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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SMJ44C256-80HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	80 ns
TMS45160-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		26.035 mm	100 ns
SMJ44C256-80FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	NO LEAD	SYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	80 ns
SMJ4C1024-10SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						26.67 mm	100 ns
TMS44C250-12SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm		2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT							120 ns
SMJ4C1024-12HK	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		1	FLATPACK				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.015 mm	120 ns
SMJ4C1024-10HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	100 ns
TMS44C256-12DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		17.145 mm	120 ns
SMJ44C256-15HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		50 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL		R-XDSO-N20					Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp			150 ns
SMJ4C1024-80HK	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		1	FLATPACK				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.015 mm	80 ns
SMJ44C256-10HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	100 ns
SMJ44C256-80SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	SYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		26.67 mm	80 ns
TMS44C251-10SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words				5	5	4	IN-LINE	ZIP28,.1		Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm		2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.01 Amp			100 ns
5962-9061703MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-GDIP-T20	5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp			100 ns
TMS4C1025-15DJ	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND			1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDSO-J20					Not Qualified	1048576 bit									150 ns
SMJ4C1024-12HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	SYNCHRONOUS	60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	120 ns
SMJ44C256-80HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	J BEND	SYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	80 ns
SMJ4C1024-80HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	SYNCHRONOUS	75 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	80 ns
TMS44C256-15DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL		R-PDSO-J20					Not Qualified	1048576 bit						.003 Amp			150 ns
TMS4C1027-10NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						22.48 mm	100 ns
TMS4C1024-70DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		80 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDSO-J20					Not Qualified	1048576 bit						.002 Amp			70 ns
TM024GAD8-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.25 V				Not Qualified	8388608 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
TMS4C1027-12DN	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	1.83 mm		7.47 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		16.51 mm	120 ns
TM256KBK36C-10	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	650 mA	262144 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.02 Amp			100 ns
TMS45169P-70DGE	Texas Instruments	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		160 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL		R-PDSO-G40					Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.00035 Amp			70 ns
TMS44C256-15NL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDIP-T20	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						24.325 mm	150 ns
TMS45160L-70DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	160 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		18.41 mm	70 ns
TMS4C1025-12NL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						22.48 mm	120 ns
TMS45165S-80DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	140 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE WRITE		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		18.41 mm	80 ns
TM256BBK32-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	600 mA	262144 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.5778 mm			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			80 ns
5962-9061701MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	J BEND	ASYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-XDSO-J20	5.5 V	2.54 mm		8.385 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		17.145 mm	150 ns
LC382161AT-15	Onsemi	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES				GULL WING		120 mA	131072 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-G50			66 MHz		Not Qualified	2097152 bit						.002 Amp	1,2,4,8
LC322270T-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		115 mA	131072 words			COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-G40					Not Qualified	2097152 bit						.001 Amp			80 ns
LC322270J-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		125 mA	131072 words			COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-J40					Not Qualified	2097152 bit						.001 Amp			70 ns
LC382161AT-10	Onsemi	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES				GULL WING		160 mA	131072 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-G50			100 MHz		Not Qualified	2097152 bit						.002 Amp	1,2,4,8
LC382161T-17	Onsemi	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES				GULL WING		90 mA	131072 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-G50			29 MHz		Not Qualified	2097152 bit						.002 Amp	2,4,8		17 ns
LC382161AT-12	Onsemi	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES				GULL WING		140 mA	131072 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-G50			83 MHz		Not Qualified	2097152 bit						.002 Amp	1,2,4,8
LC322270T-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		125 mA	131072 words			COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	0 Cel		DUAL		R-PDSO-G40					Not Qualified	2097152 bit						.001 Amp			70 ns
HYB514256AL-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20					Not Qualified	1048576 bit			e0			.0003 Amp			70 ns
HYB511000AJ-10	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND			1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0						100 ns
HYB511000BZ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0			.001 Amp			70 ns
HYB314171BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	105 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm		10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		26.16 mm	60 ns
HYB514256AZ70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		80 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0			.001 Amp			70 ns
HYB511000A-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0						80 ns
HYM91000L-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	810 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.009 Amp			60 ns
HYB511000AZ60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0						60 ns
HYB314171BJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	125 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.68 mm		10.3 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		26.16 mm	50 ns
HYB514256BZ-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		70 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0			.001 Amp			80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.