512 DRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MC-42512A36F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

910 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

18874368 bit

.024 Amp

80 ns

MC-421000A9F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

630 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

R-PSMA-N30

19.9898 mm

Not Qualified

9437184 bit

.003 Amp

80 ns

UPD424210AG5-70

Renesas Electronics

EDO DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD424260G5-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

MC-424512A36FH-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1040 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

18874368 bit

.024 Amp

70 ns

UPD42601C-60

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

12 mA

1048576 words

SEPARATE

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

1048576 bit

e0

.0005 Amp

600 ns

MC-424512A36BH-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

780 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

18874368 bit

.024 Amp

100 ns

UPD421805G5-25-A

Renesas Electronics

EDO DRAM

COMMERCIAL

28

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

131072 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

UPD424260ALE-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

140 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD424256LA-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

UPD42S4260ALLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.00008 Amp

60 ns

UPD424280LG5-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

262144 words

NO

COMMON

3.3

3.3

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.0001 Amp

70 ns

UPD424266LA-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

UPD424280AG5M-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.0003 Amp

60 ns

UPD424270G5-80-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD424260V-80L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

145 mA

262144 words

NO

COMMON

5

5

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD42S4210ALG5-A60

Renesas Electronics

EDO DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.00008 Amp

60 ns

UPD42S4280LLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

262144 words

YES

COMMON

3.3

3.3

18

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4718592 bit

e0

.0001 Amp

80 ns

MC-42256A32F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

560 mA

262144 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

8388608 bit

.008 Amp

80 ns

UPD424263LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

130 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD424280LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

150 mA

262144 words

NO

COMMON

3.3

3.3

18

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4718592 bit

e0

.0001 Amp

60 ns

UPD424263LG5-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD42S4260G5-70-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.00015 Amp

70 ns

UPD421000C-12

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

40 mA

1048576 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

1048576 bit

e0

.001 Amp

120 ns

UPD424270LE-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD424260V-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

160 mA

262144 words

NO

COMMON

5

5

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD424280AV-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

140 mA

262144 words

NO

COMMON

5

5

18

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4718592 bit

e0

.0003 Amp

80 ns

UPD424210LE-60

Renesas Electronics

EDO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD42S4260LE-80L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

145 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.00015 Amp

80 ns

MC-424256A36BH-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

960 mA

262144 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

9437184 bit

.012 Amp

70 ns

UPD424210G5-70

Renesas Electronics

EDO DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD424260ALLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0005 Amp

80 ns

UPD42S4260AG5-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD424270G5-70-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD42S4260G5-80-7KF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

145 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.00015 Amp

80 ns

MC-42256A32BT-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

262144 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

256KX32

256K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

8388608 bit

.008 Amp

60 ns

UPD424256GX-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/24,.63,20

DRAMs

.5 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

MC-424256A36F-85

Renesas Electronics

PAGE MODE DRAM

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

808 mA

262144 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

9437184 bit

.008 Amp

85 ns

UPD424256C-12

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

120 ns

UPD424266V-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

ZIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

262144 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

70 ns

UPD421000LA-60L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.0002 Amp

60 ns

MC-421000A9A-12

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

512

PLASTIC/EPOXY

NO

CMOS

450 mA

1048576 words

COMMON

5

5

9

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

24.0284 mm

Not Qualified

9437184 bit

e0

.009 Amp

120 ns

UPD424260LG5-A70-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

262144 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0005 Amp

70 ns

MC-421000B9A-12

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

30

512

PLASTIC/EPOXY

NO

CMOS

450 mA

1048576 words

COMMON

5

5

9

SIP30,.2

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

Not Qualified

9437184 bit

e0

.009 Amp

120 ns

UPD424266C-10

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

UPD421000LA-10

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

UPD424260LE-80L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

145 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD42S4263ALE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.