OTHER DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4T1G084QE-HCF70	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	9.5 mm	.4 ns
K4S51323LF-EF1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	16777216 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM		R-PBGA-B90				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
M393T2950BG3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5570 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e0			.724 Amp			.6 ns
K4S641633F-BL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm	105 MHz	8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	8 mm	7 ns
K4S64163LF-GR1H	Samsung	SYNCHRONOUS DRAM	OTHER	52	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA52,6X13,30	DRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	R-PBGA-B52		2.7 V	1 mm	105 MHz	6.6 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH				.0005 Amp	1,2,4,8	11 mm	7 ns
M378B5173CB0-MA0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		4 mm		34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
K4M51163LC-BN1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	33554432 words	1,2,4,8,FP		COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit						.001 Amp	1,2,4,8		7 ns
K4S641633H-BC75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	67108864 bit						.0005 Amp	1,2,4,8		5.4 ns
K4S56163PF-RG90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		85 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	268435456 bit			e0			.0003 Amp	1,2,4,8		7 ns
K4S511633C-YL1H	Samsung	SYNCHRONOUS DRAM	OTHER	54	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	335 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		3.6 V	1.3 mm	100 MHz	9.5 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	15.5 mm	7 ns
K4S643233F-DE75	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	135 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm	133 MHz	11 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	13 mm	5.4 ns
M391T6553BZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2430 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.072 Amp			.6 ns
K4S561633F-ZG75	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		185 mA	16777216 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM		S-PBGA-B54				133 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		5.4 ns
K4X51163PE-FEC60	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit						.000015 Amp	2,4,8,16		5.5 ns
K4B2G0846Q-BYMA0	Samsung	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						11 mm
K4M283233H-FG7L	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		120 mA	4194304 words	1,2,4,8,FP		COMMON		3/3.3	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		7.5 ns
M393T2863AZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2930 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH				.585 Amp			.6 ns
K4M641633K-BL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2	3.6 V	1 mm	111 MHz	8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e1			.0005 Amp	1,2,4,8	8 mm	7 ns
M470T2953CZ3-CCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2040 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V		200 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.128 Amp			.6 ns
K4T1G044QE-HCF7	Samsung	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260		4,8	9.5 mm	.4 ns
M391T3253FG0-CD5	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2295 mA	33554432 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		266 MHz		Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	230	.072 Amp			.5 ns
M391T2863AZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2700 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.135 Amp			.45 ns
M393B2K70DM0-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3960 mA	2147483648 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	533 MHz	4 mm	Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				1.836 Amp		133.35 mm	.3 ns
K4S56163LF-XE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			11 mm	7 ns
K4M28323LH-HL60T	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	134217728 bit						.0005 Amp	1,2,4,8		5.4 ns
K4S643232E-TN50	Samsung	SYNCHRONOUS DRAM	OTHER	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	4.5 ns
K4M51163LC-RG750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	33554432 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		2.7 V	1 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		30	240	.001 Amp	1,2,4,8	11.5 mm	5.4 ns
K4S56323LF-FR60	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	268435456 bit			e0			.0005 Amp	1,2,4,8		5.4 ns
K4Y50024UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		710 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
M392T5663FBA-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2695 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	18.45 mm	400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260			133.35 mm	.4 ns
K4S64163LH-BN1H0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						8 mm	7 ns
K4N56163QI-ZC2AT	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	16777216 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3			350 MHz		Not Qualified	268435456 bit			e1		260	.01 Amp	4,8		.45 ns
M470T3354CZ0-LCC	Samsung	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	33554432 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2	1.9 V		200 MHz		Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH							.6 ns
K4J55323QG-BC16	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		860 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM		R-PBGA-B136				600 MHz		Not Qualified	268435456 bit						.08 Amp	4,8		.29 ns
K4Y50044UC-JCC4	Samsung	RAMBUS DRAM	OTHER	104	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1270 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA104,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B104	1					Not Qualified	536870912 bit			e3			.025 Amp			28 ns
K4S641633H-BL1L0	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						8 mm	7 ns
K4M28163PH-RG90	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		85 mA	8388608 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM		S-PBGA-B54	1			111 MHz		Not Qualified	134217728 bit						.00001 Amp	1,2,4,8		7 ns
K4S64163LF-AL1H	Samsung	SYNCHRONOUS DRAM	OTHER	52	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA52,6X13,30	DRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	R-PBGA-B52	3	2.7 V	1 mm	105 MHz	6.6 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	11 mm	7 ns
K4M28163PH-RF900	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	85 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		1.95 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e0			.00001 Amp	1,2,4,8	8 mm	7 ns
M392B5273DH0-YK0	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1983 mA	536870912 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm	800 MHz	4 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.77 Amp		133.35 mm	.225 ns
K4S56323LF-HC75	Samsung	SYNCHRONOUS DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	8388608 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM		R-PBGA-B90				133 MHz		Not Qualified	268435456 bit						.0005 Amp	1,2,4,8		6 ns
K4C89363AF-GIF50	Samsung	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm		10.5 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.6 ns
M393T6553EZA-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2200 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH			260	.512 Amp			.45 ns
K4S511633F-YL1L	Samsung	SYNCHRONOUS DRAM	OTHER	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	33554432 words	1,2,4,8,FP		COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B54				111 MHz		Not Qualified	536870912 bit			e0			.001 Amp	1,2,4,8		7 ns
K4T51163QG-HLD5	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		235 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B84				267 MHz		Not Qualified	536870912 bit						.0045 Amp	4,8		.5 ns
K4T56083QG-ZCCC	Samsung	CACHE DRAM MODULE	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	33554432 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX8	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3			.008 Amp	4,8		.6 ns
K4B2G0846E-BCH90	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	268435456 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH				.012 Amp	8	11 mm	.255 ns
K4S64163LH-RL750	Samsung	SYNCHRONOUS DRAM	OTHER	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54		2.7 V	1 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH		30	240			8 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.