512 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
UPD42S4260G5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	145 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.00015 Amp		80 ns
UPD424280G5-70-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	190 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4718592 bit	e0	.001 Amp		70 ns
5962-01-372-7423	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	60 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDIP-T20			Not Qualified	1048576 bit		.001 Amp		100 ns
UPD4502161G5-A12-7JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES		GULL WING	120 mA	131072 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	128KX16	128K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50		83 MHz	Not Qualified	2097152 bit	e0	.002 Amp	1,2,4,8	9 ns
MC-421000A9B-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	720 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	19.9898 mm		Not Qualified	9437184 bit		.003 Amp		70 ns
UPD42S4260LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	160 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.00015 Amp		70 ns
MC-42256AA40F-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	900 mA	262144 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX40	256K		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	10485760 bit		.01 Amp		60 ns
UPD42S4260ALLE-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.00008 Amp		70 ns
MC-421000B9B-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	450 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30			Not Qualified	9437184 bit		.009 Amp		120 ns
UPD421000V-60L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	1048576 bit	e0	.0002 Amp		60 ns
UPD424260G5-80-9JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	145 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP44,.4,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	4194304 bit	e0	.001 Amp		80 ns
UPD424256GX-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	1048576 bit	e0	.001 Amp		60 ns
UPD42S4210LE-70	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	150 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.00015 Amp		70 ns
UPD421000GXM-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	1048576 bit	e0	.001 Amp		80 ns
UPD4502161G5-A10-7JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES		GULL WING	140 mA	131072 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	128KX16	128K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50		100 MHz	Not Qualified	2097152 bit	e0	.002 Amp	1,2,4,8	8 ns
UPD421000GXM-80L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	1048576 bit	e0	.0002 Amp		80 ns
UPD424263LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	130 mA	262144 words		NO	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0001 Amp		60 ns
MC-42256A32B-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	640 mA	262144 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX32	256K		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	8388608 bit		.008 Amp		70 ns
UPD42S4263LG5M-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	130 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0001 Amp		60 ns
UPD42601LA-60L	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	12 mA	1048576 words			SEPARATE			1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	1048576 bit	e0	.0005 Amp		600 ns
UPD42601LA-60	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	12 mA	1048576 words			SEPARATE			1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	1048576 bit	e0	.0005 Amp		600 ns
UPD42S4260LG5M-12	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	50 mA	262144 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.00025 Amp		120 ns
UPD42S4263AV-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	130 mA	262144 words		YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0003 Amp		70 ns
UPD42S4260LV-12L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	262144 words		YES	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.00012 Amp		120 ns
UPD424263LLE-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.0001 Amp		80 ns
UPD424256V-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words			COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	1048576 bit	e0	.001 Amp		70 ns
UPD421000V-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	1048576 bit	e0	.001 Amp		70 ns
MC-42256A32B-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	720 mA	262144 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX32	256K		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	8388608 bit		.008 Amp		60 ns
UPD42S4280ALE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	160 mA	262144 words		YES	COMMON	5	5	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4718592 bit	e0	.0003 Amp		60 ns
5962-01-335-5675	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M		DUAL	R-PDIP-T18			Not Qualified	1048576 bit		.001 Amp		100 ns
MC-421000A9A-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		630 mA	1048576 words			COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		21.6154 mm		Not Qualified	9437184 bit	e0	.003 Amp		80 ns
MC-421000B8B-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	480 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		SINGLE	R-PSMA-N30			Not Qualified	8388608 bit		.008 Amp		100 ns
UPD424280AG5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	262144 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4718592 bit	e0	.0003 Amp		80 ns
UPD424256LA-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	60 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	1048576 bit	e0	.001 Amp		100 ns
UPD42S4260LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	130 mA	262144 words		YES	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0001 Amp		70 ns
UPD424260AG5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0003 Amp		80 ns
MC-421000A9F-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	540 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	19.9898 mm		Not Qualified	9437184 bit		.003 Amp		100 ns
UPD424260LG5M-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0005 Amp		60 ns
UPD42S4280AV-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	160 mA	262144 words		YES	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4718592 bit	e0	.0003 Amp		60 ns
UPD424260LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	120 mA	262144 words		NO	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0005 Amp		70 ns
UPD424260ALLE-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.0005 Amp		70 ns
UPD424260G5-70L-9JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	160 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP44,.4,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	4194304 bit	e0	.0002 Amp		70 ns
UPD414256C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words			COMMON			4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20			Not Qualified	1048576 bit	e0			100 ns
MC-42256AA40B-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	600 mA	262144 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX40	256K		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	10485760 bit		.01 Amp		100 ns
UPD424263LG5-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0001 Amp		80 ns
MC-42256AA40B-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	800 mA	262144 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	256KX40	256K		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	10485760 bit		.01 Amp		70 ns
UPD411001C-15	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18			Not Qualified	1048576 bit	e0			150 ns
UPD424260LG5-A80-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	262144 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0005 Amp		80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.