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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD424256GXM-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp	100 ns
UPD421000LA-12	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	40 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.001 Amp	120 ns
UPD424260LLE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	140 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	4194304 bit	e0	.0005 Amp	60 ns
UPD424280ALE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	160 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	4718592 bit	e0	.0003 Amp	60 ns
MC-421000A8B-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	560 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		SINGLE	R-PSMA-N30	19.9898 mm	Not Qualified	8388608 bit		.008 Amp	80 ns
UPD424280LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	140 mA	262144 words	NO	COMMON	3.3	3.3	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40		Not Qualified	4718592 bit	e0	.0001 Amp	70 ns
UPD42601C-60L	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	12 mA	1048576 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0	.0005 Amp	600 ns
UPD421000GXM-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD42S4210ALE-60	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	4194304 bit	e0	.00008 Amp	60 ns
UPD421000C-60L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0	.0002 Amp	60 ns
UPD42S4260V-70L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	160 mA	262144 words	YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40		Not Qualified	4194304 bit	e0	.0002 Amp	70 ns
UPD42S4280G5-70-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	190 mA	262144 words	YES	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4718592 bit	e0	.00015 Amp	70 ns
MC-424512A36B-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	744 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel			512KX36	512K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	18874368 bit		.016 Amp	100 ns
UPD424260G5-70-9KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	160 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP44,.4,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	e0	.001 Amp	70 ns
UPD424256GXM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp	60 ns
MC-42512A36B-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	910 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	18874368 bit		.024 Amp	80 ns
UPD42S4263LLE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	130 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	4194304 bit	e0	.0001 Amp	60 ns
UPD421000GXM-60L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.0002 Amp	60 ns
UPD42S4260LG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.0001 Amp	60 ns
UPD424256LA-60L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.0002 Amp	60 ns
UPD424260LG5-A10-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.0005 Amp	100 ns
UPD424263LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.0001 Amp	70 ns
UPD421000LA-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD421805G5-35	Renesas Electronics	EDO DRAM	COMMERCIAL	28	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	131072 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD42S4260LE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	145 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	4194304 bit	e0	.00015 Amp	80 ns
MC-42256AA40F-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	800 mA	262144 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX40	256K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	10485760 bit		.01 Amp	70 ns
UPD424280AG5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4718592 bit	e0	.0003 Amp	70 ns
UPD42S4210G5-70	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.00015 Amp	70 ns
UPD424210G5-60-7JF-G	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	160 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.001 Amp	60 ns
UPD424266C-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD424266C-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424256C-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	80 ns
MC-42256AA40B-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	900 mA	262144 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX40	256K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	10485760 bit		.01 Amp	60 ns
UPD424260ALG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.0005 Amp	60 ns
MC-42256A32F-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	640 mA	262144 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX32	256K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	8388608 bit		.008 Amp	70 ns
UPD424260ALG5-A60-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.0005 Amp	60 ns
MC-424256A36FH-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	720 mA	262144 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K		SINGLE	R-PSMA-N72	31.75 mm	Not Qualified	9437184 bit		.012 Amp	100 ns
UPD424263LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	120 mA	262144 words	NO	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40		Not Qualified	4194304 bit	e0	.0001 Amp	70 ns
UPD42S4260V-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	160 mA	262144 words	YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40		Not Qualified	4194304 bit	e0	.0002 Amp	70 ns
MC-424256A36B-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	808 mA	262144 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K		SINGLE	R-PSMA-N72	25.4 mm	Not Qualified	9437184 bit		.008 Amp	85 ns
UPD424266V-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	60 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	100 ns
MC-421000A8A-12	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		400 mA	1048576 words		COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE		21.6154 mm	Not Qualified	8388608 bit	e0	.008 Amp	120 ns
UPD42S4260AG5M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.0003 Amp	60 ns
UPD421000GXM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD42S4280LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	140 mA	262144 words	YES	COMMON	3.3	3.3	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40		Not Qualified	4718592 bit	e0	.0001 Amp	70 ns
UPD42S4260ALG5-A70-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	4194304 bit	e0	.00008 Amp	70 ns
UPD424256C-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-421000B9B-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	540 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30		Not Qualified	9437184 bit		.009 Amp	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.