512 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TC514280BJL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4718592 bit			e0	.0003 Amp		100 ns
TC511002AP-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel			1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		22 mm	70 ns
TC524265SF-70	Toshiba	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, SHRINK PITCH			.8 mm	70 Cel		3-STATE	256KX16	256K	TIN LEAD	DUAL	2	R-PDSO-G64	5.5 V	3 mm	11.2 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26 mm	70 ns
TC514266AZ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel			256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	80 ns
THM81020L-85	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			560 mA	1048576 words		COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm		Not Qualified	8388608 bit			e0	.008 Amp		85 ns
TC514256BFTL-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			256KX4	256K	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		14.4 mm	60 ns
THM91001S-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		450 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE		R-PSMA-N30		20.32 mm		Not Qualified	9437184 bit				.009 Amp		120 ns
TC511002BZ-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			1.27 mm	70 Cel			1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	60 ns
THM91001S-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		540 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE		R-PSMA-N30		20.32 mm		Not Qualified	9437184 bit				.009 Amp		100 ns
TC511000BJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	70 Cel			1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	60 ns
TC511000APL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel			1MX1	1M	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		22 mm	100 ns
TC514256Z-85	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		85 ns
TC514265DJS-60	Toshiba	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.0002 Amp		60 ns
TC514280BJLL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4718592 bit			e0			100 ns
TC511000BFT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	TSOP1	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel			1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		14.4 mm	60 ns
TC511001AJ-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	70 Cel			1MX1	1M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.55 mm	7.7 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		17.15 mm	80 ns
TMM411000C-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0			100 ns
TC514280BJL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4718592 bit			e0	.0003 Amp		70 ns
TC524259BZ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel		3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	e0		36.2 mm	80 ns
TC514256AZL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel			256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		25.8 mm	80 ns
TC528267TR-70	Toshiba	VIDEO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST EDO AND PIPELINED PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		3-STATE	256KX8	256K		DUAL	2	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH			18.41 mm	70 ns
TC528128BJ-10	Toshiba	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	128KX8	128K	TIN LEAD	DUAL	2	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0		26.04 mm	100 ns
TC511001C-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0			100 ns
TC511001C-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	1048576 bit			e0			120 ns
UPD424263LG5-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.0001 Amp		70 ns
UPD424256GXM-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
UPD42S4260ALG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.00008 Amp		60 ns
UPD424210ALE-60	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.001 Amp		60 ns
UPD42S4260AG5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.0003 Amp		70 ns
UPD411001C-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			100 ns
UPD424260AG5-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.0003 Amp		60 ns
UPD42S4260LLE-12L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		50 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.00012 Amp		120 ns
MC-42512A36B-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		780 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K		SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	18874368 bit				.024 Amp		100 ns
UPD424256GXM-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	1048576 bit			e0	.001 Amp		70 ns
UPD421001V-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0	.001 Amp		70 ns
UPD411000C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0			100 ns
UPD42S4263AG5M-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.0003 Amp		80 ns
UPD42S4260ALE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.0003 Amp		80 ns
UPD424270LE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		145 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.001 Amp		80 ns
UPD421000V-80L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0	.0002 Amp		80 ns
UPD424210LE-70	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		150 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
UPD424256GX-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
UPD424260G5-60-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.001 Amp		60 ns
UPD424263AV-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		120 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40				Not Qualified	4194304 bit			e0	.0003 Amp		80 ns
UPD42S4263LG5M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.0001 Amp		80 ns
UPD424260LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		140 mA	262144 words	NO	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T40				Not Qualified	4194304 bit			e0	.0005 Amp		60 ns
UPD424256C-60L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		90 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0	.0002 Amp		60 ns
MC-424256A36F-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		960 mA	262144 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K		SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	9437184 bit				.008 Amp		80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.