	32	MICROELECTRONIC ASSEMBLY	DIMM232,40	DRAMs	1 mm		3-STATE	32MX32	32M		DUAL	1	R-XDMA-N232		2.63 V				Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH		1.1 Amp			40 ns
KM418RD8AD-SG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	53.3 ns
K4R441869A-NCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM418RD8C-SM80	Samsung	RAMBUS DRAM		62	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	12.6 mm	Not Qualified	150994944 bit	2.37 V	SELF REFRESH	e0			13.15 mm
K4R441869A-MCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX18	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669B-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669A-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm	YES	3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669E-RCS8	Samsung	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50	DRAMs	1.27 mm		3-STATE	8MX16	8M	TIN LEAD	BOTTOM	1	R-PBGA-B54		2.63 V	1.25 mm	800 MHz	11.8 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.