16384 DRAM 192

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53B256M32D1DS-062AAT:C	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.8 mm	105 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		.0033 Amp	16,32	14.5 mm
IS43LQ32256A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM		200	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	16,32	NO	COMMON			32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25			.65 mm	85 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	1.1 mm	1600 MHz	10 mm		8589934592 bit	1.7 V	TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V			16,32	14.5 mm
TM4SK64KPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		.008 Amp			7.5 ns
TM8SK64JPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144		16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH
TM16SR64JPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1288 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		83 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.016 Amp			8 ns
TM8SR64JPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1560 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	31.75 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.016 Amp			7.5 ns
TM8SR72JPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	8388608 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		83 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH		.018 Amp			8 ns
TM4SK64KPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		83 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		.008 Amp			8 ns
TM8SK64KPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	728 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		83 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.016 Amp			8 ns
TM16SR64JPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1568 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.016 Amp			7.5 ns
TM8SK64KPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	868 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.016 Amp			7.5 ns
TM16SR72JPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1764 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.018 Amp			7.5 ns
TM8SR64JPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V	31.75 mm	83 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.016 Amp			8 ns
TM16SR72JPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1449 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel		3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		83 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.018 Amp			8 ns
TM8SR72JPU-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1755 mA	8388608 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel		3-STATE	8MX72	8M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH		.018 Amp			7.5 ns
HYB25R144180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	40 ns
HYB25R144180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	53 ns
HYB25M144180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25M128160C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25R128160C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	40 ns
HYB25R128160C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25M144180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	40 ns
HYB25M128160C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	40 ns
HYB25R128160C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	53 ns
HYB25M144180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	53 ns
HYB25R144180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25R144180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25M128160C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	53 ns
HYB25M144180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25M128160C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
HYB25R128160C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			11 mm	45 ns
TC59RM718MB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59YM816BKG40B	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59RM716MB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM716MB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM718RB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59YM816BKG32A	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59YM816BKG32C	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH
TC59RM716MB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM718RB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM718MB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM716RB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM716GB-8	Toshiba	RAMBUS DRAM		54	LBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE	BGA54,7X9,50		DRAMs	1.27 mm			3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B54	2.63 V	1.3 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM716RB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM718MB-7	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	711 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM716RB-8	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm		YES	3-STATE	8MX16	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	800 MHz	11.66 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59RM718RB-6	Toshiba	RAMBUS DRAM		62	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA62,12X9,40/32		DRAMs	.8 mm			3-STATE	8MX18	8M		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1.2 mm	600 MHz	11.66 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12.92 mm
TC59YM816BKG24A	Toshiba	RAMBUS DRAM		107	TFBGA	16384	SQUARE	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	BGA104,11X16,50/32		DRAMs	.8 mm			3-STATE	16MX16	16M			DUAL	1	R-XDMA-N240	1.86 V	1.2 mm			Not Qualified	268435456 bit	1.74 V	AUTO/SELF REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.