512 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS4C1024-60DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		95 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDSO-J20				Not Qualified	1048576 bit						.002 Amp		60 ns
TMS4C1024-10N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	100 ns
TM256KBK36C-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	950 mA	262144 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel		SINGLE	1	R-XSMA-N72	5.25 V	25.4 mm		Not Qualified	9437184 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.02 Amp		60 ns
SMJ44C251B-10JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-CDIP-T28	5.5 V	3.56 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						100 ns
SMJ4C1024-15HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm	9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.015 mm	150 ns
SMJ44C251B-10HJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.52 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.542 mm	100 ns
SMJ44C251B-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ28,.4		Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.52 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	100 ns
TMS45160S-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	140 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	26.035 mm	80 ns
SMJ4C1024-12JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	22.606 mm	120 ns
TMS4C1024-80DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	1.83 mm	7.47 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	16.51 mm	80 ns
TMS45160S-80DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	140 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	80 ns
SMJ44C251-1HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.25 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.75 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.542 mm	100 ns
TMX4C1027-15DJ	Texas Instruments	STATIC COLUMN DRAM		20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE				1.27 mm		3-STATE	1MX1	1M			DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V						17.145 mm	150 ns
TMS44C256-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		95 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.002 Amp		60 ns
SMJ4C1024-15JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE				2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.606 mm	150 ns
TMS4C1024-15NL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.48 mm	150 ns
TM256BBK32-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	640 mA	262144 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.5778 mm		Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		70 ns
TMS45160S-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	26.035 mm	100 ns
TMS44C251-15DJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44		Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28	5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	18.415 mm	150 ns
TMS45169-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		180 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL		R-PDSO-J40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		60 ns
TMX44C259-10N	Texas Instruments	NIBBLE MODE DRAM		20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE				2.54 mm		3-STATE	256KX4	256K			DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						24.325 mm	100 ns
TMS44C260-10DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	65 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	100 ns
SMJ44C251A-12HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44		Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	120 ns
TMS45160-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	180 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.035 mm	60 ns
SMJ44C250-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44		Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	100 ns
TMS48C138-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	80 ns
SMJ4C1024-10HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	100 ns
TM024GAD8-15L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	440 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.024 Amp		150 ns
TMS44C256J-10	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL		R-XDIP-T20				Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp		100 ns
TMS45169P-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		190 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL		R-PDSO-J40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.00035 Amp		50 ns
SMJ4C1024-80HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm	8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	80 ns
SMJ4C1024-15HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	150 ns
SMJ44C251B-12SVM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1		Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	36.83 mm	120 ns
TMS45169P-50DGE	Texas Instruments	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		190 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL		R-PDSO-G40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.00035 Amp		50 ns
TMS55166-60DGE	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	2	R-PDSO-G64	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					23.495 mm	60 ns
SMJ44C256-12HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm	9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.015 mm	120 ns
TMS4C1024-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	60 ns
SMJ4C1024-12FQ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ55161-70HKCM	Texas Instruments	VIDEO DRAM	MILITARY	64	GDFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	225 mA	262144 words			5	5	16	FLATPACK, GUARD RING	TPAK64,1.6SQ,20		Other Memory ICs	.5 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel		DUAL	2	R-CDFP-F64	5.5 V	3.81 mm	10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	18.985 mm	70 ns
TMS4C1024-15DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		55 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDSO-J20				Not Qualified	1048576 bit						.003 Amp		150 ns
TMS48C121-10DZ	Texas Instruments	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	131072 words			5	5	8	SMALL OUTLINE	SOJ40,.44		Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	2	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	26.035 mm	100 ns
TMS44C257-15DJL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	150 ns
TMS4C1027-12DJL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ44C251A-2JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words			5	5	4	IN-LINE	DIP28,.4		Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.25 V	4.445 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	36.83 mm	120 ns
TMS45165L-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE WRITE		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	26.035 mm	80 ns
SMJ4C1024-80HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	80 ns
TMS45165-10DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.41 mm	100 ns
SMJ4C1024-80SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE				2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					26.67 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.